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FP(Fabry-Perot)) Epiwafer InP substrate dia 2 3 4 6 inch thickness:350-650um InGaAs doping
FP(Fabry-Perot)) Epiwafer InP substrate's abstract
Fabry-Perot (FP) Epiwafer on Indium Phosphide (InP) substrates is a critical component in the fabrication of high-performance optoelectronic devices, particularly laser diodes used in optical communication systems. The InP substrate offers excellent lattice matching with materials such as InGaAsP, enabling the growth of high-quality epitaxial layers. These wafers typically operate in the 1.3 μm to 1.55 μm wavelength range, making them ideal for fiber-optic communication due to the low-loss characteristics of optical fibers in this spectrum. FP lasers, grown on these epiwafers, are widely used in data center interconnects, environmental sensing, and medical diagnostics, providing cost-effective solutions with good performance. The simpler structure of FP lasers compared to more complex designs like DFB (Distributed Feedback) lasers makes them a popular choice for medium-range communication applications. InP-based FP epiwafers are essential in industries that require high-speed, reliable optical components.
FP(Fabry-Perot)) Epiwafer InP substrate's showcase
FP(Fabry-Perot)) Epiwafer InP substrate's data sheet
FP(Fabry-Perot)) Epiwafer InP substrate's structure
Fabry-Perot (FP) Epiwafers on Indium Phosphide (InP) substrates are widely used in various optoelectronic applications due to their efficient light emission properties, particularly in the 1.3 μm to 1.55 μm wavelength range. Below are the main applications:
These applications highlight the versatility of FP Epiwafers on InP substrates, which provide efficient, cost-effective solutions in fields such as telecommunications, medical diagnostics, environmental sensing, and high-speed optical systems.
Efficient Light Emission in Key Wavelengths:
High-Speed Performance:
Cost-Effective Manufacturing:
Versatile Applications:
Simpler Fabrication Process:
Good Wavelength Flexibility:
Low Power Consumption: