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Thick 350 um 2 Inch Single Crystal InP Semiconductor Substrate Prime
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February 20, 2023
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Germanium/ Indium Phosphide / Gallium Arsenide Wafer
InP wafer
Indium Phosphide Based Epitaxial Wafer
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
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Single Crystal Si Wafer Electronic Device Substrate Photolithography Layer 2"3"4"6"8"
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High Purity Silicon Wafer Conductivity Solar Cells Power Semiconductor Devices
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4 Inches 6 Inches 8 Inches SOI Wafers Compatible With CMOS Three Layer Structure
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Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System
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