Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
Product Details:
Place of Origin: | CHINA |
Brand Name: | zmkj |
Model Number: | InP |
Payment & Shipping Terms:
Minimum Order Quantity: | 3pcs |
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Price: | by case |
Packaging Details: | single wafer package in 1000-grade cleaning room |
Delivery Time: | 2-4weeks |
Payment Terms: | T/T, Western Union |
Supply Ability: | 500pcs |
Detail Information |
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Material: | InP | Growth Method: | VFG |
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SIZE: | 2~ 4 INCH | Thickness: | 350-650um |
Application: | III-V Direct Bandgap Semiconductor Material | Surface: | Ssp/dsp |
Package: | Single Wafer Box | ||
Highlight: | Single Crystal Indium Phosphide Wafers,650um Indium Phosphide Wafers,InP Semiconductor Substrate Wafers |
Product Description
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate
size (mm)
|
Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
|
Ra
|
Surface roughness(Ra):<=5A
|
Polish
|
Single or doubles side polished
|
Package
|
100 single or doubles side polished
|
It has the advantages of high electronic limit drift speed, good radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
Features of Inp Wafer
performance.
2. using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3. the wafer is polished by chemical mechanical polishing (CMP) technology, with surface roughness <0.5nm
4. to achieve the "open box ready to use" requirements
5. according to user requirements, special specifications product processing
Wafer Diameter(mm)
|
50.8±0.3
|
76.2±0.3
|
100±0.3
|
Thickness(um)
|
350±25
|
625±25
|
625±25
|
TTV-P/P(um)
|
≤10
|
≤10
|
≤10
|
TTv-P/E(um)
|
≤10
|
≤15
|
≤15
|
WARP(um)
|
≤15
|
≤15
|
≤15
|
OF(mm)
|
17±1
|
22±1
|
32.5±1
|
OF/IF(mm)
|
7±1
|
12±1
|
18±11
|
Description | Application | Wavelength Range |
InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
DFB laser | 1270nm~1630nm | |
Avalanche photo-detector | 1250nm~1600nm | |
Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
Product Name |
High Purity Indium Phosphide Polycrystalline Substrate Sheet |
Iron Doped Indium Phosphide Crystal |
N-type and P-type Indium Phosphide Crystal |
4 Inch Indium Phosphide Single Crystal Ingot |
Indium Phosphide Based Epitaxial Wafer |
Indium Phosphide Semiconductor Crystal Substrate |
Indium Phosphide Single Crystal Substrate |
Indium Antimonide Single Crystal Substrate |
Indium Arsenic Single Crystal Substrate |
---FAQ –
Q: Are you a trading company or manufacturer?
A: zmkj is a trading company but has a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.
Q: How long is your delivery time?
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.