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4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

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Superconducting Thin Monocrystalline Substrate

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

Brand Name:	ZMSH
Model Number:	4inch SiC Wafer
MOQ:	10pieces
Packaging Details:	Common Package
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Certification:

RoHS

Type:

4H-N

Grade:

Dummy / Research /Production Grade

Thickness:

350 μm±25 μm

Warp:

≤40 μm

Roughness:

Ra≤1 Nm

Diameter:

4inch, 99.5 Mm~ 100.0 Mm

Highlight:

4H-N type SiC wafers

4inch silicon carbide substrate

350um thickness SiC wafers

Product Description

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

What are Silicon Carbide (SiC) Wafers & Substrates?

Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components. Silicon carbide wafers' unique properties make them ideal for applications requiring high-temperature operation, harsh environments, and improved energy efficiency.

Introduction to 4H-N SiC Wafers

4H-N Silicon Carbide (SiC) wafers are n-type single-crystal substrates made from 4H-polytype silicon carbide, a member of the third generation of wide-bandgap semiconductor materials. They combine high voltage tolerance, superior thermal conductivity, and excellent electron mobility, making them the preferred material for next-generation high-power, high-frequency, and high-temperature electronic devices.

Specification of ZMSH 4inch 4H-N Sic Substrates

Grade	Zero MPD
Production	Standard Production
Grade(P Grade)	Dummy Grade (D Grade)
Diameter	99.5 mm~ 100.0 mm
Thickness	4H-N \| 350 μm±15 μm \| 350 μm±25 μm
Wafer Orientation	Off axis : 4.0° toward <1120 > ±0.5° for 4H-N
Micropipe Density	4H-N \| ≤0.2 cm-2 \| ≤2 cm-2 \| ≤15 cm-2
Resistivity	4H-N \| 0.015~0.024 Ωcm \| 0.015~0.028 Ωcm
Primary Flat Orientation	{10-10} ±5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ±5.0°
Edge Exclusion	3 mm
LTV/TTV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm \| ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Roughness	Polish Ra≤1 nm CMP Ra≤0.2 nm \| Ra≤0.5 nm
Edge Cracks By High Intensity Light	None \| Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light	Cumulative area ≤0.05% \| Cumulative area ≤0.1%
Polytype Areas By High Intensity Light	None \| Cumulative area≤3%
Visual Carbon Inclusions	Cumulative area ≤0.05% \| Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light	None \| Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light	None permitted ≥0.2 mm width and depth \| 5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity	None
Threading Screw Dislocation	≤500 cm-2 \| N/A
Package	Multi-wafer Cassette Or Single Wafer Container

Key Advantages of Sic Wafers and Substrates

Wide Bandgap: Enables high-voltage operation (>1200 V) with low power loss.
High Thermal Conductivity: Excellent heat dissipation for high-power devices.
High Breakdown Field Strength: Supports compact device design with higher performance.
High Electron Mobility: Allows fast switching speeds and low on-resistance.
Radiation Resistance: Ideal for aerospace and defense electronics.
Thermal and Chemical Stability: Performs reliably under extreme temperature and environment.

Applications of 4H-N Type Sic Wafers

4H-N SiC wafers are used in high-performance electronic applications due to their excellent thermal, electrical, and mechanical properties, especially in high-voltage, high-temperature, and high-frequency environments. Key applications include power devices (like MOSFETs and diodes), electric vehicle components, renewable energy systems (such as solar inverters), and RF devices for communication and radar systems. They are also used in aerospace, high-temperature sensors, and some optoelectronic devices.

Q &A

Q: What is the difference between SI wafer and SiC wafer?

A: Silicon wafers are ideal for general-purpose electronics -- affordable and reliable for low-to-medium power devices. SiC wafers, as wide-bandgap semiconductors, excel in high-power, high-voltage, and high-temperature environments, enabling faster, smaller, and more efficient power electronics.

Q: Which is better, SiC or GaN?

A: SiC (Silicon Carbide) is best for high-power, high-voltage, high-temperature applications such as electric vehicles, rail transit, and renewable energy. GaN (Gallium Nitride) excels in high-frequency, low-to-medium voltage applications like fast chargers, RF amplifiers, and 5G systems.

Q: What is a SiC wafer?

A: A SiC wafer -- short for Silicon Carbide wafer -- is a single-crystal substrate made from silicon (Si) and carbon (C) atoms. It is one of the most important wide-bandgap semiconductor materials used in next-generation power electronics, RF devices, and high-temperature applications. A SiC wafer is a high-performance semiconductor substrate known for its wide bandgap, superior heat conductivity, and high voltage endurance. It enables smaller, faster, and more energy-efficient electronic devices -- powering the future of electric vehicles, renewable energy systems, and advanced communication technologies.

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products details

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Gallium Nitride Wafer

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

4H-N type SiC wafers

4inch silicon carbide substrate

350um thickness SiC wafers