Silicon Carbide Wafer

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Silicon Carbide Wafer

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April 08, 2025

Category Connection: Silicon Carbide Wafer

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#silicon carbide substrate #sic wafer #silicon on sapphire wafers

Brief: Discover the High Purity Semi-Insulating HPSI SiC Powder, a 99.9999% purity material essential for power electronics, optoelectronic devices, and high-temperature applications. Learn how this advanced silicon carbide powder drives next-generation semiconductor crystal growth.

Related Product Features:

Exceptional purity of ≥ 99.9999% (6N) for high-performance applications.
Particle size ranges from 0.5 µm to 10 µm for uniform processing.
High resistivity between 10⁵ - 10⁷ Ω*cm for semi-insulating properties.
Superior thermal conductivity of ~490 W/m*K for efficient heat dissipation.
Wide bandgap of ~3.26 eV, ideal for high-power and high-frequency devices.
Extreme hardness with a Mohs rating of 9.5 for durability.
Used in Physical Vapor Transport (PVT) for SiC single crystal growth.
Customizable particle size, purity, and doping for specific needs.

Faqs:

What is HPSI silicon carbide (SiC) powder used for?

HPSI SiC powder is used in sandblasting injectors, automotive water pump seals, bearings, pump components, and extrusion dies, leveraging its high hardness, abrasion resistance, and corrosion resistance.
What is HPSI Silicon Carbide (SiC) Powder?

HPSI (High Purity Sintered) Silicon Carbide powder is a high-purity, high-density SiC material manufactured through advanced sintering processes, ideal for semiconductor and high-performance applications.
Can HPSI SiC powder be customized for specific applications?

Yes, HPSI SiC powder can be tailored in terms of particle size, purity level, and doping concentration to meet specific industrial or research requirements.
How does HPSI SiC powder directly impact semiconductor wafer quality?

Its purity, particle size, and crystal phase directly determine the quality and performance of semiconductor wafers, ensuring high efficiency and reliability in electronic devices.