High Purity 4inch N-Type Silicon Wafer for IC and Power Devices

High Purity 4inch N-Type Silicon Wafer for IC and Power Devices

Introduction of N-Type Silicon Wafer:

     An N-type Silicon Wafer is a high-purity, single-crystal silicon substrate doped with phosphorus, arsenic, or antimony atoms to introduce extra free electrons as the majority charge carriers.This doping process gives the wafer negative electrical conductivity (N-type), making it ideal for high-performance electronic, power, and photovoltaic applications.N-type silicon wafers feature high carrier mobility, low defect density, and excellent thermal stability, allowing them to perform efficiently under high voltage, high frequency, and high temperature operating conditions. They are commonly used in semiconductor devices, power electronics, solar cells, MEMS, and integrated circuits (ICs) where reliability and efficiency are critical.

How N Type Silicon wafers are Produced:

      Much like P type wafer production, creating an N type silicon wafer starts with refining raw silicon into an ultra-pure monocrystalline form. The difference lies in which impurity gets embedded to enable negative charge carriers.

Common doping techniques for N type silicon wafers include:

Phosphine gas diffusion: Exposing wafers to phosphine gas (PH3) at over 900°C evenly diffuses phosphorus atoms

Liquid phosphorus diffusion: Dripping POCl3 liquid onto wafers and heating to ~1000°C

Ion implantation: Firing phosphorus ions directly into the silicon to precisely control doping

Ion implantation often achieves the best results for N type wafers engineered for advanced electronics. Beam currents and acceleration voltages can be calibrated to generate very precise N type regions within the silicon for specialized applications.

Key Features and Advantages of N Type Silicon Wafer:

High Electrical Performance:

Doped with phosphorus (P), arsenic (As), or antimony (Sb) to create free electrons as majority carriers.

Offers lower resistivity and higher electron mobility compared with P-type wafers.

Enables faster signal transmission, lower power loss, and improved switching efficiency in semiconductor devices.

Excellent Thermal Stability:

Maintains stable electrical properties at high operating temperatures.

High thermal conductivity allows efficient heat dissipation, extending device lifetime.

Ideal for high-power and high-frequency electronic applications.

Superior Carrier Lifetime:

N-type wafers have longer minority carrier lifetimes, which reduces recombination losses.

This enhances device efficiency, particularly in solar cells and power semiconductor devices.

Low Leakage and High Reliability:

Exhibits low junction leakage current and low defect density.

Provides stable and consistent performance in harsh operating environments.

Supports long-term reliability for automotive, industrial, and renewable energy systems.

Ideal for High-Efficiency Solar and Power Applications:

N-type monocrystalline wafers are widely used in high-efficiency solar cells (e.g., TOPCon, HJT, and IBC).

Offers better light-induced degradation (LID) resistance and higher conversion efficiency than P-type wafers.

Specifications of ZMSH N Type Silicon Wafer:

Applications of N Type Silicon Wafer:

    Integrated Circuits (lCs): Widely used in the manufacturing of micoprocessors, an alog chips, and digital logic circuits.

Power Electronics: Essential for the production of power devices such as MOSFETs and lGBTs, which are crucial in energy management and conversion applications.

MEMS Devices: Used in microelectromechanical systems for sensors and actuators in automotive, medical, and consumer electronics.

Solar Cells: Employed in photovoltaic technologies, particularly in research and small-scale solar cell production.

LEDs and Optoelectronics: Utilized in the fabrication of light-emitting diodes and other optoelectronic components.

Research and Development: Commonly found in laboratories for experimental devices and technology development.

ZMSH N Type Silicon Wafer:

Ultra-Pure Silicon Dark Wafers Semiconductor / Electronic-Grade For Microfabrication

    ZMSH specializes in producing high quality polished silicon wafers for semiconductor and electronics applications. Our 100mm polished silicon wafers offer prime quality single crystal monocrystalline material with tightly controlled electrical resistivity and thickness variation specifications. This product consists of 100mm diameter silicon wafers sliced from a single crystal ingot grown using the Czochralski (CZ) method. They have been either single side polished or double side polished to achieve exceptional thickness uniformity, particle performance, surface microroughness, and flatness specifications.

Q&A:

Q: What is a silicon wafer of N type?

A: N type silicon wafers are widely used for building power devices like high voltage MOSFETs, IGBTs, rectifiers and converters. Their surplus electrons also make them suitable anywhere electron mobility is advantageous, like in specialized RF transistors, microwave components, and some sensors.

Q: Is silicon a P-type or n-type semiconductor?

A: Silicon itself is neither P-type nor N-type — it is an intrinsic semiconductor.
That means pure silicon (Si), in its natural state, has very low electrical conductivity because it contains no intentional impurities. However, by adding small amounts of dopant elements, silicon can be transformed into either P-type or N-type semiconductor material.

Q: What is the difference between N-type silicon and P-type silicon?

A: N type wafers tend to have higher resistivity than comparable P type. They also often are produced with slightly lower oxygen levels and metallic impurities. However, both P and N wafers for semiconductor device fabrication require tight control and metrology to verify all parameters are in spec.