 |
6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | 4H Semi-insulating SiC substarte/wafer |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Delivery Time: | 2-4 weeks |
| Payment Terms: | T/T |
|
Detail Information |
|||
| Grade: | Production Grade Research Grade Dummy Grade | Diameter: | 100.0 Mm +/- 0.5 Mm |
|---|---|---|---|
| Thickness: | 500 Um +/- 25 Um (semi-insulating Type), 350 Um +/- 25 Um (N Type) | Wafer Orientation: | On Axis: <0001> +/- 0.5 Deg For 4H-SI Off Axis: 4.0 Deg Toward <11-20> +/-0.5 Deg For 4H-N |
| Electrical Resistivity (Ohm-cm): | 4H-N 0.015~0.028 4H-SI>1E5 | Doping Concentration: | N-type: ~ 1E18/cm3 SI-type (V-doped): ~ 5E18/cm3 |
| Primary Flat: | 32.5 Mm +/- 2.0 Mm | Secondary Flat Length: | 18.0 Mm +/- 2.0 Mm |
| Secondary Flat Orientation: | Silicon Face Up: 90 Deg CW From Primary Flat +/- 5.0 Deg | ||
| Highlight: | 6H-N Semi-insulating SiC Substarte,6H-N Semi-insulating SiC Wafer,Wide Bandgap Semi-insulating SiC Substarte |
||
Product Description
6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap
Semi-insulating SiC substarte/wafer's abstract
Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced electronic devices. Their unique properties, including wide bandgap, high thermal conductivity, and chemical stability, make them highly desirable for a wide range of applications. This abstract provides an overview of the properties and applications of semi-insulating SiC substrates/wafers. It discusses their semi-insulating behavior, which inhibits the free movement of electrons, thereby enhancing the performance and stability of electronic devices. The wide bandgap of SiC enables high electron drift and saturation drift velocities, essential for high-power and high-frequency applications. Additionally, the excellent thermal conductivity of SiC ensures efficient heat dissipation, making it suitable for use in harsh operating environments. The chemical stability and mechanical hardness of SiC further enhance its reliability and durability in various applications. Overall, semi-insulating SiC substrates/wafers offer a compelling solution for the development of next-generation electronic devices with enhanced performance and reliability.
Semi-insulating SiC substarte/wafer's showcase
Semi-insulating SiC substarte/wafer's data chart(partly)
| The main performance parameters | |
|
Product Name
|
Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
|
|
Growth method
|
MOCVD
|
|
Crystal Structure
|
6H, 4H
|
|
Lattice Parameters
|
6H(a=3.073 Å c=15.117 Å),
4H(a=3.076 Å c=10.053 Å ) |
|
Stacking Sequence
|
6H: ABCACB,
4H: ABCB |
|
Grade
|
Production Grade, Research Grade, Dummy Grade
|
|
Conductivity type
|
N-type or Semi-Insulating |
|
Band-gap
|
3.23 eV
|
|
Hardness
|
9.2(mohs)
|
|
Thermal Conductivity @300K
|
3.2~4.9 W/ cm.K
|
|
Dielectric constants
|
e(11)=e(22)=9.66 e(33)=10.33
|
|
Resistivity
|
4H-SiC-N: 0.015~0.028 Ω·cm, 6H-SiC-N: 0.02~0.1 Ω·cm, 4H/6H-SiC-SI: >1E7 Ω·cm |
|
Packing
|
Class 100 clean bag, in class 1000 clean room
|
| Standard Specification | |||||
| Product Name | Orientation | Standard Size | Thickness | Polishing | |
| 6H-SiC substrate 4H-SiC substrate |
<0001> <0001> 4° off toward <11-20> <11-20> <10-10> Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ2" x 0.35mm φ3" x 0.35mm φ4" x 0.35mm φ4" x 0.5mm φ6" x 0.35mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<3A(0.3nm) |
Inquiry Online |
key applications:
Semi-insulating silicon carbide (SiC) substrates/wafers find diverse applications across several high-performance electronic devices. Here are some key applications:
-
Power Electronics: Semi-insulating SiC substrates are extensively used in the manufacturing of power devices such as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), Junction Field-Effect Transistors (JFETs), and Bipolar Junction Transistors (BJTs). The wide bandgap of SiC allows these devices to operate at higher temperatures and voltages, resulting in improved efficiency and reduced losses in power conversion systems for applications like electric vehicles, renewable energy, and industrial power supplies.
-
Radio Frequency (RF) Devices: SiC wafers are employed in RF devices such as microwave power amplifiers and RF switches. The high electron mobility and saturation velocity of SiC enable the development of high-frequency, high-power RF devices for applications like wireless communication, radar systems, and satellite communication.
-
Optoelectronics: Semi-insulating SiC substrates are used in the fabrication of ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). SiC's sensitivity to UV light makes it suitable for UV detection applications in areas such as flame detection, UV sterilization, and environmental monitoring.
-
High-Temperature Electronics: SiC devices operate reliably at elevated temperatures, making them suitable for high-temperature applications like aerospace, automotive, and downhole drilling. SiC substrates are used to manufacture sensors, actuators, and control systems that can withstand harsh operating conditions.
-
Photonics: SiC substrates are employed in the development of photonic devices such as optical switches, modulators, and waveguides. SiC's wide bandgap and high thermal conductivity enable the fabrication of high-power, high-speed photonic devices for applications in telecommunications, sensing, and optical computing.
-
High-Frequency and High-Power Applications: SiC substrates are utilized in the production of high-frequency, high-power devices such as Schottky diodes, thyristors, and high-electron-mobility transistors (HEMTs). These devices find applications in radar systems, wireless communication infrastructure, and particle accelerators.
In summary, semi-insulating SiC substrates/wafers play a crucial role in various electronic applications, offering superior performance, reliability, and efficiency compared to traditional semiconductor materials. Their versatility makes them a preferred choice for next-generation electronic systems across multiple industries.
Recommended similar products(Click on the image to go to the product details page.)
①6Inch Dia153mm 0.5mm monocrystalline SiC
②8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip
③High Precision SiC Spherical Mirror Metal Optical Reflector