Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
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High Light
gasb substrate
,semiconductor wafer
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MaterialGaAs Single Crystal
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SIZE6INCH
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Thickness650um Or Customzied
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OF TypeNotch Or OF Flat
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Orientation（100）2°off
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SurfaceDSP
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Growth MethodVFG
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Place of OriginCHINA
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Brand Namezmkj
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Model Number6inch S-C-N
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Minimum Order Quantity5pcs
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Priceby case
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Packaging Detailssingle wafer packed in 6"plastic box under N2
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Delivery Time2-4weeks
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Payment TermsT/T, Western Union, MoneyGram
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Supply Ability500pcs per month
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer
Product Description
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
- 1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.
- 2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.
- 3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.
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SPECIFICATION --6 inch SI-Dopant N-Type SSP/DSP LED/LD Gallium Arsenide wafer
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Growth method
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VGF
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Orientation
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<100>
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Diameter
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150.0 +/- 0.3 mm
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Thickness
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650um +/- 25um
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Polish
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Single sided polished (SSP)
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Surface Roughness
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Polished
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TTV/Bow
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<10um /<10um
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Dopant
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Si
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Conductivity type
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N-type
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Resistivity(at RT)
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(1.2~9.9)*10-3 ohm cm
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Etch Pit Density(EPD)
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LED <5000 /cm2 ; LD <500 /cm2
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Mobility
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LED >1000 cm2/v.s ; LD >1500 cm2/v.s
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Carrier Concentration
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LED >(0.4-4)*1018 /cm3 ; LD >(0.4-2.5)*1018 /cm3
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Specifications of semi-conducting GaAs wafer
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Growth Method |
VGF |
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Dopant |
p-type: Zn |
n-type: Si |
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Wafer Shape |
Round (DIA: 2", 3", 4", 6") |
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Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request |
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Dopant |
Si (n-type) |
Zn (p-type) |
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Carrier Concentration (cm-3) |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
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Mobility (cm2/V.S.) |
( 1-2.5) × 103 |
50-120 |
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Etch Pitch Density (cm2) |
100-5000 |
3,000-5,000 |
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Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
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Thickness (µm) |
350±25 |
625±25 |
625±25 |
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TTV [P/P] (µm) |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
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Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
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Specifications of semi-insulating GaAs wafer
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Growth Method |
VGF |
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Dopant |
SI Type: Carbon |
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Wafer Shape |
Round (DIA: 2", 3", 4", 6") |
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Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request |
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Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
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Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
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Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
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Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
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Thickness (µm) |
350±25 |
625±25 |
625±25 |
675±25 |
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TTV [P/P] (µm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
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Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.
Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,
we will take a different packaging process!
Our products are sold all over the world, you can rest assured.