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2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers

2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers

  • High Light

    gasb substrate

    ,

    wafer substrate

  • Material
    Indium Arsenide (InAs) Monocrystalline Crystal
  • Growth Method
    VFG
  • SIZE
    2-4INCH
  • Thickness
    300-800um
  • Application
    III-V Direct Bandgap Semiconductor Material
  • Surface
    Ssp/dsp
  • Package
    Single Wafer Box
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    Indium arsenide (InAs)
  • Minimum Order Quantity
    3pcs
  • Price
    by case
  • Packaging Details
    single wafer package in 1000-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    T/T, Western Union
  • Supply Ability
    500pcs

2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers

2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor

 

InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single crystal as the substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in the fields of gas monitoring, low-loss fiber communication, etc. In addition, InAs single crystals have high electron mobility and are ideal materials for making Hall devices.

 

Applications:
InAs single crystal can be used as a substrate material to grow a heterostructure material such as InAsSb/InAsPSb or InAsPSb to fabricate an infrared light-emitting device having a wavelength of 2-12 μm. The InAsPSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate to fabricate a mid-infrared quantum cascade laser. These infrared devices have good application prospects in the field of gas detection and low loss fiber communication. In addition, InAs single crystals have high electron mobility and are an ideal material for making Hall devices.

 

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing

 

2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers 0

 

 

crystal dope type

 

Ion carrier concentration 

cm-3

mobility(cm2/V.s) MPD(cm-2) SIZE
InAs un-dope N 5*1016 ³2*104 <5*104

Φ2″×0.5mm

Φ3″×0.5mm

InAs Sn N (5-20) *1017 >2000 <5*104

Φ2″×0.5mm

Φ3″×0.5mm

InAs Zn P (1-20) *1017 100-300 <5*104

Φ2″×0.5mm

Φ3″×0.5mm

InAs S N (1-10)*1017 >2000 <5*104

Φ2″×0.5mm

Φ3″×0.5mm

size (mm) Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized 
ra Surface roughness(Ra):<=5A
polish single or doubles side polished
package 100 grade cleaning plastic bag in 1000 cleaning room 

 

2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers 1

2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers 22-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers 3

---FAQ –

Q: Are you trading company or manufacturer ?

A: zmkj is a trading company but have a sapphire manufacturer 
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock,it is according to quantity.

Q: Do you provide samples ? is it free or extra ?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below: