Semi-Insulating SiC Wafers 3inch 76.2mm 4H Type SiC For Semiconductors

Semi-Insulating SiC Wafers 3inch 76.2mm 4H Type SiC For Semiconductors

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: Semi-insulating SiC wafers 3inch

Payment & Shipping Terms:

Minimum Order Quantity: 1
Delivery Time: 2-4 weeks
Payment Terms: T/T
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Detail Information

Size: 3inch 76.2mm Crystal Structure: Hexagonal
Energy Gap:Eg(eV): 3.26 Electron Mobility: μ,(cm^2 /Vs): 900
Hole Mobility:up(cm^2): 100 Breakdown Field: E(V/cm)X10^6: 3
Thermal Conductivity(W/cm): 4.9 Relative Dielectric Constant: Es: 9.7
High Light:

Semiconductors SiC Wafers


Semi Insulating SiC Wafers


3inch Silicon Carbide Wafer

Product Description



The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices.


Key features of the 4-H Semi-Insulating SiC substrate include highly uniform electrical properties, low impurity concentration, and outstanding thermal stability. These attributes make it suitable for the fabrication of high-frequency RF power devices, high-temperature electronic sensors, and microwave electronic equipment. Its high breakdown field strength and excellent thermal conductivity also position it as the preferred substrate for high-power devices.


Furthermore, the 4-H Semi-Insulating SiC substrate demonstrates excellent chemical stability, allowing it to operate in corrosive environments and expanding its range of applications. It plays a critical role in industries such as semiconductor manufacturing, telecommunications, defense, and high-energy physics experiments.


In summary, the 4-H Semi-Insulating SiC substrate, with its outstanding electrical and thermal properties, holds significant promise in the semiconductor field and provides a reliable foundation for the production of high-performance electronic devices.






Electrical Properties:

  1. High Resistivity: 4H Semi-Insulating SiC has very high resistivity, making it an excellent material for semi-insulating applications where low electrical conductivity is desired.
  2. High Breakdown Voltage: Due to its wide bandgap, 4H Semi-Insulating SiC has a high breakdown voltage, making it suitable for high-power and high-voltage applications.


Thermal Properties:

  1. High Thermal Conductivity: SiC in general has high thermal conductivity, and this property extends to 4-H Semi-Insulating SiC as well, aiding in efficient heat dissipation.
  2. Thermal Stability: This material maintains its properties and performance even at high temperatures, making it suitable for use in harsh thermal environments.


Mechanical and Physical Properties:

  1. Hardness: Like other forms of SiC, the 4-H Semi-Insulating variant is also very hard and abrasion-resistant.
  2. Chemical Inertness: It is chemically inert and resistant to most acids and alkalis, ensuring stability and longevity in harsh chemical environments.
Polytype Single Crystal 4H
Lattice Parameters a=3.076 A
C=10.053 A
Stacking Sequence ABCB
Band-gap 3.26 eV
Density 3.21 10^3 kg/m^3
Therm. Expansion Coefficient 4-5x10^-6/K
Refraction Index no = 2.719
ne = 2.777
Dielectric Constant 9.6
Thermal Conductivity 490 W/mK
Break-Down Electrical Field 2-4 108 V/m
Saturation Drift Velocity 2.0 105 m/s
Electron Mobility 800 cm^2NS
hole Mobility 115 cm^2N·S
Mohs Hardness 9

Optical Properties:

  1. Transparency in Infrared: 4H Semi-Insulating SiC is transparent to infrared light, which can be beneficial in certain optical applications.


Advantages for Specific Applications:

  1. Electronics: Ideal for high-frequency and high-power devices due to its high breakdown voltage and thermal conductivity.
  2. Optoelectronics: Suitable for optoelectronic devices that operate in the infrared region.
  3. Power Devices: Used in the manufacturing of power devices such as Schottky diodes, MOSFETs, and IGBTs.

4H Semi-Insulating SiC is a versatile material that is used in various high-performance applications due to its exceptional electrical, thermal, and physical properties.


Semi-Insulating SiC Wafers 3inch 76.2mm 4H Type SiC For Semiconductors 0


About our company


SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized 2

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Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.


During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.



We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.


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