Double Side Polish Silicon Carbide Wafer 2-6'' 4H N - Doped SiC Wafers
-
High Light
silicon carbide substrate
,silicon on sapphire wafers
-
MaterialSiC Single Crystal 4H-N Type
-
GradeDummy / Research /Production Grade
-
Thicnkss4 Customized
-
SurafaceLP/LP Or As-cut
-
ApplicationDevice Maker Polishing Test
-
Diameter150±0.5mm
-
Place of OriginCHINA
-
Brand NameZMKJ
-
Model Numbercustomzied size
-
Minimum Order Quantity1pcs
-
Price600-1500usd/pcs by FOB
-
Packaging Detailssingle wafer package in 100-grade cleaning room
-
Delivery Time1-6weeks
-
Payment TermsT/T, Western Union, MoneyGram
-
Supply Ability1-50pcs/month
Double Side Polish Silicon Carbide Wafer 2-6'' 4H N - Doped SiC Wafers
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
| 4 inch Conductive SiC Wafer Specification | ||||
| Product | 4H-SiC | |||
| Grade | Grade I | Grade II | Grade III | |
| polycrystalline areas | None permitted | None permitted | <5% | |
| polytype areas | None permitted | ≤20% | 20% ~ 50% | |
| Micropipe Density) | < 5micropipes/cm-2 | < 30micropipes/cm-2 | <100micropipes/cm-2 | |
| Total usable area | >95% | >80% | N/A | |
| Diameter | 100.0 mm +0/-0.5 mm | |||
| Thickness | 500 μm ± 25 μm or Customer Specification | |||
| Dopant | n type: nitrogen | |||
| Primary Flat Orientation) | Perpendicular to <11-20> ± 5.0° | |||
| Primary Flat Length | 32.5 mm ± 2.0 mm | |||
| Secondary Flat Orientation) | 90° CW from Primary flat ± 5.0° | |||
| Secondary Flat Length) | 18.0 mm ± 2.0 mm | |||
| On axis Wafer Orientation) | {0001} ± 0.25° | |||
| Off axis Wafer Orientation | 4.0° toward <11-20> ± 0.5° or Customer Specification | |||
| TTV/BOW/Warp | < 5μm / <10μm /< 20μm | |||
| Resistivity | 0.01~0.03 Ω×cm | |||
| Surface Finish | C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification |
Double side polish |
||
|
4H-N Type / High Purity SiC wafer
2 inch 4H N-Type SiC wafer
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
|
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer |
|
Sales & Customer Service
Materials Purchasing
The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.
Quality
During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.
Service
We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.
we are at your side by any time when you have problem,and resolve it in 10hours.
Our products are sold all over the world, you can rest assured.