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4Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Model Number: | 4inch high purity |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1pcs |
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| Price: | 600-1500usd/pcs by FOB |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 1-6weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
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Detail Information |
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| Material: | SiC Single Crystal 4H-N Type | Grade: | Dummy / Research /Production Grade |
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| Thicnkss: | 350um Or 500um | Suraface: | CMP/MP |
| Application: | Device Maker Polishing Test | Diameter: | 100±0.3mm |
| High Light: | silicon carbide substrate,silicon on sapphire wafers |
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Product Description
High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
The 4-inch silicon carbide (SiC) substrate, made with high-purity prime dummy ultra-grade 4H-SiC wafers, is designed for advanced semiconductor applications. These wafers offer excellent electrical and thermal properties, making them ideal for high-power, high-frequency, and high-temperature devices. The 4H-SiC polytype provides a wide bandgap, high breakdown voltage, and superior thermal conductivity, allowing for efficient device performance in extreme conditions. These substrates are essential for producing high-quality, reliable semiconductors used in power electronics, renewable energy systems, and electric vehicles, where precision and durability are critical. The ultra-grade quality ensures minimal defects, supporting the growth of epitaxial layers and enhancing device fabrication processes.
PROPERTIES of 4H-SiC Single Crystal
- Lattice Parameters: a=3.073Å c=10.053Å
- Stacking Sequence: ABCB
- Mohs Hardness: ≈9.2
- Density: 3.21 g/cm3
- Therm. Expansion Coefficient: 4-5×10-6/K
- Refraction Index: no= 2.61 ne= 2.66
- Dielectric Constant: 9.6
- Thermal Conductivity: a~4.2 W/cm·K@298K
- (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
- Thermal Conductivity: a~4.9 W/cm·K@298K
- (Semi-insulating) c~3.9 W/cm·K@298K
- Band-gap: 3.23 eV Band-gap: 3.02 eV
- Break-Down Electrical Field: 3-5×10 6V/m
- Saturation Drift Velocity: 2.0×105m/
High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications
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SUBSTRATE PROPERTY |
Production Grade |
Research Grade |
Dummy Grade |
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Diameter |
100.0 mm+0.0/-0.5 mm |
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Surface Orientation |
{0001} ±0.2° |
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Primary Flat Orientation |
<11-20> ± 5.0 ̊ |
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Secondary Flat Orientation |
90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up |
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Primary Flat Length |
32.5 mm ±2.0 mm |
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Secondary Flat Length |
18.0 mm ±2.0 mm |
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Wafer Edge |
Chamfer |
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Micropipe Density |
≤5 micropipes/ cm2 |
≤10 micropipes/ cm2 |
≤50 micropipes/ cm2 |
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Polytype areas by high-intensity light |
None permitted |
≤10% area |
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Resistivity |
≥1E5 Ω·cm |
(area 75%)≥1E5 Ω·cm |
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Thickness |
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
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TTV |
≦10μm |
≦15 μm |
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Bow(absolute value) |
≦25 μm |
≦30 μm |
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Warp |
≦45 μm |
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Surface Finish |
Double Side Polish, Si Face CMP(chemical polishing) |
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Surface Roughness |
CMP Si Face Ra≤0.5 nm |
N/A |
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Cracks by high-intensity light |
None permitted |
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Edge chips/indents by diffuse lighting |
None permitted |
Qty.2 <1.0 mm width and depth |
Qty.2 <1.0 mm width and depth |
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Total usable area |
≥90% |
≥80% |
N/A |
*The other specifications can be customized according to customer’s requirements
6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications
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Property |
U(Ultra) Grade |
P(Production)Grade |
R(Research)Grade |
D(Dummy)Grade |
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Diameter |
150.0 mm±0.25 mm |
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Surface Orientation |
{0001} ± 0.2° |
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Primary Flat Orientation |
<11-20> ± 5.0 ̊ |
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Secondary flat Orientation |
N/A |
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Primary Flat Length |
47.5 mm ±1.5 mm |
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Secondary flat Length |
None |
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Wafer Edge |
Chamfer |
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Micropipe Density |
≤1 /cm2 |
≤5 /cm2 |
≤10 /cm2 |
≤50 /cm2 |
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Polytype area by High-intensity Light |
None |
≤ 10% |
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Resistivity |
≥1E7 Ω·cm |
(area 75%)≥1E7 Ω·cm |
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Thickness |
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
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TTV |
≦10 μm |
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Bow(Absolute Value) |
≦40 μm |
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Warp |
≦60 μm |
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Surface Finish |
C-face: Optical polished, Si-face: CMP |
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Roughness(10μm×10μm) |
CMP Si-face Ra<0.5 nm |
N/A |
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Crack by High-intensity Light |
None |
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Edge Chips/Indents by Diffuse Lighting |
None |
Qty≤2, the length and width of each<1mm |
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Effective Area |
≥90% |
≥80% |
N/A |
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* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
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4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
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6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot |
Customzied size for 2-6inch
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Sales & Customer Service
Materials Purchasing
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Quality
During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.
Service
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