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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

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Superconducting Thin Monocrystalline Substrate

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Superconducting Thin Monocrystalline Substrate

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

Brand Name:	ZMSH
Model Number:	GaAs substrate
MOQ:	3PCS
Price:	BY case
Packaging Details:	single wafer container under cleaning room
Payment Terms:	T/T, Western Union

Detail Information

Product Description

Detail Information

Place of Origin:

Certification:

Material:

GaAs Substrate Wafer

Size:

2inch 3inch 4inch 6inch

Growth Method:

Dopant:

Si-doped Zn-doped Undoped

TTV DDP:

TTV SSP:

Orientation:

100+/-0.1 Degree

Highlight:

Epitaxial Growth Semiconductor Substrate

P Type GaAs Wafer

GaAs Wafer Semiconductor Substrate

Product Description

VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than that of silicon, it has important applications in the manufacture of microwave devices and high-speed digital circuits. Gallium arsenide made of gallium arsenide can be made into semi-insulating high-resistance materials with resistivity of more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates and infrared detectors.

1. Application of gallium arsenide in optoelectronics

2. Application of gallium arsenide in microelectronics

3. Application of gallium arsenide in communication

4. Application of gallium arsenide in microwave

5. Application of gallium arsenide in solar cells

GaAs Wafers Specification

Type/Dopant	Semi-Insulated	P-Type/Zn	N-Type/Si	N-Type/Si
Application	Micro Eletronic	LED		Laser Diode
Growth Method	VGF
Diameter	2", 3", 4", 6"
Orientation	(100)±0.5°
Thickness (µm)	350-625um±25um
OF/IF	US EJ or Notch
Carrier Concentration	-	(0.5-5)*1019	(0.4-4)*1018	(0.4-0.25)*1018
Resistivity (ohm-cm)	>107	(1.2-9.9)*10-3	(1.2-9.9)*10-3	(1.2-9.9)*10-3
Mobility (cm2/V.S.)	>4000	50-120	>1000	>1500
Etch Pitch Density (/cm2)	<5000	<5000	<5000	<500
TTV [P/P] (µm)	<5
TTV [P/E] (µm)	<10
Warp (µm)	<10
Surface Finished	P/P, P/E, E/E

Note: Other Specifications may be available upon request

Gallium arsenide is the most important and widely used semiconductor material in compound semiconductors, and it is also the most mature and the largest compound semiconductor material in production at present.

Gallium arsenide devices that have been used are:

Microwave diode, Gunn diode, varactor diode, etc.
Microwave transistors: field effect transistor (FET), high electron mobility transistor (HEMT), heterojunction bipolar transistor (HBT), etc.
Integrated circuit: microwave monolithic integrated circuit (MMIC), ultra-high speed integrated circuit (VHSIC), etc.
Hall components, etc.
Infrared light-emitting diode (IR LED); Visible light-emitting diode (LED, used as substrate);
Laser diode (LD);
Light detector;
High-efficiency solar cell;

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth 0

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Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

products details

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

Epitaxial Growth Semiconductor Substrate

P Type GaAs Wafer

GaAs Wafer Semiconductor Substrate

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

GaAs Wafers Specification

Gallium arsenide devices that have been used are: