• SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111
  • SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111
  • SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111
  • SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111
  • SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111
SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111

SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: SOI WAFER

Payment & Shipping Terms:

Minimum Order Quantity: 1
Delivery Time: 2-4 weeks
Payment Terms: T/T, T/T
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Detail Information

Diameter: 4inch 6inch 8 Inch Dopant: 100 111
Type: SIMOX, BESOI, Simbond, Smart-cut Thickness (um): 0.2-150
The Uniformity: <5% BOX Layer: Thickness (um) 0.4-3
Uniformity: <2.5% Resistivity: 0.001-20000 Ohm-cm
High Light:

100 111 SOI Wafer

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P BOX Layer SOI Wafer

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0.4-3 SOI Wafer

Product Description

SOI Wafer Silicon On Insulator wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111

SOI wafer‘s abstract

SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 0

SOI (Silicon-On-Insulator) wafers are a type of semiconductor material technology used primarily in the microelectronics industry. These wafers are constructed by inserting a thin layer of insulating material, typically silicon dioxide, between a top layer of high-purity silicon and a silicon substrate. This configuration provides several advantages over conventional bulk silicon wafers.

 

SOI wafer‘s photo

SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 1SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 2

SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 3SOI Wafer Silicon On Insulator Wafer Dopant P BOX Layer 0.4-3 Substrate Orientation 100 111 4

SOI wafer‘s properties 

SOI (Silicon-On-Insulator) wafers exhibit a set of distinct properties that make them particularly valuable in various high-performance and specialized microelectronic applications. Here are some of the key properties of SOI wafers:

  1. Electrical Isolation: The buried oxide (BOX) layer in SOI wafers provides excellent electrical isolation between the top silicon layer where the devices are built and the underlying substrate. This isolation helps in reducing parasitic capacitance, thereby improving the performance of high-speed circuits.

  2. Reduced Power Consumption: Due to the reduced parasitic capacitance and leakage currents, devices built on SOI wafers consume less power compared to those built on bulk silicon. This property is especially beneficial for portable and battery-operated devices.

  3. High Performance: The thin top silicon layer can be fully depleted, which leads to better control of the channel and reduced short-channel effects in transistors. This results in transistors that can operate at lower threshold voltages with higher drive currents, enabling faster switching speeds and higher performance.

  4. Thermal Insulation: The insulating layer also provides a degree of thermal insulation between the active layer and the substrate. This can be advantageous in applications where heat generated by the device needs to be confined to the top layer, helping to manage thermal effects more effectively.

  5. Latch-up Immunity: SOI technology provides inherent immunity to latch-up, which is a type of short circuit that can occur in bulk silicon devices. This is due to the absence of a p-n junction between the n-type and p-type regions extending into the substrate, which is a typical cause of latch-up in bulk devices.

  6. Radiation Hardness: The structural configuration of SOI wafers makes devices built on them more resistant to radiation effects such as Total Ionizing Dose (TID) and Single Event Upsets (SEU). This property is critical for space applications and other environments exposed to high levels of radiation.

  7. Scalability: SOI technology is highly scalable, allowing for the fabrication of devices with very small feature sizes. This is crucial for continuing adherence to Moore's Law in the semiconductor industry.

  8. Compatibility with Mainstream Fabrication Processes: While offering unique advantages, SOI wafers can still be processed using many of the same manufacturing techniques as traditional bulk silicon, which facilitates integration into existing production lines.

Diameter 4“ 5” 6“ 8”

 

 

 

Device Layer

Dopant Boron, Phos, Arsenic, Antimony, Undoped
Orientation <100>, <111>
Type SIMOX, BESOI, Simbond, Smart-cut
Resistivity 0.001-20000 Ohm-cm
Thickness (um) 0.2-150
The Uniformity <5%

 

BOX Layer

Thickness (um) 0.4-3
Uniformity <2.5%

 

 

Substrate

Orientation <100>, <111>
Type/Dopant P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
Thickness (um) 300-725
Resistivity 0.001-20000 Ohm-cm
Surface Finished P/P, P/E
Particle <10@.0.3um

SOI (Silicon-On-Insulator) wafers are a type of semiconductor material technology used primarily in the microelectronics industry. These wafers are constructed by inserting a thin layer of insulating material, typically silicon dioxide, between a top layer of high-purity silicon and a silicon substrate. This configuration provides several advantages over conventional bulk silicon wafers.

SOI wafer‘s applications

SOI (Silicon-On-Insulator) wafers are utilized in various high-tech applications due to their unique properties such as reduced parasitic capacitance, improved performance at high frequencies, lower power consumption, and enhanced durability in harsh environments. Here are some of the prominent applications of SOI wafers:

  1. High-Performance Microprocessors: SOI technology is widely used in the production of microprocessors for computers and servers. It helps in reducing power consumption while boosting processing speed, which is critical for high-performance computing applications.

  2. Radio Frequency (RF) Circuits: SOI wafers are particularly advantageous for RF applications due to their excellent isolation properties, which reduce cross-talk and improve performance in RF switching and signal processing. This makes them ideal for use in mobile phones, wireless networks, and other communication devices.

  3. Automotive Electronics: The enhanced durability and operational stability of SOI-based devices under high temperatures and radiation conditions make them suitable for automotive applications, including engine control units, automotive sensors, and power management systems.

  4. Power Devices: SOI technology is beneficial in power devices used for voltage conversion and power management in various electronic products. These devices benefit from SOI's ability to handle high voltages and power densities with better efficiency and reduced heat generation.

  5. MEMS (Micro-Electro-Mechanical Systems): SOI wafers provide a robust platform for developing MEMS devices, such as accelerometers and gyroscopes, which are used in automotive airbags, smartphones, and other consumer electronics. The buried oxide layer in SOI wafers offers excellent mechanical and electrical isolation, which is crucial for MEMS devices.

  6. Photonics and Optoelectronics: The properties of SOI wafers facilitate the integration of optical components such as waveguides, modulators, and detectors with electronic circuits. This integration is vital for developing advanced optoelectronic systems used in data transmission, telecommunications, and sensing applications.

  7. Quantum Computing: SOI wafers are also being explored as substrates for developing quantum bits (qubits) for quantum computing, thanks to their ability to operate at cryogenic temperatures and their compatibility with existing semiconductor processes.

  8. Space and Military Applications: Devices built on SOI wafers are more resistant to radiation effects, making them suitable for space applications and military hardware where exposure to radiation is a concern.

SOI technology continues to evolve, addressing increasingly complex challenges across these applications, driving advancements in electronics and facilitating new innovations in numerous fields.

Q&A

What is SOI silicon wafer?

 

An SOI (Silicon-On-Insulator) silicon wafer is a type of semiconductor material used predominantly in the microelectronics industry. It consists of a thin layer of silicon separated from a thicker silicon substrate by a layer of insulating material, typically silicon dioxide. This structure is achieved through specialized fabrication processes such as the Separation by Implantation of Oxygen (SIMOX) or the Smart Cut technique.

The primary advantage of SOI silicon wafers over traditional bulk silicon wafers is the presence of the insulating layer, which significantly reduces parasitic capacitance, enhances performance by minimizing electrical leakage, and provides better isolation of individual devices on the chip. This leads to improvements in speed, power efficiency, and overall performance of electronic devices. SOI wafers are widely utilized in various applications, including high-performance microprocessors, radio frequency (RF) circuits, power electronics, and MEMS (Micro-Electro-Mechanical Systems), among others. Their attributes make them particularly suited for environments where high speed, low power consumption, and resistance to harsh conditions are essential.

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