 |
Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Model Number: | CUSTOMIZED SIZE |
Payment & Shipping Terms:
| Minimum Order Quantity: | 5pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 1-6weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
|
Detail Information |
|||
| Material: | SiC Single Crystal 4h-semi | Grade: | Test Grade |
|---|---|---|---|
| Thicnkss: | 0.35mm Or 0.5mm | Suraface: | Polished DSP |
| Application: | EPITAXIAL | Diameter: | 3INCH |
| Color: | Transparent | MPD: | <10cm-2 |
| Type: | Un-doped High Purity | Resistivity: | >1E7 O.hm |
| Highlight: | 0.35mm Silicon Carbide Wafer,4 Inch Silicon Carbide Wafer,SiC Silicon Carbide Wafer |
||
Product Description
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un-doped 4H-semi resistivity>1E7 3inch 4inch 0.35mm sic wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm |
no = 2.61 |
no = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K |
a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification
| 2inch diameter Silicon Carbide (SiC) Substrate Specification | ||||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||||
| Diameter | 100. mm±0.38mm | |||||||||
| Thickness | 350 μm±25μm or 500±25um Or other customized thickness | |||||||||
| Wafer Orientation | On axis : <0001>±0.5° for 4h-semi | |||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤10cm-2 | ≤30 cm-2 | ||||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | ||||||||
| 6H-N | 0.02~0.1 Ω•cm | |||||||||
| 4h-semi | ≥1E7 Ω·cm | |||||||||
| Primary Flat | {10-10}±5.0° | |||||||||
| Primary Flat Length | 18.5 mm±2.0 mm | |||||||||
| Secondary Flat Length | 10.0mm±2.0 mm | |||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||||||
| Edge exclusion | 1 mm | |||||||||
| TTV/Bow /Warp | ≤10μm /≤15μm /≤30μm | |||||||||
| Roughness | Polish Ra≤1 nm | |||||||||
| CMP Ra≤0.5 nm | ||||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||||
Applications:
1) III-V Nitride Deposition
2) Optoelectronic Devices
3) High-Power Devices
4) High-Temperature Devices
5) High-Frequency Power Devices
-
Power Electronics:
- High-Voltage Devices: SiC wafers are ideal for power devices that require high breakdown voltages. They are widely used in applications such as power MOSFETs and Schottky diodes, which are essential for efficient power conversion in automotive and renewable energy sectors.
- Inverters and Converters: The high thermal conductivity and efficiency of SiC enable the development of compact and efficient inverters for electric vehicles (EVs) and solar inverters.
-
RF and Microwave Devices:
- High-Frequency Amplifiers: The excellent electron mobility of SiC allows for the fabrication of high-frequency RF devices, making them suitable for telecommunications and radar systems.
- GaN on SiC Technology: Our SiC wafers can serve as substrates for GaN (Gallium Nitride) devices, enhancing performance in RF applications.
-
LED and Optoelectronic Devices:
- UV LEDs: SiC's wide bandgap makes it an excellent substrate for UV LED production, which is used in applications ranging from sterilization to curing processes.
- Laser Diodes: The superior thermal management of SiC wafers improves the performance and longevity of laser diodes used in various industrial applications.
-
High-Temperature Applications:
- Aerospace and Defense: SiC wafers can withstand extreme temperatures and harsh environments, making them suitable for aerospace applications and military electronics.
- Automotive Sensors: Their durability and performance at high temperatures make SiC wafers ideal for automotive sensors and control systems.
-
Research and Development:
- Material Science: Researchers utilize polished SiC wafers for various studies in material science, including investigations into semiconductor properties and the development of new materials.
- Device Fabrication: Our wafers are used in laboratories and R&D facilities for the fabrication of prototype devices and the exploration of advanced semiconductor technologies.
Production display show
|
4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
|
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot |
Customzied size for 2-6inch
|
SiC Applications
Application areas
- 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
- diodes, IGBT, MOSFET
- 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.