• InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
  • InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
  • InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
  • InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP

InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: Indium Arsenide (InAs) Substrate

Payment & Shipping Terms:

Minimum Order Quantity: 25
Price: undetermined
Packaging Details: foamed plastic+carton
Delivery Time: 2-4weeks
Payment Terms: T/T
Supply Ability: 1000pcs/week
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Detail Information

Material: Indium Arsenide (InAs) Bandgap: 0.354 EV (direct Bandgap At 300 K)
Electron Mobility: > 40,000 Cm²/V·s (300 K), Enabling High-speed Electronic Devices Effective Mass: Electron Effective Mass: ~0.023 M₀ (free Electron Mass)
Lattice Constant: 6.058 Å, Well-matched With Materials Like GaSb And InGaAs Thermal Conductivity: ~0.27 W/cm·K At 300 K
Intrinsic Carrier Concentration: ~1.5 × 10¹⁶ Cm⁻³ At 300 K Refractive Index: ~3.51 (at 10 µm Wavelength)
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5inch InAs Substrate

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4inch InAs Substrate

Product Description

InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P DSP/SSP


Abstrate of Indium Arsenide (InAs) Substrates

 

Indium Arsenide (InAs) substrates are essential in the development of advanced semiconductor technologies, thanks to their unique combination of electrical and optical properties. As a III-V compound semiconductor, InAs is particularly valued for its narrow bandgap of 0.36 eV at room temperature, which allows it to operate effectively in the infrared spectrum. This makes InAs an ideal material for infrared photodetectors, where high sensitivity to infrared radiation is required. Additionally, its high electron mobility enables fast charge transport, making it crucial for high-speed electronics such as transistors and integrated circuits used in communication systems and high-frequency applications.
 

Moreover, InAs plays a key role in the emerging field of quantum technologies. Its properties allow the fabrication of quantum dots and other nanostructures, which are pivotal for the development of quantum devices, including qubits for quantum computing and quantum communication systems. The ability to integrate InAs with other materials such as InP and GaAs further enhances its versatility, leading to the creation of advanced heterostructures for optoelectronic devices like laser diodes and light-emitting diodes.

 



Properties of InAs Substrates

1. Narrow Bandgap
 

InAs has a direct bandgap of 0.354 eV at room temperature, which positions it as an excellent material for long-wavelength infrared (LWIR) detection. Its narrow bandgap enables high sensitivity in detecting low-energy photons, crucial for applications in thermal imaging and spectroscopy.
 

2. High Electron Mobility
 

One of the standout properties of InAs is its exceptional electron mobility, exceeding 40,000 cm²/V•s at room temperature. This high mobility facilitates the development of high-speed and low-power electronic devices, such as high-electron-mobility transistors (HEMTs) and terahertz oscillators.
 

3. Low Effective Mass
 

The low effective mass of electrons in InAs leads to high carrier mobility and reduced scattering, making it ideal for high-frequency applications and quantum transport studies.
 

4. Excellent Lattice Matching
 

InAs substrates exhibit good lattice matching with other III-V materials such as Gallium Antimonide (GaSb) and Indium Gallium Arsenide (InGaAs). This compatibility enables the fabrication of heterostructures and multi-junction devices, which are crucial for advanced optoelectronic applications.
 

5. Strong Infrared Response
 

InAs’s strong absorption and emission in the infrared spectrum make it an optimal material for photonic devices like lasers and detectors that operate in the 3-5 µm and 8-12 µm spectral regions.

