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Semi-insulating SiC-On-Si Composite Substrates 4H Exhibit High Resistivity LED
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
Payment & Shipping Terms:
| Delivery Time: | 2-4weeks |
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| Payment Terms: | T/T |
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Detail Information |
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| Substrate Material: | Silicon Carbide On Silicon Compound Wafer | Front Surface: | CMP Polished, Ra < 0.5 Nm (single Side Polished, SSP) |
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| Secondary Flat Length: | 18.0 +/- 2.0 Mm | Type: | Semi-type |
| Primary Flat Length: | 32.5 +/- 2.5 Mm | Diameter: | 100 Mm +/- 0.5 Mm |
| Carbon Content: | 0.5 Ppm | Secondary Flat Orientation:: | 90 Deg From Primary Flat |
| Highlight: | LEDs SiC on Si Composite substrates,SiC On Si Composite Substrates |
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Product Description
Semi-insulating SiC On Si Composite Substrates 4H Exhibit High Resistivity LED
Product Description of SiC On Si Composite Substrates:
A semi-insulating silicon carbide (SiC) on silicon compound wafer is a specialized type of wafer that combines the properties of silicon carbide and silicon materials. The wafer consists of a layer of semi-insulating silicon carbide on top of a silicon substrate. The term "semi-insulating" indicates that the material has electrical properties that are not purely conductive or purely insulating, but somewhere in between.
Character of SiC On Si Composite Substrates:
1. High Resistivity: Semi-insulating SiC on Si wafers exhibit high resistivity, which means they have low electrical conductivity compared to regular conductive materials.
2. Low Leakage: Due to their semi-insulating nature, these wafers have low leakage currents, making them suitable for applications requiring minimal electrical leakage.
3. High Breakdown Voltage: They typically have a high breakdown voltage, enabling them to withstand high electric fields without breakdown.
Parameter List of SiC On Si Composite Substrates:
| Item | Specification |
| Diameter | 150 ± 0.2 mm |
| SiC Polytype | 4H |
| SiC Resistivity | ≥1E8 Ω·cm |
| Transfer SiC layer Thickness | ≥0.1 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) |
| Front roughness | Ra ≤ 0.2 nm (5 μm × 5 μm) |
| Si Orientation | <111>/<100>/<110> |
| Si Type | P/N |
| Flat/Notch | Flat/Notch |
| Edge Chip, Scratch, Crack (visual inspection) | None |
| TTV | ≤5 μm |
| Thickness | 500/625/675 ± 25 μm |
Applications of SiC On Si Composite Substrates:
1. High-Frequency Devices: Semi-insulating SiC on Si compound wafers are commonly used in high-frequency devices such as RF transistors, amplifiers, and microwave systems.
2. Power Electronics: They find applications in power electronic devices where high breakdown voltage and low electrical losses are crucial for efficient power conversion.
3. Sensors: These wafers are utilized in sensor technologies where high resistivity and low leakage characteristics are required for accurate sensing and measurement.
4. Optoelectronics: In optoelectronic devices like photodetectors and LEDs, semi-insulating SiC on Si wafers can provide improved performance due to their unique electrical properties.
Applications Picture of SiC On Si Composite Substrates:
FAQ:
A: The use of silicon carbide composite (SiC/SiC) components within fusion reactors has the potential to double the electricity generated from every gigawatt of thermal energy produced compared with advanced steel designs