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6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMKJ |
| Model Number: | 2inch AlN-sapphire |
Payment & Shipping Terms:
| Minimum Order Quantity: | 5pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer container in cleaning room |
| Delivery Time: | in 30days |
| Payment Terms: | T/T, Western Union, paypal |
| Supply Ability: | 50pcs/month |
|
Detail Information |
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| Substrate: | Sapphire Wafer | Layer: | AlN Template |
|---|---|---|---|
| Layer Thickness: | 1-5um | Conductivity Type: | N/P |
| Orientation: | 0001 | Application: | High Power/high Frequency Electronic Devices |
| Application 2: | 5G Saw/BAW Devices | Silicon Thickness: | 525um/625um/725um |
| High Light: | Sapphire based AlN templates,6 Inch sapphire wafer,6 Inch AlN templates |
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Product Description
2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer
Applications of AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).
Specification
Ch
aracteristic Specification
aracteristic Specification
Other relaterd 4INCH GaN Template Specification
| GaN/ Al₂O₃ Substrates (4") 4inch | |||
| Item | Un-doped | N-type |
High-doped N-type |
| Size (mm) | Φ100.0±0.5 (4") | ||
| Substrate Structure | GaN on Sapphire(0001) | ||
| SurfaceFinished | (Standard: SSP Option: DSP) | ||
| Thickness (μm) | 4.5±0.5; 20±2;Customized | ||
| Conduction Type | Un-doped | N-type | High-doped N-type |
| Resistivity (Ω·cm)(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
| GaN Thickness Uniformity |
≤±10% (4") | ||
| Dislocation Density (cm-2) |
≤5×108 | ||
| Useable Surface Area | ＞90% | ||
| Package | Packaged in a class 100 clean room environment. | ||
| Crystal structure |
Wurtzite |
| Lattice constant (Å) | a=3.112, c=4.982 |
| Conduction band type | Direct bandgap |
| Density (g/cm3) | 3.23 |
| Surface microhardness (Knoop test) | 800 |
| Melting point (℃) | 2750 (10-100 bar in N2) |
| Thermal conductivity (W/m·K) | 320 |
| Band gap energy (eV) | 6.28 |
| Electron mobility (V·s/cm2) | 1100 |
| Electric breakdown field (MV/cm) | 11.7 |
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