 

 

Property Description
Bandgap 0.354 eV (direct bandgap at 300 K)
Electron Mobility > 40,000 cm²/V·s (300 K), enabling high-speed electronic devices
Effective Mass Electron effective mass: ~0.023 m₀ (free electron mass)
Lattice Constant 6.058 Å, well-matched with materials like GaSb and InGaAs
Thermal Conductivity ~0.27 W/cm·K at 300 K
Intrinsic Carrier Concentration ~1.5 × 10¹⁶ cm⁻³ at 300 K
Refractive Index ~3.51 (at 10 µm wavelength)
Infrared Response Sensitive to wavelengths in the 3–5 µm and 8–12 µm ranges
Crystal Structure Zinc blende (face-centered cubic)
Mechanical Properties Brittle and requires careful handling during processing
Thermal Expansion Coefficient ~4.6 × 10⁻⁶ /K at 300 K
Melting Point ~942 °C

 



InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 0InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 1
 



Manufacturing of InAs Substrates

 

1. Crystal Growth


InAs substrates are primarily produced using techniques such as the Czochralski (CZ) method and Vertical Gradient Freeze (VGF) method. These methods ensure high-quality single crystals with minimal defects.
 

  • Czochralski Method: In this process, a seed crystal is dipped into a molten mixture of indium and arsenic. The seed is slowly pulled and rotated, allowing the crystal to grow layer by layer.

  • Vertical Gradient Freeze: This technique involves solidifying the molten material in a controlled thermal gradient, resulting in a uniform crystal structure with fewer dislocations.

     

2. Wafer Processing
 

Once the crystal is grown, it is sliced into wafers of the desired thickness using precision cutting tools. The wafers are then polished to achieve a mirror-like surface finish, essential for device fabrication. Chemical-mechanical polishing (CMP) is often employed to remove surface imperfections and enhance flatness.
 

3. Quality Control
 

Advanced characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), and Hall effect measurements, are used to ensure the structural, electrical, and optical quality of the substrates.

 



Applications of InAs Substrates
 

1. Infrared Detectors
 

InAs substrates are extensively used in infrared photodetectors, particularly for thermal imaging and environmental monitoring. Their ability to detect long-wavelength infrared light makes them indispensable for applications in defense, astronomy, and industrial inspection.

 

2. Quantum Devices
 

InAs is a preferred material for quantum devices due to its low effective mass and high electron mobility. It is used in quantum wells and quantum dots for quantum computing, cryptography, and advanced photonic circuits.
 

3. High-Speed Electronics
 

The high electron mobility of InAs enables the development of high-speed transistors, including HEMTs and heterojunction bipolar transistors (HBTs). These devices are crucial for applications in wireless communication, radar systems, and high-frequency amplifiers.
 

4. Optoelectronics
 

InAs substrates are used in the fabrication of infrared lasers and light-emitting diodes (LEDs). These devices find applications in optical communication, remote sensing, and medical diagnostics.
 

5. Terahertz Technologies
 

InAs’s properties make it suitable for terahertz radiation sources and detectors. Terahertz technologies are increasingly used in security screening, non-destructive testing, and biomedical imaging.
 


InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 2InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 3



Q and A
 

Q:What are the advantages of InAs Substrates?
 

A: 1.High Sensitivity: InAs-based devices exhibit excellent sensitivity to infrared light, making them ideal for low-light conditions.

 

2.Versatility: InAs substrates can be integrated with various III-V materials, enabling the design of versatile and high-performance devices.

 

3.Scalability: Advances in crystal growth techniques have made it possible to produce large-diameter InAs wafers, meeting the demands of modern semiconductor fabrication.

 



some similar products to Indium Arsenide (InAs) substrates
 

1. Gallium Arsenide (GaAs) Substrates
 

  • Key Properties: Direct bandgap (1.42 eV), high electron mobility (~8,500 cm²/V·s), and excellent thermal conductivity (~0.55 W/cm·K).
     
  • Applications: Widely used in high-frequency electronics, solar cells, and optoelectronics, such as LEDs and laser diodes.
     
  • Advantages: Well-established manufacturing processes, making it cost-effective for many applications.

    InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 4

     


2. Indium Phosphide (InP) Substrates
 

  • Key Properties: Direct bandgap (1.34 eV), high electron mobility (~5,400 cm²/V·s), and excellent lattice matching with InGaAs.
  • Applications: Essential for high-speed photonic devices, optical communication systems, and quantum cascade lasers.
  • Advantages: High thermal conductivity and suitability for high-power applications.

    InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP 5

     

 

 

Tag:#InAs Substrate #Semiconductor Substrate 

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