SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

  • High Light

    gasb substrate

    ,

    semiconductor wafer

  • Material
    GaAs Single Crystal
  • SIZE
    6INCH
  • Thickness
    650um Or Customzied
  • OF Type
    Notch Or OF Flat
  • Orientation
    (100)2°off
  • Surface
    DSP
  • Growth Method
    VFG
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    6inch S-C-N
  • Minimum Order Quantity
    5pcs
  • Price
    by case
  • Packaging Details
    single wafer packed in 6"plastic box under N2
  • Delivery Time
    2-4weeks
  • Payment Terms
    T/T, Western Union, MoneyGram
  • Supply Ability
    500pcs per month

Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT

2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer 

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

  • 1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.
  • 2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.
  • 3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.
Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT 0
PRODUCT DESCRIPTION
SPECIFICATION --6 inch SI-Dopant N-Type SSP/DSP LED/LD Gallium Arsenide wafer
Growth method
VGF
Orientation
<100>
Diameter
150.0 +/- 0.3 mm
Thickness
650um +/- 25um
Polish
Single sided polished (SSP)
Surface Roughness
Polished
TTV/Bow
<10um /<10um
Dopant
Si
Conductivity type
N-type
Resistivity(at RT)
(1.2~9.9)*10-3 ohm cm
Etch Pit Density(EPD)
LED <5000 /cm2 ; LD <500 /cm2
Mobility
LED >1000 cm2/v.s ; LD >1500 cm2/v.s
Carrier Concentration
LED >(0.4-4)*1018 /cm3 ; LD >(0.4-2.5)*1018 /cm3

Specifications of semi-conducting GaAs wafer

     

 Growth Method

VGF

Dopant

p-type: Zn

n-type: Si

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Dopant

Si (n-type)

Zn (p-type)

Carrier Concentration (cm-3)

( 0.8-4) × 1018

( 0.5-5) × 1019

Mobility (cm2/V.S.)

( 1-2.5) × 103

50-120

Etch Pitch Density (cm2)

100-5000

3,000-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

Thickness (µm)

350±25

625±25

625±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

OF (mm)

17±1

22±1

32.5±1

OF / IF (mm)

7±1

12±1

18±1

Polish*

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

Specifications of semi-insulating GaAs wafer

Growth Method

VGF

Dopant

SI Type: Carbon

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Resistivity (Ω.cm)

≥ 1 × 107

≥ 1 × 108

Mobility (cm2/V.S)

≥ 5,000

≥ 4,000

Etch Pitch Density (cm2)

1,500-5,000

1,500-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

150±0.3

Thickness (µm)

350±25

625±25

625±25

675±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

≤ 15

OF (mm)

17±1

22±1

32.5±1

NOTCH

OF / IF (mm)

7±1

12±1

18±1

N/A

Polish*

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

E/E,

P/E,

P/P

Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT 1

 

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.

 

Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,

we will take a different packaging process!