 |
5×5mm 10×10mm SiC Wafer 4H-P 6H-P 3C-N Type Production Grade Research Grade Dummy Grade
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
Payment & Shipping Terms:
| Delivery Time: | 2 weeks |
|---|---|
| Payment Terms: | 100%T/T |
|
Detail Information |
|||
| Type: | 4H/6H-P 3C-N | TTV/Bow /Warp: | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm |
|---|---|---|---|
| Grade: | Production/ Research/ Dummy | Diameter: | 5*5mm±0.2mm & 10*10mm±0.2mm |
| Thickness: | 350 μm±25 μm | Wafer Orientation: | Off Axis: 2.0°-4.0°toward �112�0� ± 0.5° For 4H/6H-P, On Axis: 〈111〉 ± 0.5° For 3C-N |
| Resistivity: | 4H/6H-P ≤0.1 Ωcm 3C-N ≤0.8 MΩ•cm | Edge Exclusion: | 3 Mm |
| Highlight: | 3C-N SiC Wafer,4H-P SiC Wafer,6H-P SiC Wafer |
||
Product Description
5×5mm 10×10mm SiC Wafer 4H-P 6H-P 3C-N Type Production Grade Research Grade Dummy Grade
Description of 5×5mm and 10×10mm SiC wafer:
5×5mm and 10×10mm silicon carbide (SiC) wafers are small-sized substrates that play a crucial role in various semiconductor applications. Commonly used in compact electronic devices where space is limited. These SiC wafers are essential components in the fabrication of electronic devices, power electronics, optoelectronics, and sensors. Their specific sizes cater to different requirements in terms of space constraints, experimentation needs, and production scalability. Researchers, engineers, and manufacturers leverage these SiC wafers to develop cutting-edge technologies and explore the unique properties of silicon carbide for a wide range of applications.
The Characters of 5×5mm and 10×10mm SiC wafer:
4H-P Type SiC:
High electron mobility.
Suitable for high-power and high-frequency applications.
Excellent thermal conductivity.
Ideal for high-temperature operations.
6H-P Type SiC:
Good mechanical strength.
High thermal conductivity.
Used in high-power and high-temperature applications.
Suitable for harsh environment electronics.
3C-N Type SiC:
Versatile for electronics and optoelectronics.
Compatible with silicon technology.
Suitable for integrated circuits.
Offers opportunities for wide-bandgap electronics
The Form of 5×5mm and 10×10mm SiC wafer:
| Grade | Production Grade (P Grade) |
Research Grade (R Grade) |
Dummy Grade (D Grade) |
|
| Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | ||
| 3C-N | {1-10} ±5.0° | |||
| Primary Flat Length | 15.9 mm ±1.7 mm | |||
| Secondary Flat Length | 8.0 mm ±1.7 mm | |||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
| Roughness | Polish Ra≤1 nm CMP Ra≤0.2 nm |
|||
| Edge Cracks By High Intensity Light |
None | 1 allowed, ≤1 mm | ||
| Hex Plates By High Intensity Light |
Cumulative area≤1 % | Cumulative area≤3 % | ||
| Polytype Areas By High Intensity Light |
None | Cumulative area≤2 % | Cumulative area≤5% | |
| Silicon Surface Scratches By High Intensity Light |
3 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
8 scratches to 1×wafer diameter cumulative length |
|
| Edge Chips High By Intensity Light light |
None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |
| Silicon Surface Contamination By High Intensity |
None | |||
| Packaging | Multi-wafer Cassette or Single Wafer Container | |||
The Physical Photo of 5×5mm and 10×10mm SiC wafer:
The Application of 5×5mm and 10×10mm SiC wafer:
4H-P Type SiC:
High-power electronics: Used in power diodes, MOSFETs, and high-voltage rectifiers.
RF and microwave devices: Suitable for high-frequency applications.
High-temperature environments: Ideal for aerospace and automotive systems.
6H-P Type SiC:
Power electronics: Utilized in Schottky diodes, power MOSFETs, and thyristors for high-power applications.
High-temperature electronics: Suitable for harsh environment electronics.
3C-N Type SiC:
Integrated circuits: Ideal for ICs and MEMS due to compatibility with silicon technology.
Optoelectronics: Used in LEDs, photodetectors, and sensors.
Biomedical sensors: Applied in biomedical devices for various sensing applications.
The Application Pictures of 5×5mm and 10×10mm SiC wafer:
FAQ:
1.Q:What is the difference between 3C and 4H-SiC?
A:In general 3C-SiC is known as a low- temperature stable polytype whereas 4H-and 6H-SiC are known as high-temperature stable polytypes, which need relatively high temperature and the amount of defects of the epitaxial layer are correlated to the Cl/Si ratio.
Product Recommend:
1.1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial