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2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | zmkj |
| Model Number: | 2inch customzied sapphire substrates |
Payment & Shipping Terms:
| Minimum Order Quantity: | 25pcs |
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| Price: | by case |
| Packaging Details: | 25pcs wafer case by vacuum package |
| Delivery Time: | 1-5weeks |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 50pcs per month |
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Detail Information |
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| Material: | SAPPHIRE | Size: | 2inch |
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| Thickness: | 0.43mm | Type: | Customzied Orientation |
| Application: | GaN Epitaxial Growth | Growth: | HVPE/Mocvd |
| Surface: | Ssp/ Dsp | Orientation: | A-axis/m-axis/r-axis |
| High Light: | gan wafer,gallium arsenide wafer |
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Product Description
2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready substrate
1. Description
Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR spectrum.It is widely used as optical window in infrared and far infrared military equipments, apparatus and instruments of satellite and space technology, and navigation and spaceflight, such as night infrared scope/sight and night vision camera, etc.The sapphire crystal window is intensively applied in high-tech fields.
Sapphire optical windows are ideal for applications where high pressure, vacuum, or corrosive atmospheres are a consideration. Sapphire, a single crystal form of Al2O3, is resistant to attack by strong acids due to its high dielectric constant. It has high compressive strength and a high melting point. It is also resistant to UV radiation darkening.
sapphire application: sapphire optical lens ,sapphire ball, sapphire bearing ,sapphire led wafer, sapphire watch glass lens.
Single crystal Al2O3 99.999％
Orientation: R-axis 0.5°
Diameter:50.8±0.1mm
Thickness :430±15um or 330±15um
Primary flat:16±1mm
OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)
Frontside Surface Roughness:Ra＜0.2nm
Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra＜0.2nm)
TTV:＜10um BOW:-10~0um WARP:＜10um
Laser Mark Series No. by needs
Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment
Cleanliness :Free visible contamination
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Item |
GaN-FS-A-U/N/SI-S |
GaN-FS-M-U/N/SI-S |
GaN-FS-SP-U/N/SI-S |
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Dimensions |
5.0~10.0× 10.0 mm2 |
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5.0~10.0× 20.0 mm2 |
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Thickness |
350 ±25 μm |
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(11-20) |
(1-100) |
(20-21) |
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(20-2-1) (11-22) (10-11) |
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Orientation |
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TTV(Total Thickness Variation) |
≤ 10 μm |
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BOW |
≤ 10 μm |
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ConductionType Resistivity(300K) |
N-type < 0.1 Ω·cm |
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N-type < 0.05 Ω·cm |
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Semi-Insulating(Fe-doped) > 106 Ω·cm |
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Dislocation Density |
From 1x105 to 3x106 cm-2 |
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Useable Surface Area |
> 90% |
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Polishing |
Front Surface: Ra < 0.2 nm (polished) |
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Back Surface: 1~3 nm (fine ground); option: < 0.2 nm (polished) |
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| Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
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2. QC Standard
3. FAQ:
1. Can you accept OEM?
Yes!.We can manufacture as per your request specification.
2. Can you deliver the goods via our shipping agent?
Yes, we could help you make the delivery using your shipping agent
3. What about your After-sales service?
Yes.We promise that we can change or refund products if there are any quality problem.
If you need more professional help, please contact us. Our technical engineers
would like to give advices according to your requirements