SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips

10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips

  • High Light

    Silicon Carbide Wafer 10x10x0.5mm

    ,

    SiC Chips Silicon Carbide Wafer

    ,

    SiC Wafer Window Piece

  • Material
    SiC Single Crystal 4H-N Type
  • Grade
    Dummy /Production / Research Grade
  • Thicnkss
    0.5MM
  • Suraface
    Polished
  • Application
    Bearing Test
  • Diameter
    10x10x0.5mmt
  • Color
    Tea Green
  • Place of Origin
    CHINA
  • Brand Name
    ZMKJ
  • Model Number
    10x10x0.5mmt
  • Minimum Order Quantity
    5pcs
  • Price
    by case
  • Packaging Details
    single wafer package in 100-grade cleaning room
  • Delivery Time
    2-3weeks
  • Payment Terms
    T/T, Western Union, MoneyGram
  • Supply Ability
    1-50pcs/month

10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips

 
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers SiC windows/lens/glasses

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

4 inch n-doped 4H Silicon Carbide SiC Wafer

 High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips 1

 
CATALOGUE   COMMON  SIZE                             
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 
4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
 Customzied size for 2-6inch 
 

About ZMKJ Company
 
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 
Our Relation  Products 
Sapphire wafer& lens/  LiTaO3 Crystal/  SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball

10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips 2

10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips 3