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Epi - Ready DSP SSP Sapphire Substrates Wafers 4inch 6inch 8inch 12inch
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Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer
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2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS
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Polished Transparent Sapphire Tube KY Method Customized Size High Hardness High Wear Resistance
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3C-N Type Silicon Carbide Wafers 2inch 4inch 6inch Or 5*5 10*10mm Size Production Grade Research Grade
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Silicon Carbide Wafers 3C-N Type 5*5 10*10mm Inch Diameter Thickness 350 Μm±25 Μm
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2inch 4inch GaN-based Blue Green LED Grown On Flat Or PPS Sapphire MOCVD DSP SSP
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3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED
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Fused Silica Wafer JGS1 JGS2 BF33 8inch 12inch Thickeness 750um±25um Ra ≤ 0.5nm TTV ≤ 10um
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4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
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N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode
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2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor
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N-GaAs Substrate 6inch 350um Thickness For VCSEL Use OptiWave VCSEL EpiWafer
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6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers
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Sapphire Optical Lenses AL2O3 Customizable High Temperature Resistance DSP 60/40
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Epi - Ready DSP SSP Sapphire Substrates Wafers 4inch 6inch 8inch 12inch

Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS

Polished Transparent Sapphire Tube KY Method Customized Size High Hardness High Wear Resistance

3C-N Type Silicon Carbide Wafers 2inch 4inch 6inch Or 55 1010mm Size Production Grade Research Grade

Silicon Carbide Wafers 3C-N Type 55 1010mm Inch Diameter Thickness 350 Μm±25 Μm

2inch 4inch GaN-based Blue Green LED Grown On Flat Or PPS Sapphire MOCVD DSP SSP

3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED

Fused Silica Wafer JGS1 JGS2 BF33 8inch 12inch Thickeness 750um±25um Ra ≤ 0.5nm TTV ≤ 10um

4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth

N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode

2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor

N-GaAs Substrate 6inch 350um Thickness For VCSEL Use OptiWave VCSEL EpiWafer

6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers

Sapphire Optical Lenses AL2O3 Customizable High Temperature Resistance DSP 60/40

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