logo
Good price  online

products details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Sapphire Substrate
Created with Pixso.

4 Inch Sapphire Wafer, Al2O3 Single Crystal Sapphire Substrate, SSP DSP Polished

4 Inch Sapphire Wafer, Al2O3 Single Crystal Sapphire Substrate, SSP DSP Polished

Brand Name: ZMSH
Model Number: Sapphire Wafer
MOQ: 10 PCS
Price: 10usd
Packaging Details: Vacuum Package
Payment Terms: T/T
Detail Information
Place of Origin:
China
Certification:
Rohs
Diameter:
99.5 Mm - 100.0 Mm
Poly-type:
4H
Thickness:
350 μm ± 15 μm
Edge Exclusion:
3 Mm
Roughness:
Polish Ra ≤ 1 Nm
Resistivity:
0.015 - 0.024 Ω·cm
Supply Ability:
by case
Product Description

4 Inch Sapphire Wafer, Al2O3 Single Crystal Sapphire Substrate, SSP DSP Polished

 

Product Description:

 

4 inch sapphire wafer, single crystal Al₂O₃ substrate. C-plane (0001), SSP / DSP polished, epi-ready grade. Low TTV, ultra-smooth surface, high thermal & chemical stability. Widely used for GaN epitaxy, LED, optoelectronics and optical devices. Custom thickness, orientation and PSS available. Clean packaging, stable supply.

 

Introduction of Sapphire Wafers:

 

Sapphire wafer is a single-crystal alumina (Al₂O₃) substrate. It features excellent light transmittance, high thermal conductivity, great chemical resistance and stable mechanical properties.As a mainstream substrate material, it is widely adopted for GaN epitaxy, LED chips, Micro-LED, optical windows and photoelectric sensors. Different crystal orientations including C-plane, R-plane, A-plane and M-plane are available.We supply 4-inch sapphire wafers with SSP or DSP polishing, epi-ready grade. Patterned sapphire substrate (PSS) is also optional. Custom specifications on thickness, tolerance and surface index can be supported. Stable quality and reliable delivery for semiconductor and optoelectronic manufacturers.

 

Product Parameters:

 

Grade Zero MPD Production Grade (Z Grade) Dummy Grade (D Grade)
Diameter 99.5 mm - 100.0 mm 99.5 mm - 100.0 mm
Poly-type 4H 4H
Thickness 350 μm ± 15 μm 350 μm ± 25 μm
Wafer Orientation Off axis : 4.0° toward <11-20> ± 0.5° Off axis : 4.0° toward <11-20> ± 0.5°
Micropipe ≤ 0.2 cm² ≤ 15 cm²
Resistivity 0.015 - 0.024 Ω·cm 0.015 - 0.028 Ω·cm
Primary Flat Orientation (10-10) ± 5.0° (10-10) ± 5.0°
Primary Flat Length 32.5 mm ± 2.0 mm 32.5 mm ± 2.0 mm
Secondary Flat Length 18.0 mm ± 2.0 mm 18.0 mm ± 2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW, from Prime flat ± 5.0° Silicon face up: 90° CW, from Prime flat ± 5.0°
Edge Exclusion 3 mm 3 mm
LTV / TTV / Bow / Warp ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm ≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm
Roughness Polish Ra ≤ 1 nm Polish Ra ≤ 1 nm
  CMP Ra ≤ 0.2 nm CMP Ra ≤ 0.5 nm
Edge Cracks By High Intensity Light — Cumulative length ≤ 10 mm single length ≤ 2 mm
Hex Plates By High Intensity Light Cumulative area ≤ 0.05% Cumulative area ≤ 0.1%
Polytype Areas By High Intensity Light — Cumulative area ≤ 3%
Visual Carbon Inclusions Cumulative area ≤ 0.05% Cumulative area ≤ 3%
Silicon Surface Scratches By High Intensity Light — Cumulative length ≤1 × wafer diameter
Edge Chips By High Intensity Light None permitted ≥ 0.2 mm width and depth 5 allowed, ≤ 1 mm each
Silicon Surface Contamination By High Intensity — —
Threading Screw Dislocation ≤ 500 cm² —
Packaging Multi-wafer Cassette Or Single Wafer Container Multi-wafer Cassette Or Single Wafer Container

 

