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Silicon Carbide Wafer

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

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Superconducting Thin Monocrystalline Substrate

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Superconducting Thin Monocrystalline Substrate

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Brand Name:	ZMSH
Model Number:	3C-N SiC Wafer
MOQ:	10pieces
Packaging Details:	Multi-wafer Cassette or Single Wafer Container
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Certification:

Diameter:

4inch, 99.5 Mm~ 100.0 Mm

Thickness:

350 μm±25 μm

Type:

3C-N SiC Wafer

Roughness:

Polish Ra≤1 Nm

Warp:

≤40 μm

Grade:

MPD Or Dummy Grade

Highlight:

3C-SiC silicon carbide wafers

4 inch silicon carbide wafer

MPD grade SiC wafers

Product Description

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Product Overview

The 4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers offer superior performance characteristics for advanced semiconductor applications.

Introduction of 3C SiC Wafer

Cubic silicon carbide (3C-SiC) exhibits better carrier mobility, thermal conductivity, and mechanical properties compared to 4H-SiC. With lower defect density at the oxide gate interface, 3C-SiC enables manufacturing of high-voltage, reliable, and long-life devices. While typically prepared on Si substrates, bulk 3C-SiC wafers present a cost-effective solution for power devices in the 600V-1200V range.

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade 0

Advantages of 3C-N SiC Wafer

Excellent Electrical Properties: Moderate bandgap (~2.36 eV) enables high breakdown voltage and low leakage current. High electron mobility allows faster switching speeds and lower conduction losses.
Superior Thermal Performance: High thermal conductivity (~3.2 W/cm*K) ensures efficient heat dissipation. Maintains stability at temperatures exceeding 350°C.
Mechanical Robustness: High hardness and chemical stability make it suitable for harsh environments.

Specifications

Parameter	Zero MPD	Standard Production (P Grade)	Dummy Grade (D Grade)
Diameter	99.5 mm~100.0 mm
Thickness (4H-N)	350 μm±15 μm	350 μm±25 μm	-
Thickness (4H-SI)	500 μm±15 μm	500 μm±25 μm	-
Wafer Orientation	Off axis: 4.0° toward <1120> ±0.5° for 4H-N On axis: <0001>±0.5° for 4H-SI
Micropipe Density (4H-N)	≤0.2 cm-2	≤2 cm-2	≤15 cm-2
Micropipe Density (4H-SI)	≤1 cm-2	≤5 cm-2	≤15 cm-2
Resistivity (4H-N)	0.015~0.024 Ω*cm	0.015~0.028 Ω*cm	-
Resistivity (4H-SI)	≥1E10 Ω*cm	≥1E5 Ω*cm	-
Primary Flat Orientation	{10-10} ±5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Edge Exclusion	3 mm
LTV/TTV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm	≤10 μm/≤15 μm/≤25 μm/≤40 μm	-

Material Comparison

4H-SiC: High electron mobility and low conduction resistance make it ideal for power electronic devices.
6H-SiC: Stable structure and excellent luminescence performance suit optoelectronic applications.
3C-SiC: High saturation electron velocity and exceptional thermal conductivity make it perfect for high-frequency and high-power devices.

Frequently Asked Questions

What is a SiC wafer?

A SiC wafer is a single-crystal substrate made from silicon and carbon atoms. As a wide-bandgap semiconductor material, it's used in next-generation power electronics, RF devices, and high-temperature applications. Its superior properties enable smaller, faster, and more energy-efficient electronic devices for electric vehicles, renewable energy systems, and advanced communication technologies.

What is the full form of 3C-SiC?

3C-SiC (Cubic Silicon Carbide) is a cubic crystal form of silicon carbide characterized by high electron mobility, excellent thermal stability, and compatibility with silicon substrates. It's widely used for high-speed, low-power, and cost-effective semiconductor devices.

Which is better, SiC or GaN?

SiC (Silicon Carbide) excels in high-power, high-voltage, high-temperature applications such as electric vehicles and renewable energy systems. GaN (Gallium Nitride) performs better in high-frequency, low-to-medium voltage applications like fast chargers and 5G systems.

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products details

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

3C-SiC silicon carbide wafers

4 inch silicon carbide wafer

MPD grade SiC wafers