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SiC Substrate Silicon Carbide Subatrte 4H/6H-P 3C-N 5×5 10×10mm P Grade R Grade D Grade
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
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Detail Information |
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| Diameter: | 5*5mm±0.2mm 10*10mm±0.2mm | Thickness: | 350 Umt25 Um |
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| Wafer Orientation: | Off Axis: 2.0°-4.0°toward [1120]+0.5° For 4H/6H-P, On Axis:(111)+ 0.5° For 3C-N | Micropipe Density: | 0 Cm-2 |
| Resistivity 4H/6H-P: | <0.1 2·cm | Resistivity 3C-N: | <0.8 MQ.cm |
| Primary Flat Length: | 15.9 Mm +1.7 Mm | Secondary Flat Length: | 8.0 Mm +1.7 Mm |
| High Light: | 10×10mm SiC Substrate,4H/6H-P SiC Substrate,3C-N SiC Substrate |
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Product Description
SiC Substrate Silicon carbide subatrte 4H/6H-P 3C-N 5×5 10×10mm P grade R grade D grade
4H/6H-P SiC Substrate 5×5 10×10mm's abstratct
The 4H/6H-P Silicon Carbide (SiC) substrate, with dimensions of 5×5 mm and 10×10 mm, represents a pivotal advancement in semiconductor materials, particularly for high-power and high-temperature applications. SiC, a wide bandgap semiconductor, exhibits exceptional thermal conductivity, high breakdown electric field strength, and robust mechanical properties, making it a preferred choice for next-generation power electronics and optoelectronic devices. This study explores the fabrication techniques employed to achieve high-quality 4H/6H-P SiC substrates, addressing common challenges such as defect minimization and wafer uniformity. Furthermore, the paper highlights the substrate's applications in power devices, RF devices, and other high-frequency applications, emphasizing its potential to revolutionize the semiconductor industry. The findings suggest that these SiC substrates will play a crucial role in the development of more efficient and reliable electronic devices, enabling breakthroughs in performance and energy efficiency.
4H/6H-P SiC Substrate 5×5 10×10mm's properties
The 4H/6H-P SiC (Silicon Carbide) substrate, particularly in the dimensions of 5×5 mm and 10×10 mm, exhibits several remarkable properties that make it a preferred choice in high-performance semiconductor applications:
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Wide Bandgap: The wide bandgap of SiC (approximately 3.26 eV for 4H and 3.02 eV for 6H) allows for operation at high temperatures and voltages, which is beneficial for power electronics.
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High Thermal Conductivity: SiC has excellent thermal conductivity, around 3.7 W/cm·K, which helps in efficient heat dissipation, making it suitable for high-power devices.
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High Breakdown Electric Field: SiC can withstand high electric fields (up to 3 MV/cm), making it ideal for power devices that require high voltage handling capabilities.
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Mechanical Strength: SiC is known for its mechanical robustness, offering high resistance to wear and tear, which is critical for devices operating under extreme conditions.
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Chemical Stability: SiC is chemically stable, resistant to oxidation and corrosion, making it suitable for harsh environments, including aerospace and automotive applications.
These properties enable 4H/6H-P SiC substrates to be used in a wide range of applications, including high-power transistors, RF devices, and optoelectronics, where performance and reliability are crucial.
4H/6H-P SiC Substrate 5×5 10×10mm's picture
4H/6H-P SiC Substrate 5×5 10×10mm's applications
The 4H/6H-P SiC (Silicon Carbide) substrate, particularly in the sizes of 5×5 mm and 10×10 mm, is utilized in various high-performance and demanding applications across multiple industries:
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Power Electronics: SiC substrates are widely used in power devices like MOSFETs, IGBTs, and Schottky diodes, which are essential in electric vehicles, renewable energy systems, and power grids. The wide bandgap and high breakdown voltage of SiC allow for efficient energy conversion and operation under high voltages and temperatures.
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RF and Microwave Devices: SiC is an excellent material for RF and microwave devices used in telecommunications, radar systems, and satellite communication. Its ability to operate at high frequencies and temperatures with low signal loss makes it suitable for high-power amplifiers and switches.
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Optoelectronics: SiC substrates are used in LEDs and laser diodes, particularly in the UV and blue wavelength ranges. These are critical components in optical communication, industrial processes, and environmental monitoring.
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Aerospace and Automotive: Due to its thermal stability and resistance to harsh environments, SiC is used in aerospace and automotive sensors, actuators, and power modules, where reliability under extreme conditions is crucial.
These applications highlight the importance of 4H/6H-P SiC substrates in advancing technologies that require efficiency, durability, and high-performance operation.
Q&A
What is 4H in 4H-SiC?
4H-SiC and 6H-SiC represent hexagonal crystal structures, with "H" indicating hexagonal symmetry and the numbers 4 and 6 the layers in their unit cells. This structural variation affects the material's electronic band structure, which is a key determinant of a semiconductor device's performance.