Product Description

8inch 12inch 4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade

8inch 12inch 4H-N type SiC Wafer's abstract

This study presents the characterization of an 8-inch 12-inchH-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer, with a thickness of 500±25 µm, was fabricated using state-of-the-art techniques and is doped with n-type impurities. Characterization techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), and Hall effect measurements were employed to assess the crystal quality, surface morphology, and electrical properties of the wafer. The XRD analysis confirmed the 4H polytype structure of the SiC wafer, while SEM imaging revealed a uniform and defect-free surface morphology. Hall effect measurements indicated a consistent and controllable n-type doping level across the wafer surface. The results suggest that the 8-inch 4H-N type SiC wafer exhibits promising characteristics for use in high-performance semiconductor devices, particularly in applications requiring high power and high temperature operation. Further optimization and device integration studies are warranted to fully exploit the potential of this material platform.

8inch 12-inch 4H-N type SiC Wafer's properties

1. Crystal Structure: Exhibits a hexagonal crystal structure with a 4H polytype, providing favorable electronic properties for semiconductor applications.

2. Wafer Diameter: 8 inches, providing a large surface area for device fabrication and scalability.

3. Wafer Thickness: Typically 500±25 µm, providing mechanical stability and compatibility with semiconductor manufacturing processes.

4. Doping: N-type doping, where nitrogen atoms are intentionally introduced as impurities to create an excess of free electrons in the crystal lattice.

5. Electrical Properties:

   • High electron mobility, allowing for efficient charge transport.
   • Low electrical resistivity, facilitating the conduction of electricity.
   • Controlled and uniform doping profile across the wafer surface.

6. Material Purity: High purity SiC material, with low levels of impurities and defects, ensuring reliable device performance and longevity.

7. Surface Morphology: Smooth and defect-free surface morphology, suitable for epitaxial growth and device fabrication processes.

8. Thermal Properties: High thermal conductivity and stability at elevated temperatures, making it suitable for high-power and high-temperature applications.

9. Optical Properties: Wide bandgap energy and transparency in the visible and infrared spectrum, enabling optoelectronic device integration.

10. Mechanical Properties:

    • High mechanical strength and hardness, providing durability and resilience during handling and processing.
    • Low coefficient of thermal expansion, reducing the risk of thermal stress-induced cracking during temperature cycling.

      Number	Item	Unit	Production	Research	Dummy
      1	polytype		4H	4H	4H
      2	surface orientation	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
      3	dopant		n-type Nitrogen	n-type Nitrogen	n-type Nitrogen
      4	resistivity	ohm ·cm	0.015~0.025	0.01~0.03
      5	diameter	mm	200±0.2 300	200±0.2 300	200±0.2 300
      6	thickness	μm	500±25 1000±50	500±25 1000±50	500±25 1000±50
      7	Notch orientation	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
      8	Notch Depth	mm	1~1.5	1~1.5	1~1.5
      9	LTV	μm	≤5(10mm×10mm)	≤5(10mm×10mm)	≤10(10mm×10mm)
      10	TTV	μm	≤10	≤10	≤15
      11	Bow	μm	25~25	45~45	65~65
      12	Warp	μm	≤30	≤50	≤70

8inch 12 inch 4H-N type SiC Wafer's image

8inch 12inch 4H-N type SiC Wafer's application

Power Electronics: SiC wafers are extensively used in the fabrication of power devices such as Schottky diodes, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), and IGBTs (Insulated Gate Bipolar Transistors). These devices benefit from SiC's high breakdown voltage, low on-state resistance, and high-temperature performance, making them suitable for applications in electric vehicles, renewable energy systems, and power distribution systems.

RF and Microwave Devices: SiC wafers are employed in the development of high-frequency RF (Radio Frequency) and microwave devices due to their high electron mobility and thermal conductivity. Applications include high-power amplifiers, RF switches, and radar systems, where SiC's performance advantages enable efficient power handling and high-frequency operation.

Optoelectronics: SiC wafers are utilized in the fabrication of optoelectronic devices such as ultraviolet (UV) photodetectors, light-emitting diodes (LEDs), and laser diodes. SiC's wide bandgap and optical transparency in the UV range make it suitable for applications in UV sensing, UV sterilization, and high-brightness UV LEDs.

High-Temperature Electronics: SiC wafers are preferred for electronic systems operating in harsh environments or at elevated temperatures. Applications include aerospace electronics, downhole drilling equipment, and automotive engine control systems, where SiC's thermal stability and reliability enable operation under extreme conditions.

Sensor Technology: SiC wafers are used in the development of high-performance sensors for applications such as temperature sensing, pressure sensing, and gas sensing. SiC-based sensors offer advantages such as high sensitivity, fast response times, and compatibility with harsh environments, making them suitable for industrial, automotive, and aerospace applications.