4 Inch Sapphire Wafer, Al2O3 Single Crystal Sapphire Substrate, SSP DSP Polished4 Inch Sapphire Wafer, Al2O3 Single Crystal Sapphire Substrate, SSP DSP Polished

Properties and Advantages of Sapphire:

  • Excellent high-temperature resistance: With a melting point of 2050℃, it maintains structural stability without deformation at elevated temperatures. It is compatible with epitaxial growth processes above 1000℃ such as MOCVD and HVPE, and features a low thermal expansion coefficient for consistent process results.
  • Outstanding mechanical properties: Rated 9 on the Mohs hardness scale, it offers high wear and scratch resistance as well as superior mechanical strength. It is less prone to edge chipping and cracking during processing and handling, ensuring reliable yield in mass production.
  • Superior chemical stability: Resistant to acid/alkali corrosion and plasma etching at room temperature, it adapts to full semiconductor manufacturing processes including wet cleaning and dry etching, with minimal risk of impurity contamination.
  • Exceptional optical performance: It delivers high transmittance across a broad spectrum from ultraviolet to near-infrared, free of background photoluminescence interference and with high light extraction efficiency, making it suitable for various optoelectronic devices and optical window applications.
  • Mature lattice matching: Its dense single-crystal structure contains no grain boundaries. The C-plane crystal orientation is highly compatible with GaN epitaxial processes, enabling the growth of high-quality gallium nitride thin films with low dislocation density.
  • Excellent insulation performance: With intrinsically high resistivity and low dielectric loss at high frequencies, it provides effective device isolation and is an ideal insulating substrate material for RF/microwave and SOS (Silicon on Sapphire) circuits.

Applications of 4inch Sapphire Wafers:

 

4-inch single-crystal sapphire wafers balance R&D flexibility and mass-production cost-effectiveness. With outstanding properties including high temperature resistance, excellent insulation, broad-spectrum transmittance and chemical stability, they are widely used in the mass production of optoelectronic devices such as LEDs, Mini/Micro LEDs and laser diodes, as well as semiconductor fields including GaN power devices, 5G RF chips and SOS integrated circuits. They can also be processed into optical windows, sensor substrates, MEMS devices and special industrial components, and serve as a mainstream substrate specification for academic research, pilot process testing and production line transition.

 

Related Products:

8inch Sapphire Wafer DSP Al2O3 Single Crystal for LED Lighting

Name

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

Name

 

Q&A:

 

Q1: What are sapphire wafers used for?

A1: Sapphire wafers are core substrate materials for third-generation semiconductors and high-end optics. They mainly serve as epitaxial substrates for blue/green LEDs, UV LEDs, Mini/Micro LEDs and laser diodes, and are also widely applied in GaN power devices, 5G RF chips, optical windows and MEMS sensors. They are also commonly used as experimental substrates for university material research and thin film deposition tests.

 

Q2: How to choose between SSP and DSP sapphire wafers?

A2: SSP (Single-Side Polished) wafers have an epitaxial-grade mirror finish only on the front side with a lapped back side, delivering higher cost-effectiveness. They fit scenarios that only use the front side, such as conventional GaN epitaxy and single-side coating. DSP (Double-Side Polished) wafers feature mirror finishes on both sides with better flatness and parallelism, ideal for double-sided optical transmission, double-sided film deposition and backside optical inspection.

 

Q3: What is a sapphire wafer?

A3: A sapphire wafer is a single-crystal thin slice made of high-purity single-crystal α-Al₂O₃, processed through crystal orientation, multi-wire slicing, precision lapping and CMP polishing. The mainstream C-plane (0001) orientation comes in SSP and DSP versions. With properties like high temperature resistance, excellent insulation and broad-spectrum transmittance, it is a key foundational material for the semiconductor and optical industries.

 

 

About Us

ZMSH specializes in high-tech development, production, and sales of special optical glass and new crystal materials. Our products serve optical electronics, consumer electronics, and the. We offer Sapphire optical components, mobile phone lens covers, Ceramics, LT, Silicon Carbide SIC, Quartz, and semiconductor crystal wafers. With skilled expertise and cutting-edge equipment, we excel in non-standard product processing, aiming to be a leading optoelectronic materials high-tech enterprise.

Sapphire Wafer Blank High Purity Raw Sapphire Substrate For Processing 5