SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

  • High Light

    silicon carbide substrate

    ,

    sic wafer

  • Material
    SiC Single Crystal 4H-N Type
  • Grade
    Dummy / Research/ Production Grade
  • Thicnkss
    0.625MM
  • Suraface
    As-cut
  • Application
    Polish Device Test
  • Diameter
    50.8mm
  • Place of Origin
    CHINA
  • Brand Name
    ZMKJ
  • Model Number
    2inch*0.625mmt
  • Minimum Order Quantity
    10pcs
  • Price
    by case
  • Packaging Details
    single wafer package in 100-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    T/T, Western Union, MoneyGram
  • Supply Ability
    1-50pcs/month

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test

 

 
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

SILICON CARBIDE MATERIAL PROPERTIES

Property

4H-SiC, Single Crystal

6H-SiC, Single Crystal

Lattice Parameters

a=3.076 Å c=10.053 Å

a=3.073 Å c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Mohs Hardness

9.2

9.2

Density

3.21 g/cm3

3.21 g/cm3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index @750nm

no = 2.61 ne = 2.66

no = 2.60 ne = 2.65

Dielectric Constant

c~9.66

c~9.66

Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K

 

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K

Band-gap

3.23 eV

3.02 eV

Break-Down Electrical Field

3-5×106V/cm

3-5×106V/cm

Saturation Drift Velocity

2.0×105m/s

2.0×105m/s

4 inch n-doped 4H Silicon Carbide SiC Wafer

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test 1 2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test 2
 2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test 3

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test 4

2 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade

Production Grade

Research Grade

Dummy Grade

 Diameter

50.8 mm±0.38 mm

 Thickness

330 μm±25μm or customzied 

Wafer Orientation

On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward  1120  ±0.5° for 4H-N/4H-SI

 Micropipe Density

≤5 cm-2

≤15 cm-2

≤50 cm-2

Resistivity

4H-N

0.015~0.028 Ω·cm

6H-N

0.02~0.1 Ω·cm

4/6H-SI

>1E5 Ω·cm

(90%) >1E5 Ω·cm

 Primary Flat

{10-10}±5.0°

Primary Flat Length

15.9 mm±1.7 mm

 Secondary Flat Length

8.0 mm±1.7 mm

 Secondary Flat Orientation

Silicon face up: 90° CW. from Prime flat ±5.0°

Edge exclusion

1 mm

 TTV/Bow /Warp

≤15μm /≤25μm /≤25μm

Roughness

Polish Ra≤1 nm

CMP Ra≤0.5 nm


Cracks by high intensity light

None

None

1 allowed, ≤1 mm

Hex Plates by high intensity light

Cumulative area≤1 %

Cumulative area≤1 %

Cumulative area≤3 %


Polytype Areas by high intensity light

None

Cumulative area≤2 %

Cumulative area≤5%


Scratches by high intensity light

3 scratches to 1×wafer diameter cumulative length

5 scratches to 1×wafer diameter cumulative length

8 scratches to 1×wafer diameter cumulative length

Edge chip

None

3 allowed, ≤0.5 mm each

5 allowed, ≤1 mm each

   
 
CATALOGUE   COMMON  SIZE                             
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 
4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
 Customzied size for 2-6inch 
 

About ZMKJ Company
 
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 
Our Relation  Products 
Sapphire wafer& lens/  LiTaO3 Crystal/  SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball/ Gap wafers

2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test 5

FAQ:

Q: What's the way of shipping and cost and pay term ?

A:(1) We accept 100% T/T In advance by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 10pcs up.

 

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.