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Silicon Carbide (SiC) Ceramic Tray semiconductor etching and photovoltaic wafer handling
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
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Detail Information |
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| Density: | 3.21g/cm ³ | Hardness: | 2500Vickers Hardness |
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| Grain Size: | 2~10μm | Chemical Purity: | 99.99995% |
| Heat Capacity: | 640J·kg-1 ·K-1 | Sublimation Temperature: | 2700℃ |
Product Description
Introduction Of SIC Ceramic Tray
SIC Ceramic Tray (Silicon Carbide Ceramic Tray) is a high-performance industrial carrier tool based on silicon carbide (SiC) material. It is widely used in semiconductor manufacturing, photovoltaics, laser processing, and other fields. Leveraging SiC's exceptional properties—such as high-temperature resistance, corrosion resistance, and high thermal conductivity—it serves as an ideal replacement for traditional materials like graphite and metals in advanced industrial scenarios.
Core Principles SIC Ceramic Tray
(1) Material Properties
High-Temperature Resistance: Melting point up to 2700°C, stable operation at 1800°C, suitable for high-temperature processes (e.g., ICP etching, MOCVD).
High Thermal Conductivity: 140–300 W/m·K (superior to graphite and sintered SiC), ensuring uniform heat distribution and minimizing thermal stress-induced deformation.
Corrosion Resistance: Resistant to strong acids (e.g., HF, H₂SO₄) and alkalis, avoiding contamination or structural damage.
Low Thermal Expansion: Thermal expansion coefficient (4.0×10⁻⁶/K) close to silicon, reducing warpage during temperature changes .
(2) Structural Design
High Purity & Density: SiC content ≥99.3%, porosity ≈0, formed via high-temperature sintering (2250–2450°C) to prevent particle shedding.
Customizable Sizes: Supports large diameters (e.g., φ600mm) and integrated features (vacuum holes, grooves) for wafer handling and vacuum sputtering
Key Applications SIC Ceramic Tray
(1) Semiconductor Manufacturing
Wafer Processing: Used in ICP etching and CVD (Chemical Vapor Deposition) to stabilize wafer positioning.
MOCVD Equipment: Acts as a carrier for GaN (gallium nitride) growth in high-brightness LEDs, enduring 1100–1200°C temperatures .
(2) Photovoltaics
Silicon Crystal Growth: Replaces quartz crucibles in polycrystalline silicon production, tolerating melt temperatures >1420°C.
(3) Laser & Precision Machining
Etching/Cutting: Serves as a platform for laser-etched materials, resisting high-energy beam impacts.
(4) Chemical & Environmental Engineering
Corrosion-Resistant Equipment: Used in pipelines and reactors for aggressive fluid handling
Q&A SIC Ceramic Tray
Q1: How does SIC compare to graphite trays?
A: SIC withstands higher temperatures (1800°C vs. ~1000°C) and avoids coating delamination. Its thermal conductivity is 2–3× higher, reducing wafer warpage .
Q2: Can SIC trays be reused? Maintenance tips?
A: Yes, but avoid mechanical impacts and extreme temperatures. Clean residues with soft tools; store dry to prevent moisture absorption .
Q3: Common failure modes?
A: Cracking from thermal shock or mechanical stress. Pure CVD SiC trays resist warpage unless physically damaged .
Q4: Suitable for vacuum environments?
A: Yes. High purity and low outgassing make them ideal for vacuum sputtering and semiconductor etching .
Q5: How to select specifications?
A: Consider process temperature, load capacity, and compatibility (e.g., φ600mm trays for large wafers)
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