100mm Sapphire Substrate 4 Inch Al2O3 0.5mm C - Axis Thickness Customized
Product Details:
Place of Origin: | china |
Brand Name: | zmkj |
Model Number: | 4INCH*0.5mmt |
Payment & Shipping Terms:
Minimum Order Quantity: | 25pcs |
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Price: | by case |
Packaging Details: | in 25pcs cassette wafer box under 100grade cleaning room |
Delivery Time: | 3-5weeks |
Payment Terms: | T/T, Western Union, MoneyGram |
Supply Ability: | 1000pcs per month |
Detail Information |
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Material: | Sapphire Single Crystal | Orientation: | C-axis |
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Surface: | Ssp Or Dsp | Thickness: | 0.5mm Or Customized |
Application: | Led Or Optical Glass | Growth Method: | Ky |
SIZE: | 4INCH DIA100mm | ||
High Light: | sapphire material,silicon substrate |
Product Description
2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness
About synthetic sapphire crystal
Sapphire Properties
Physical | |
Chemical formula | Al2O3 |
Density | 3.97 g/cm3 |
Hardness | 9 Mohs |
Melting point | 2050oC |
Max. use temperature | 1800-1900oC |
Mechanical | |
Tensile strength | 250-400 MPa |
Compressive strength | 2000 MPa |
Poisson's ratio | 0.25-0.30 |
Young's Modulus | 350-400 GPa |
Bending strength | 450-860 MPa |
Rapture Modulus | 350-690 MPa |
Thermal | |
Linear expansion rate (at 293-323 K) | 5.0*10-6K-1(⊥ C) |
6.6*10-6K-1(∥ C) | |
Thermal conductivity (at 298 K) | 30.3 W/(m*K)(⊥ C) |
32.5 W/(m*K)(∥ C) | |
Specific heat (at 298 K) | 0.10 cal*g-1 |
Electrical | |
Resistivity (at 298 K) | 5.0*1018 Ω*cm(⊥ C) |
1.3-2.9*1019 Ω*cm(∥ C) | |
Dielectric constant (at 298 K, in 103-109 Hz interval) | 9.3 (⊥ C) |
11.5 (∥ C) |
Synthetic sapphire is transparent single crystal 99.99% pure Al2O3 that exhibits a unique combination of physical, chemical, electrical and optical properties: high thermal conductivity, high strength and scratch resistance, hardness (9 on the Mohs scale), transparent in wide range of wavelength, chemical inertness.
High crystal perfection, low reactivity, and appropriate unit cell size make sapphire an excellent substrate in the semiconductor industry for blue light-emitting diodes (LED).
Since Nobel Laureate in Physics Shuji Nakamura used the sapphire substrate in 1990s for LED, the demand of sapphire crystal has been growing rapidly.
It drives development of new markets like general lighting, backside lighting in TV-sets, displays, consumer appliances, aerospace and defense, and other applications
The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" diameter are available.
A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.
C-Plane substrates - tend to be used for lll-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.
R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.
Standard wafer 2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP |
Special Cut
A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation |
Customized Size
10*10mm sapphire wafer 20*20mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer |
Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS 4 inch C-plane PSS |
2inch |
DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm /0.5mm/ 1.0mmt SSP C-axis 0.2/0.43mm (DSP&SSP) A-axis/M-axis/R-axis 0.43mm
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3inch |
DSP/ SSP C-axis 0.43mm/0.5mm
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4Inch |
dsp c-axis 0.4mm/ 0.5mm/1.0mm ssp c-axis 0.5mm/0.65mm/1.0mmt
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6inch |
ssp c-axis 1.0mm/1.3mmm
dsp c-axis 0.65mm/ 0.8mm/1.0mmt
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Specification for substrates
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Products Detail
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