• SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm
  • SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm
  • SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm
  • SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm
  • SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm
SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm

SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: SOI WAFER

Payment & Shipping Terms:

Minimum Order Quantity: 5
Delivery Time: 2-4 weeks
Payment Terms: T/T
Get Best Price Contact Now

Detail Information

Diameter: 100±0.2mm Type/Dopant: P/B
Orientation: 1-0-0)±0.5° Thickness:: 220±10nm
Resistivity: 8.5-11.5 Ohm-cm Finish: Frontside Polished
SOI BURIED THERMAL OXIDE:: Thickness: 3μm±5% SOI HANDLE LAYER:: Contact Us
High Light:

100mm SOI Wafer

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150mm SOI Wafer

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P type SOI Wafer

Product Description

SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device: 220 Resistivity: 8.5-11.5 ohm-cm

 

Product Detail Page for SOI Wafer (Silicon-On-Insulator)


Product Overview

Introducing our high-performance Silicon-On-Insulator (SOI) wafers, available in 100mm and 150mm diameters. These wafers are engineered for advanced electronic applications, offering superior electrical isolation, reduced parasitic capacitance, and enhanced thermal management. Ideal for high-performance computing, RF communication, MEMS devices, and power electronics, our SOI wafers ensure top-notch performance and reliability.

SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm 0


Specifications

Wafer Dimensions:

  • Diameter Options: 100mm (4 inches) and 150mm (6 inches)

Device Layer:

  • Material: Silicon
  • Thickness: 220 nanometers
  • Dopant Type: P-type
  • Dopant Element: Boron (B)
  • Resistivity: 8.5 to 11.5 ohm-cm

Buried Oxide (BOX) Layer:

  • Material: Silicon Dioxide (SiO2)
  • Thickness: Customizable based on application needs (typically ranges from 200nm to 2μm)

Handle Wafer:

  • Material: Silicon
  • Type: P-type (Boron-doped)
  • Thickness: Standard thickness of 500-700μm, providing robust mechanical support

 

SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm 1


Key Features

  1. Superior Electrical Isolation:

    • The BOX layer ensures excellent electrical isolation between the device layer and the handle wafer, significantly reducing parasitic capacitance and crosstalk.
  2. High-Quality Device Layer:

    • The 220nm thick P-type silicon device layer, doped with Boron, provides optimal electrical properties for a variety of semiconductor applications, ensuring high performance and reliability.
  3. Optimal Resistivity:

    • The device layer resistivity of 8.5-11.5 ohm-cm is ideal for high-speed and low-power applications, balancing conductivity and leakage characteristics.
  4. Enhanced Thermal Management:

    • The SOI structure allows for better heat dissipation, which is critical for maintaining device performance and longevity under high-power or high-frequency conditions.
  5. Mechanical Stability:

    • The thick handle wafer provides robust mechanical support, ensuring wafer stability during the fabrication process and in operational environments.
  6. Customization Options:

    • We offer customization of the BOX layer thickness and other parameters to meet specific application requirements, providing flexibility for diverse semiconductor needs.

Applications

  1. High-Performance Computing:

    • Ideal for CPUs, GPUs, and other high-speed digital logic circuits, offering improved speed and reduced power consumption.
  2. 5G and RF Communication:

    • Perfect for RF components and high-frequency signal processing, benefiting from the excellent isolation and thermal properties.
  3. MEMS Devices:

    • Suitable for manufacturing MEMS devices such as accelerometers, gyroscopes, and other sensors, providing the mechanical stability and precision required.
  4. Power Electronics:

    • Used in power management applications, including power switches and converters, where thermal management and efficiency are crucial.
  5. Analog and Mixed-Signal Circuits:

    • Enhances the performance of analog circuits by reducing noise and crosstalk, making it suitable for audio processing and signal conditioning.

SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm 2


Quality and Reliability

  • Manufacturing Standards:

    • Our SOI wafers are manufactured to the highest industry standards, ensuring consistent quality and performance.
  • Quality Control:

    • Rigorous quality control processes are in place to ensure each wafer meets the specified electrical, mechanical, and thermal properties.
  • Certifications:

    • Complies with international semiconductor manufacturing standards, ensuring compatibility with global fabrication processes.

Ordering Information

  • Availability:

    • 100mm and 150mm SOI wafers are available for immediate shipping. Custom sizes and specifications can be accommodated upon request.
  • Packaging:

    • Wafers are securely packaged in anti-static, cleanroom-compatible containers to prevent contamination and damage during transit.

Upgrade your semiconductor applications with our advanced SOI wafers, engineered for excellence and reliability. Order now and experience the difference in performance and quality.

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