• 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
  • 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
  • 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
  • 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
  • 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor
8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

Product Details:

Place of Origin: CHINA
Brand Name: ZMKJ
Certification: ROHS
Model Number: 8inch sic wafers 4h-n

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Get Best Price Contact Now

Detail Information

Material: SiC Single Crystal 4H-N Type Grade: Dummy /Production Grade
Thicnkss: 0.35mm 0.5mm Suraface: Double Side Polished
Application: Device Maker Polishing Test Diameter: 200±0.5mm
High Light:

200mm Polishing Silicon Carbide

,

Sic Chip Semiconductor

,

8inch Sic Semiconductor

Product Description

Custom Size Ceramic Substrate / Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 
1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

4 inch n-doped 4H Silicon Carbide SiC Wafer

Physical & Electronic Properties of

 

Wide Energy Bandgap (eV)

 

4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.

 

High Breakdown Electric Field [V/cm (for 1000 V operation)]

 

4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

 

High Thermal Conductivity (W/cm · K @ RT)


4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

 

High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]

Product show:

 

4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

 

 

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About ZMKJ Company

 

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

 

Q: How to pay?

A: T/T 100% deposit before delivery.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

 

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