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6inch dia150mm SIC Wafer 4H-N Type Sic substrate for MOS device
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Model Number: | 6inch 4h-n sic wafers |
Payment & Shipping Terms:
| Minimum Order Quantity: | 5pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 1-6weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
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Detail Information |
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| Material: | SiC Single Crystal 4h-N | Grade: | Production Grade |
|---|---|---|---|
| Thicnkss: | 0.4mm | Suraface: | Lapped |
| Application: | For Polish Test | Diameter: | 6inch |
| Color: | Green | MPD: | <2cm-2 |
| High Light: | 4H-N Type epitaxial wafers,6 Inch epitaxial wafers,4H-N Type epi wafer |
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Product Description
4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal
6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm |
no = 2.61 |
no = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K |
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| Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K |
a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
SiC Applications
Application areas
- 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
- diodes, IGBT, MOSFET
- 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification
| 6inch N-Type SiC Substrates Specifications | ||||
| Property | P-MOS Grade | P-SBD Grade | D Grade | |
| Crystal Specifications | ||||
| Crystal Form | 4H | |||
| Polytype Area | None Permitted | Area≤5% | ||
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 | |
| Hex Plates | None Permitted | Area≤5% | ||
| Hexagonal Polycrystal | None Permitted | |||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A | |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm | |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A | |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A | |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A | |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A | |
| (Stacking Fault) | ≤0.5% Area | ≤1% Area | N/A | |
| Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 | |||
| Mechanical Specifications | ||||
| Diameter | 150.0 mm +0mm/-0.2mm | |||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5° | |||
| Primary Flat Length | 47.5 mm ± 1.5 mm | |||
| Secondary Flat Length | No Secondary Flat | |||
| Primary Flat Orientation | <11-20>±1° | |||
| Secondary Flat Orientation | N/A | |||
| Orthogonal Misorientation | ±5.0° | |||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | |||
| Wafer Edge | Beveling | |||
| Surface Roughness (10μm×10μm) |
Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | |||
| Thickness a | 350.0μm± 25.0 μm | |||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | ||
| (TTV)a | ≤6μm | ≤10μm | ||
| (BOW) a | ≤15μm | ≤25μm | ≤40μm | |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm | |
| Surface Specifications | ||||
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | ||
| Scratches a (Si Face,CS8520) |
≤5 and Cumulative Length≤0.5×Wafer Diameter | ≤5 and Cumulative Length≤1.5× Wafer Diameter | ||
| TUA(2mm*2mm) | ≥98% | ≥95% | N/A | |
| Cracks | None Permitted | |||
| Contamination | None Permitted | |||
| Edge Exclusion | 3mm | |||
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4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
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6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot |
Customzied size for 2-6inch
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>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.