• Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )
  • Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )
  • Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )
  • Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )
  • Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )
Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

Product Details:

Brand Name: ZMSH
Model Number: SOI wafer

Payment & Shipping Terms:

Minimum Order Quantity: 1
Delivery Time: 2-4 weeks
Payment Terms: T/T
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Detail Information

Diameter: 6" Type/Dopant:: N Type/P-doped
Orientation:: <1-0-0>+/-.5 Degree Thickness:: 2.5±0.5µm
Resistivity:: 1-4 Ohm-cm Finish:: Front Side Polished
Buried Thermal Oxide:: 1.0um +/- 0.1 Um Handle Wafers:: <1-0-0>+/-.5 Degree
High Light:

625um SOI wafer

,

P-doped SOI wafer

Product Description

Silicon-on-Insulator SOI wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

Silicon-on-Insulator (SOI) Wafer Abstract

This Silicon-on-Insulator (SOI) wafer is a specialized semiconductor substrate designed for advanced electronic and microelectromechanical systems (MEMS) applications. The wafer is characterized by a multi-layer structure that enhances device performance, reduces parasitic capacitance, and improves thermal isolation, making it an ideal choice for a wide range of high-performance and high-precision applications.

Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) 0Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) 1

Silicon-on-Insulator (SOI) Wafer Product Properties

Wafer Specifications:

  • Wafer Diameter: 6 inches (150 mm)
    • The 6-inch diameter provides a large surface area for device fabrication, improving manufacturing efficiency and reducing production costs.

Device Layer:

  • Thickness: 2.5 micrometers
    • The thin device layer allows for precise control of electronic properties, essential for high-speed and high-performance applications.
  • Doping: P-type (Phosphorus-doped)
    • Phosphorus doping enhances the electrical conductivity of the device layer, making it suitable for various p-type semiconductor devices.

Buried Oxide (BOX) Layer:

  • Thickness: 1.0 micrometer
    • The 1.0 μm thick SiO2 layer provides excellent electrical isolation between the device layer and the handle wafer, reducing parasitic capacitance and improving signal integrity.

Handle Wafer:

  • Thickness: 625 micrometers
    • The thick handle wafer ensures mechanical stability during fabrication and operation, preventing warping or breakage.
  • Type: P-type (Boron-doped)
    • Boron doping improves the mechanical strength and thermal conductivity of the handle wafer, aiding in heat dissipation and enhancing overall device reliability.
Device Layer
Diameter:   6"
Type/Dopant:   N type/P-doped
Orientation:   <1-0-0>+/-.5 degree
Thickness:   2.5±0.5µm
Resistivity:   1-4 ohm-cm
Finish:   Front Side Polished

 

Buried Thermal Oxide:

Thickness:   1.0um +/- 0.1 um

 

Handle Wafers:

Type/Dopant   P Type, B doped
Orientation   <1-0-0>+/-.5 degree
Resistivity:   10-20 ohm-cm
Thickness:   625 +/- 15 um
Finish:   As-received (not polished)

Key Product Properties:

  1. High-Quality Device Layer:

    • Carrier Mobility: High carrier mobility in the phosphorus-doped layer ensures fast electronic response and high-speed operation.
    • Low Defect Density: The high-quality fabrication process ensures minimal defects, leading to better performance and higher yields.
  2. Efficient Electrical Isolation:

    • Low Parasitic Capacitance: The BOX layer effectively isolates the device layer from the substrate, reducing parasitic capacitance and crosstalk, crucial for high-frequency and low-power applications.
    • Signal Integrity: Enhanced electrical isolation helps maintain signal integrity, which is essential for high-precision analog and digital circuits.
  3. Thermal Management:

    • Thermal Conductivity: The boron-doped handle wafer provides good thermal conductivity, aiding in the dissipation of heat generated during device operation, thus preventing overheating and ensuring stable performance.
    • Heat Resistance: The wafer's structure and materials ensure it can withstand high temperatures during processing and operation.
  4. Mechanical Stability:

    • Robustness: The thick handle wafer provides mechanical support, ensuring the wafer remains stable during the fabrication process and under operational stresses.
    • Durability: The mechanical stability of the handle wafer helps prevent damage, reducing the risk of wafer breakage and improving overall device longevity.
  5. Versatility in Applications:

    • High-Performance Computing: Suitable for processors and other high-speed digital logic circuits, thanks to its high carrier mobility and low parasitic capacitance.
    • 5G Communication: Ideal for RF components and high-frequency signal processing, benefiting from the excellent electrical isolation and thermal management properties.
    • MEMS Devices: Perfect for MEMS fabrication, offering the mechanical stability and precision needed for microfabricated structures.
    • Analog and Mixed-Signal Circuits: The low noise and reduced crosstalk make it suitable for high-precision analog circuits.
    • Power Electronics: The robust thermal and mechanical properties make it suitable for power management applications requiring high efficiency and reliability.

Conclusion

This Silicon-on-Insulator (SOI) wafer offers a unique combination of high-quality materials and advanced fabrication techniques, resulting in a substrate that excels in electrical performance, thermal management, and mechanical stability. These properties make it an ideal choice for a wide range of high-performance electronic and MEMS applications, supporting the development of next-generation semiconductor devices.

 

Silicon-on-Insulator (SOI) Wafer Product photos

Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) 2Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) 3

Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) 4

 

Q&A

 

What Are SOI Wafers (Silicon-On-Insulator Wafers)?

Silicon-On-Insulator (SOI) wafers are a type of semiconductor substrate that consist of multiple layers, including a thin silicon device layer, an insulating oxide layer, and a supporting silicon handle wafer. This structure enhances the performance of semiconductor devices by providing better electrical isolation, reducing parasitic capacitance, and improving thermal management.

 

 

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