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Semiconductor Substrate

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  • China N-type SiC On Si Compound Wafer 6inch 150mm  SiC Type 4H-N Si Type N Or P

    N-type SiC On Si Compound Wafer 6inch 150mm SiC Type 4H-N Si Type N Or P

    Get Best Price
  • China Silicon Wafer N Type P Dopant 2inch 4inch 6inch 8inch Resistivity 0-100 Ohm-cm Single Side Polished

    Silicon Wafer N Type P Dopant 2inch 4inch 6inch 8inch Resistivity 0-100 Ohm-cm Single Side Polished

    Get Best Price
  • China 2inch Silicon Wafers P-type N-type CZ Growth Method BOW ≤30 For LED Lighting

    2inch Silicon Wafers P-type N-type CZ Growth Method BOW ≤30 For LED Lighting

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  • China SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111

    SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111

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  • China SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm

    SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm

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  • China Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Get Best Price
  • China Silicon Wafer CZ orientation111 Resistivity: 1-10 (ohm.cm) single side or double side polish

    Silicon Wafer CZ orientation111 Resistivity: 1-10 (ohm.cm) single side or double side polish

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  • China Silicon Wafer 4 Inch Thickness 500+/-20 Resistivity 1-10 Ohm·cm  Orientation100 Double Side Polish

    Silicon Wafer 4 Inch Thickness 500+/-20 Resistivity 1-10 Ohm·cm Orientation100 Double Side Polish

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  • China 3inch InP Indium Phosphide Substrate N-Type Semiconductor VGF Growth Method 111 100 Orientation

    3inch InP Indium Phosphide Substrate N-Type Semiconductor VGF Growth Method 111 100 Orientation

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  • China Epi Ready 4inch InP Wafers N Type P Type  EPF<1000cm^2 With The Thickness Of 325um±50um

    Epi Ready 4inch InP Wafers N Type P Type EPF<1000cm^2 With The Thickness Of 325um±50um

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  • China Single Crystal Si Wafer Electronic Device Substrate Photolithography Layer 2"3"4"6"8"

    Single Crystal Si Wafer Electronic Device Substrate Photolithography Layer 2"3"4"6"8"

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  • China High Purity Silicon Wafer Conductivity Solar Cells Power Semiconductor Devices

    High Purity Silicon Wafer Conductivity Solar Cells Power Semiconductor Devices

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  • China 4 Inches 6 Inches 8 Inches SOI Wafers Compatible With CMOS Three Layer Structure

    4 Inches 6 Inches 8 Inches SOI Wafers Compatible With CMOS Three Layer Structure

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  • China Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System

    Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System

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  • China 6 Inch 8 Inch SIO2 Silicon Dioxide Wafer Thickness 10um-25um Surface Micromachining

    6 Inch 8 Inch SIO2 Silicon Dioxide Wafer Thickness 10um-25um Surface Micromachining

    Get Best Price
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Sapphire Optical Windows
  • Transparent Sapphire Windows , Sapphire Lens Plano Rectangle 116x116x8.3mmt

  • Fan Shaped Sapphire Material Window Sector Sapphire Glass Optical Grade

  • Rectangle Square Sapphire Wafer Rough Plates For Optical Lens Industrial

Sapphire Substrate
  • 2 3 4 Inch Sapphire Wafers For Optical Thickness 400um Dsp Zero Degree

  • Dsp SSP M - Axis Sapphire Windows , Sapphire Wafer 10-10 10-12 2 Inch

  • 3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm

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