Semi-insulating SiC-On-Si Composite Substrates 4H Exhibit High Resistivity LED

Semi-insulating SiC On Si Composite Substrates 4H Exhibit High Resistivity LED

Product Description of SiC On Si Composite Substrates:

A semi-insulating silicon carbide (SiC) on silicon compound wafer is a specialized type of wafer that combines the properties of silicon carbide and silicon materials. The wafer consists of a layer of semi-insulating silicon carbide on top of a silicon substrate. The term "semi-insulating" indicates that the material has electrical properties that are not purely conductive or purely insulating, but somewhere in between.

Character of SiC On Si Composite Substrates:

1. High Resistivity: Semi-insulating SiC on Si wafers exhibit high resistivity, which means they have low electrical conductivity compared to regular conductive materials.

2. Low Leakage: Due to their semi-insulating nature, these wafers have low leakage currents, making them suitable for applications requiring minimal electrical leakage.

3. High Breakdown Voltage: They typically have a high breakdown voltage, enabling them to withstand high electric fields without breakdown.

Parameter List​ of SiC On Si Composite Substrates:

 Applications of SiC On Si Composite Substrates:

1. High-Frequency Devices: Semi-insulating SiC on Si compound wafers are commonly used in high-frequency devices such as RF transistors, amplifiers, and microwave systems.

2. Power Electronics: They find applications in power electronic devices where high breakdown voltage and low electrical losses are crucial for efficient power conversion.

3. Sensors: These wafers are utilized in sensor technologies where high resistivity and low leakage characteristics are required for accurate sensing and measurement.

4. Optoelectronics: In optoelectronic devices like photodetectors and LEDs, semi-insulating SiC on Si wafers can provide improved performance due to their unique electrical properties.

Applications Picture of SiC On Si Composite Substrates:

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