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4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics

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Superconducting Thin Monocrystalline Substrate

4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics

Brand Name:	ZMSH
Model Number:	4inch 4H-Semi SiC Wafer
MOQ:	10pieces
Packaging Details:	Customizable Package
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Certification:

RoHS

Diameter:

4inch, 99.5 Mm~ 100.0 Mm

Grade:

Dummy / Research /Production Grade

Type:

SiC High Purity Single Crystal 4H-semi Type

Thickness:

500 μm±25 μm

Warp:

≤40 μm

Roughness:

Ra≤1 Nm

Highlight:

4H-Semi HPSI SiC wafer

4inch silicon carbide wafer

SiC wafer for semiconductor

Product Description

4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics

Silicon Carbide (SiC) wafers are semiconductor substrates made from a compound of silicon and carbon. SiC is a wide bandgap semiconductor, unlike wafer manufacturing with simple silicon, which means it can operate under extreme conditions, including high temperatures, high voltages, and high frequencies. This makes SiC wafers ideal for demanding electronic applications.

Introduction of 4H Semi-Insulating SiC Wafer

4H Semi-Insulating Silicon Carbide (SiC) wafers are high-purity, high-resistivity single-crystal substrates made from the 4H polytype of silicon carbide. They are designed primarily for radio frequency (RF), microwave, 5G communication, and power electronics isolation applications, where excellent electrical insulation, low loss, and high thermal conductivity are essential.

4H Semi-Insulating SiC wafers combine wide bandgap energy, high thermal conductivity, and high resistivity, making them ideal substrates for RF, microwave, and high-frequency communication devices. Their excellent isolation performance and thermal stability enable the production of next-generation high-power and high-frequency systems, supporting industries such as 5G, aerospace, and advanced electronics.

Specification of ZMSH 4inch 4H-Semi Sic Substrates

Parameter	Specification
Grade	Zero MPD
Production	Standard Production
Diameter	99.5 mm~ 100.0 mm
Thickness (4H-Semi)	500 μm±15 μm \| 500 μm±25 μm
Wafer Orientation	Off axis: 4.0° toward <1120> ±0.5° for 4H-N, On axis: <0001>±0.5° for 4H-SI
Micropipe Density (4H-Semi)	≤ 1cm-2 \| ≤ 5 cm-2 \| ≤15 cm-2
Resistivity (4H-Semi)	≥1E10 Ωcm \| ≥1E5 Ωcm
Primary Flat Orientation	{10-10} ±5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Edge Exclusion	3 mm
LTV/TTV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm \| ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Roughness	Polish Ra≤1 nm \| CMP Ra≤0.2 nm \| Ra≤0.5 nm

Key Advantages of Sic Wafers and Substrates

Wider Bandgap: The bandgap of silicon carbide (SiC) is about three times wider than that of silicon, allowing a theoretical operating temperature above 400°C.
High Critical Breakdown Field: SiC's critical breakdown field is about ten times higher than that of silicon, enabling it to withstand higher voltages.
Excellent Thermal Conductivity: SiC's high thermal conductivity allows efficient heat dissipation, reducing device temperature and maintaining stable operation.
High Saturated Electron Drift Velocity: SiC's drift velocity is about twice that of silicon, which helps achieve higher operating frequencies and enables device miniaturization.

Application of 4H Semi-insulating SiC Crystal Substrate and Wafer

Silicon carbide (SiC) crystals have unique physical and electronic properties. SiC-based devices have been used for short-wavelength photoelectric, high-temperature, and anti-radiation applications. High power and high frequency electronic devices made from semi-insulating silicon carbide substrates are superior to those based on Si and GaAs, and 4H semi-insulating SiC wafers are mainly used in Power device and RF device. Moreover, it can be used as carriers for temporary bonding.

ZMSH Related SiC Wafer Recommendation

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

Q & A

Q: What is a SiC wafer?

A: A SiC wafer is a single-crystal substrate made from silicon (Si) and carbon (C) atoms. It is one of the most important wide-bandgap semiconductor materials used in next-generation power electronics, RF devices, and high-temperature applications.

Q: What is the difference between SI wafer and SiC wafer?

A: Silicon wafers are ideal for general-purpose electronics, while SiC wafers excel in high-power, high-voltage, and high-temperature environments, enabling faster, smaller, and more efficient power electronics.

Q: Which is better, SiC or GaN?

A: SiC is best for high-power, high-voltage, high-temperature applications such as electric vehicles and renewable energy. GaN excels in high-frequency, low-to-medium voltage applications like fast chargers and 5G systems.

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products details

4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics

4H-Semi HPSI SiC wafer

4inch silicon carbide wafer

SiC wafer for semiconductor