 |
6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Model Number: | 4inch high purity sic wafers |
Payment & Shipping Terms:
| Minimum Order Quantity: | 2pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 1-4weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
|
Detail Information |
|||
| Material: | SiC Single Crystal 4h-N | Grade: | Production Grade |
|---|---|---|---|
| Thicnkss: | 2mm Or 0.5mm | Suraface: | Dsp |
| Application: | Epitaxial | Diameter: | 4inch |
| Color: | Colorless | MPD: | <1cm-2 |
| Highlight: | carborundum Silicon wafer,dummy grade Silicon wafer,DSP monocrystalline silicon wafer |
||
Product Description
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single
un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch production dummy Grade
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm |
no = 2.61 |
no = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K |
a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification
| 2inch diameter Silicon Carbide (SiC) Substrate Specification | ||||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||||
| Diameter | 100. mm±0.38mm 150±0.5mm | |||||||||
| Thickness | 500±25um Or other customized thickness | |||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | |||||||||
| Micropipe Density | ≤0.4cm-2 | ≤1cm-2 | ≤5cm-2 | ≤10 cm-2 | ||||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | ||||||||
| 6H-N | 0.02~0.1 Ω•cm | |||||||||
| 4/6H-SI | ≥1E7 Ω·cm | |||||||||
| Primary Flat | {10-10}±5.0° | |||||||||
| Primary Flat Length | 18.5 mm±2.0 mm | |||||||||
| Secondary Flat Length | 10.0mm±2.0 mm | |||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||||||
| Edge exclusion | 1 mm | |||||||||
| TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||||||||
| Roughness | Polish Ra≤1 nm | |||||||||
| CMP Ra≤0.5 nm | ||||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||||
Production display show
|
4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
|
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot |
Customzied size for 2-6inch
|
SiC Applications
Application areas
- 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
- diodes, IGBT, MOSFET
- 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
1. High-Power Electronic Devices
Due to its superior thermal conductivity, high breakdown voltage, and wide bandgap, 6N purity undoped HPSI SiC wafers are ideal for high-power electronic devices. These wafers can be used in power electronics such as diodes, MOSFETs, and IGBTs for applications like electric vehicles, renewable energy systems, and power grid management, enabling efficient power conversion and reducing energy losses.
2. Radio Frequency (RF) and Microwave Devices
HPSI SiC wafers are essential for RF and microwave devices, particularly for use in telecommunications, radar, and satellite communication systems. Their semi-insulating nature helps in reducing parasitic capacitances and improving high-frequency performance, making them suitable for RF amplifiers, switches, and oscillators in wireless communication and defense technologies.
3. Optoelectronic Devices
SiC wafers are increasingly used in optoelectronic applications, including UV detectors, LEDs, and lasers. The 6N purity undoped wafers provide superior material characteristics that enhance the performance of these devices, particularly in harsh environments where conventional silicon-based devices would fail. Applications include medical diagnostics, military equipment, and industrial sensing.
4. Wide Bandgap Semiconductors for Harsh Environments
SiC wafers are known for their ability to function in extreme temperatures and high-radiation environments. These characteristics make 6N purity SiC wafers perfect for aerospace, automotive, and defense industries, where devices need to operate under harsh conditions, such as in spacecraft, high-temperature engines, or nuclear reactors.
5. Research and Development
As a dummy prime-grade wafer, this type of SiC wafer is used in R&D environments for testing and calibration purposes. Its high purity and polished surface make it ideal for validating processes in semiconductor fabrication, testing new materials, and developing new semiconductor devices without the need for active doping. It's frequently used in academic and industrial research labs for studies in materials science, device physics, and semiconductor engineering.
6. High-Frequency Switching Devices
SiC wafers are commonly utilized in high-frequency switching devices for applications in power management systems. Their wide bandgap and semi-insulating properties make them highly efficient for handling fast switching speeds with reduced power losses, which are critical in systems like inverters, converters, and uninterruptible power supplies (UPS).
7. Wafer-Level Packaging and MEMS
The DSP surface of the SiC wafer allows for precise integration into wafer-level packaging and micro-electromechanical systems (MEMS). These applications require extremely smooth surfaces for high-resolution patterning and etching, making the polished surface of the 6N purity wafer a crucial feature. MEMS devices are commonly used in sensors, actuators, and other miniaturized systems for automotive, medical, and consumer electronics applications.
8. Quantum Computing and Advanced Electronics
In cutting-edge applications like quantum computing and next-generation semiconductor devices, the undoped HPSI SiC wafer serves as a stable and highly pure platform for building quantum devices. The high purity and semi-insulating properties make it an ideal material for hosting qubits and other quantum components.
In conclusion, the 6N purity DSP surface, undoped HPSI Dummy Prime Grade SiC wafer is an essential material for a wide range of applications, including high-power electronics, RF devices, optoelectronics, quantum computing, and advanced research. Its high purity, semi-insulating properties, and polished surface enable superior performance in challenging environments and contribute to advancements in both industrial and academic research.
>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.
According to the quantity.