6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

Basic Information
Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 6inch 4h-n sic wafers
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Material: SiC Single Crystal 4h-N Grade: Production Grade
Thicnkss: 0.4mm Suraface: Lapped
Application: For Polish Test Diameter: 6inch
Color: Green MPD: <2cm-2

 

4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal

6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

 

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

SiC Applications

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

4 inch n-doped 4H Silicon Carbide SiC Wafer

4H-N  4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
 
Diameter 100. mm±0.2mm  
 
Thickness 1000±25um Or other customized thickness   
 
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI  
 
Micropipe Density ≤0 cm-2 ≤2 cm-2 ≤5cm-2 ≤30 cm-2  
 
Resistivity 4H-N 0.015~0.028 Ω•cm  
 
     
 
4/6H-SI ≥1E7 Ω·cm  
 
Primary Flat {10-10}±5.0° or round shape   
 
Primary Flat Length 18.5 mm±2.0 mm or round shape  
 
Secondary Flat Length 10.0mm±2.0 mm  
 
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
 
Edge exclusion 1 mm  
 
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm  
 
Roughness Polish Ra≤1 nm  
 
CMP Ra≤0.5 nm  
 
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
 
 
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
 
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
 
 
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
 
 
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  

 

Production display show

6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic 16inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic 26inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic 3

 
CATALOGUE   COMMON  SIZE   In  OUR INVENTORY LIST  
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
 Customzied size for 2-6inch 
 

>Packaging – Logistcs

we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596