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SiC Wafer 4H N Type 8inch Production grade Dummy grade Customized Double side polished Silicon Carbide Wafer
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | Silicon Carbide Wafer |
Payment & Shipping Terms:
| Delivery Time: | 2-4weeks |
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| Payment Terms: | T/T |
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Detail Information |
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| Parameter: | N-type | Polytype: | 4H |
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| Thickness: | 500.0µm±25.0µm | Grades: | Prime, Dummy，Reaserch |
| Diameter: | 200.0 Mm +0mm/-0.5mm | Notch Orientation: | <1-100>±1° |
| Surface Roughness(10µm×10µm): | Si Face Ra≤0.2 Nm ；C Face Ra≤0.5 Nm | Surface Metal Contamination: | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca,V, Mn) ≤1E11cm-2 |
| Highlight: | 8inch diameter SiC Wafer,LTV TTV BOW Warp SiC Wafer,P Grade SiC Wafer |
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Product Description
SiC Wafer 4H N Type 8inch Production grade Dummy grade Customized Double side polished Silicon Carbide Wafer
Description of SiC Wafer:
SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. Compared to other semiconductors, a silicon carbide wafer is ideal for a wide range of power and voltage applications. This means that it is suitable for a variety of electrical and optical devices. SiC wafer is the most popular semiconductor material available. It is a high-quality semiconductor material that is perfect for many applications. The silicon carbide wafer is a very useful material for various kinds of electronic devices. We offer an assortment of high-quality SiC wafers and substrates. These are available in both n-type and semi-insulating forms.
The Character of SiC Wafer:
1. High Bandgap Energy
2. High Thermal Conductivity
3. High Hardness
4. Good Chemical Stability
The Form of SiC Wafer:
| Property | P Grade | D Grade | |
| Crystal Form | 4H | ||
| Polytype | None Permitted | Area≤5% | |
| (MPD) a | ≤1/cm2 | ≤5/cm2 | |
| Hex Plates | None Permitted | Area≤5% | |
| Inclusions a | Area≤0.05% | N/A | |
| Resistivity | 0.015Ω•cm—0.028Ω•cm | 0.014Ω•cm—0.028Ω•cm | |
| (EPD)a | ≤8000/cm2 | N/A | |
| (TED)a | ≤6000/cm² | N/A | |
| (BPD)a | ≤2000/cm² | N/A | |
| (TSD)a | ≤1000/cm² | N/A | |
| Stacking Fault | ≤1% Area | N/A | |
| Notch Orientation | <1-100>±1° | ||
| Notch Angle | 90° +5°/-1° | ||
| Notch Depth | 1.00mm+0.25mm/-0mm | ||
| Orthogonal Misorientation | ±5.0° | ||
| Surface Finish | C-Face: Optical Polish ,Si-Face: CMP | ||
| Wafer Edge | Beveling | ||
| Surface Roughness(10µm×10µm) | Si Face Ra≤0.2 nm ；C Face Ra≤0.5 nm | ||
| LTV(10mm×10mm)a | ≤3µm | ≤5µm | |
| (TTV)a | ≤10µm | ≤10µm | |
| (BOW)a | ≤25µm | ≤40µm | |
| (Warp)a | ≤40µm | ≤80µm | |
The Physical photo of SiC Wafer:
Application of SiC Wafer:
1. Power Devices:
SiC wafers are extensively used in manufacturing power electronic devices such as power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), Schottky diodes, and power-integrated modules. Due to the advantages of high thermal conductivity, high breakdown voltage, and high electron mobility of SiC, these devices can achieve efficient and high-performance power conversion in high-temperature, high-voltage, and high-frequency environments.
2. Optoelectronic Devices:
SiC wafers play a crucial role in optoelectronic devices, being used to manufacture photodetectors, laser diodes, UV sources, among others. The superior optical and electronic properties of silicon carbide make it a preferred material, especially excelling in applications requiring high temperatures, frequencies, and power levels.
3. Radio Frequency (RF) Devices:
SiC wafers are also employed in the fabrication of RF devices such as RF power amplifiers, high-frequency switches, RF sensors, and more. The high thermal stability, high-frequency characteristics, and lower losses of SiC make it an ideal choice for RF applications like wireless communication and radar systems.
4. High-Temperature Electronics:
Due to its high thermal stability and temperature resilience, SiC wafers are used in the production of electronics designed to operate in high-temperature environments, including high-temperature power electronics, sensors, and controllers.
Application Picture of SiC Wafer:
Q&A:
1. Q: What's the significance of high-quality silicon carbide wafers?
A: This is a crucial step in enabling the large-scale production of silicon carbide devices, meeting the semiconductor industry's demand for high-performance and highly reliable devices.
2. Q: How are silicon carbide wafers utilized in specific semiconductor applications such as power electronics and optoelectronics?
A: Silicon carbide wafers are utilized in power electronics for devices like power MOSFETs, Schottky diodes, and power modules due to their high thermal conductivity and voltage handling capabilities. In optoelectronics, SiC wafers are used for photodetectors, laser diodes, and UV sources because of their wide bandgap and high-temperature stability, enabling high-performance optoelectronic devices.
3. Q: What advantages does silicon carbide (SiC) offer over traditional silicon wafers in semiconductor applications?
A: Silicon carbide offers several advantages over traditional silicon wafers, including higher breakdown voltage, higher thermal conductivity, wider bandgap, and enhanced temperature stability. These properties make SiC wafers ideal for high-power, high-frequency, and high-temperature applications where traditional silicon wafers may not perform optimally.
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4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrate