1.5mm Thickness 4h-N SIC Silicon Carbide Wafer For Epitaxial

Basic Information
Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 4inch sic wafers
Minimum Order Quantity: 3pcs
Price: by case
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Material: SiC Single Crystal 4h-N Grade: Production Grade
Thicnkss: 1.5mm Suraface: Dsp
Application: Epitaxial Diameter: 4inch
Color: Green MPD: <1cm-2
High Light:

4h-N SIC Wafer


4h-N Silicon Carbide Wafer


1.5mm Silicon Carbide Wafer


Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single 

sic wafer 4Inch prime research dummy Grade 4H-N/SEMI standard size


About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.


1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

4 inch n-doped 4H Silicon Carbide SiC Wafer

4H-N  4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
Diameter 100. mm±0.5mm  
Thickness 350 μm±25μm or 500±25um Or other customized thickness   
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI  
Micropipe Density ≤0 cm-2 ≤1cm-2 ≤5cm-2 ≤10 cm-2  
Resistivity 4H-N 0.015~0.028 Ω•cm  
6H-N 0.02~0.1 Ω•cm  
4/6H-SI ≥1E5 Ω·cm  
Primary Flat {10-10}±5.0°  
Primary Flat Length 18.5 mm±2.0 mm  
Secondary Flat Length 10.0mm±2.0 mm  
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
Edge exclusion 1 mm  
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm  
Roughness Polish Ra≤1 nm  
CMP Ra≤0.5 nm  
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  


Production display show


 1.5mm Thickness  4h-N SIC Silicon Carbide Wafer For Epitaxial 11.5mm Thickness  4h-N SIC Silicon Carbide Wafer For Epitaxial 2
1.5mm Thickness  4h-N SIC Silicon Carbide Wafer For Epitaxial 3


4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 Customzied size for 2-6inch 

SiC Applications 

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

Q1. Are you a factory?
A1. Yes, we are a professional manufacturer of optical components, we have more than 8years experience in wafers and optical lens process.
Q2. What is the MOQ of your products?
A2. No MOQ for customer if our product is in stock, or 1-10pcs.
Q3:Can I custom the products based on my requirement?
A3.Yes, we can custom the material, specifications and optical coating for youroptical components as your requirement.
Q4. How can I get sample from you?
A4. Just send us your requirements, then we will sendsamples accordingly.
Q5. How many days will samples be finished? How about mass products?
A5. Generally, we need 1~2weeks to finish the sample production. As for the mass products, it depends on your order quantity.
Q6. What's the delivery time?
A6. (1)For inventory: the delivery time is 1-3 working days. (2) For customized products: the delivery time is 7 to 25 working days.
According to the quantity.
Q7. How do you control the quality?
A7. More than four times quality inspect during production process,we can provide the Quality test report.
Q8. How about your optical lens production ability per Month?
A8. About 1,000pcs/Month.According to the detail requirement.


Contact Details

Phone Number : +8615801942596

WhatsApp : +8615801942596