Solid SiC Vacuum Chuck – Ultra-Flat Carrier Plate for Thin Wafer Processing

Introduction​​ Of SiC Carrier Plate
 

The ultra-flat ceramic wafer vacuum chuck is made with high-purity silicon carbide (SiC) coating, designed for advanced wafer handling processes. Optimized for use in MOCVD and compound semiconductor growth equipment, it offers excellent heat and corrosion resistance, ensuring exceptional stability in extreme processing environments. This contributes to improved yield management and reliability in semiconductor wafer fabrication.

Its low-surface-contact configuration helps minimize backside particle contamination, making it ideal for highly sensitive wafer applications where cleanliness and precision are critical.

This solution combines high performance with cost-efficiency, supporting demanding manufacturing environments with reliable and long-lasting performance.

Working Principle Of SiC Carrier Plate

In high-temperature processes, the SiC carrier plate serves as a support to carry wafers or thin-film materials. Its high thermal conductivity ensures uniform heat distribution, improving process stability and uniformity. Additionally, due to its hardness and chemical inertness, the plate maintains structural integrity even in corrosive environments, ensuring product purity and equipment safety.

Parameters of Wafer Vacuum Chuck

Features of Wafer Vacuum Chuck

● Ultra-flat capabilities

● Mirror polish

● Exceptional light weight

● High stiffness

● Low thermal expansion

● Φ 300 mm diameter and beyond

● Extreme wear resistance

Applications of SiC Porous Vacuum Chuck

In the semiconductor and optoelectronic industries, ultra-thin wafers are often placed on porous silicon carbide (SiC) vacuum chucks. By connecting to a vacuum generator, negative pressure is applied to securely hold the wafer in place without mechanical clamps. This enables precise and stable processing during the following stages:

• Wax Mounting

• Backside Thinning (Grinding or Lapping)

• Dewaxing

• Cleaning

• Dicing / Sawing

The use of a high-purity, porous SiC vacuum chuck ensures excellent thermal and chemical stability throughout these processes, while minimizing contamination and maintaining wafer flatness. Its superior mechanical strength and thermal conductivity also reduce the risk of wafer breakage during processing, especially for fragile or ultra-thin substrates like GaAs, InP, or SiC.

Frequently Asked Questions (FAQ) – SiC Porous Vacuum Chuck

Q1: What is the main purpose of a porous SiC vacuum chuck?
A: It is used to securely hold thin or fragile wafers during critical processing steps such as wax mounting, thinning, cleaning, and dicing. Vacuum suction through the porous SiC material provides uniform and stable holding without damaging the wafer surface.

Q2: What materials can be processed using a SiC vacuum chuck?
A: It supports a wide range of semiconductor materials, including:

• Silicon (Si)

• Gallium Arsenide (GaAs)

• Indium Phosphide (InP)

• Silicon Carbide (SiC)

• Sapphire
  These are typically thin or brittle wafers that require stable handling during back-end processing.

Q3: What is the advantage of using porous SiC over metal or ceramic chucks?
A: Porous SiC offers several advantages:

• Excellent thermal conductivity – prevents heat buildup during processing

• High mechanical strength – minimizes risk of deformation

• Chemical inertness – compatible with aggressive cleaning chemicals

• Low particle generation – suitable for cleanroom environments

• Stable vacuum distribution – uniform suction across wafer surface

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