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3C-N Type Silicon Carbide Wafers 2inch 4inch 6inch Or 5*5 10*10mm Size Production Grade Research Grade
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
Payment & Shipping Terms:
| Delivery Time: | 2-4weeks |
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| Payment Terms: | T/T |
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Detail Information |
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| Diameter: | 5*5mm±0.2mm & 10*10mm±0.2mm 2inch 4inch 6inch | Thickness: | 350 μm±25 μm |
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| Resistivity 3C-N: | ≤0.8 MΩ•cm | Primary Flat Length: | 15.9 Mm ±1.7 Mm |
| Secondary Flat Length: | 8.0 Mm ±1.7 Mm | Edge Exclusion: | 3mm |
| TTV/Bow /Warp: | ≤2.5 μm/≤5 μm/≤15 | Roughness: | Polish Ra≤1 Nm CMP Ra≤0.2 Nm |
| Silicon Surface Scratches By High Intensity Light: | 3 Scratches To 1×wafer Diameter Cumulative Length | ||
| Highlight: | 4inch Silicon Carbide Wafers,6inch Silicon Carbide Wafers,Research Grade Silicon Carbide Wafers |
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Product Description
3C-N Type Silicon Carbide Wafers 2inch 4inch 6inch or 5*5 & 10*10mm size,production grade Research Grade
3C-N Type Silicon Carbide Wafers‘ brief
3C-N Type Silicon Carbide (SiC) Wafers are a specific variation of SiC wafers that utilize the cubic 3C polytype. Known for their exceptional thermal, electrical, and mechanical properties, these wafers are designed to meet the stringent requirements of advanced technologies in electronics, optoelectronics, and power devices.
The 3C polytype features a cubic crystal structure, offering several advantages over hexagonal polytypes like 4H-SiC and 6H-SiC. One key benefit of 3C-SiC is its higher electron mobility, which makes it ideal for high-frequency applications and power electronics where fast switching and low energy loss are critical. Additionally, 3C-N SiC wafers have a lower bandgap (around 2.36 eV), which still allows them to handle high power and voltage efficiently.
These wafers are available in standard sizes such as 5x5mm and 10x10mm, with a thickness of 350 μm ± 25 μm, ensuring precise compatibility for various device fabrication processes. They are well-suited for use in high-power and high-frequency devices, such as MOSFETs, Schottky diodes, and other semiconductor components, offering reliable performance under extreme conditions.
The thermal conductivity of 3C-N SiC wafers enables efficient heat dissipation, a crucial feature for devices operating at high power densities. Moreover, their mechanical strength and resistance to thermal and chemical stress make them durable in challenging environments, further enhancing their application in power electronics, AR technologies, and high-temperature sensors.
In summary, 3C-N Type SiC wafers combine superior electronic, thermal, and mechanical characteristics, making them essential for next-generation electronic devices and high-performance applications.
3C-N Type Silicon Carbide Wafers‘ photos
3C-N Type Silicon Carbide Wafers‘ properties
Crystal Structure:
Cubic (3C) polytype structure, offering higher electron mobility compared to hexagonal SiC polytypes like 4H-SiC and 6H-SiC, making it suitable for high-frequency applications.
Size Options:
Available in 5x5mm and 10x10mm dimensions, providing flexibility for various applications.
Thickness:
Precision-controlled thickness of 350 μm ± 25 μm, ensuring mechanical stability and compatibility with a wide range of fabrication processes.
High Electron Mobility:
The cubic crystal structure results in improved electron transport, making it advantageous for high-speed and low-energy-loss applications in power electronics and RF devices.
Thermal Conductivity:
Excellent thermal conductivity allows for efficient heat dissipation, crucial for devices operating at high power densities, helping prevent overheating and increasing device longevity.
Bandgap:
A lower bandgap of around 2.36 eV, suitable for high-voltage and high-power applications while maintaining efficient operation in extreme environments.
Mechanical Strength:
3C-N SiC wafers exhibit high mechanical durability, offering resistance to wear and deformation, ensuring long-term reliability in harsh conditions.
Optical Transparency:
Good optical properties, particularly for optoelectronic applications such as LEDs and photodetectors, thanks to its transparency to certain wavelengths.
Chemical and Thermal Stability:
Highly resistant to thermal and chemical stress, making it suitable for use in extreme environments such as high-temperature electronics and sensors.
These properties make 3C-N SiC wafers ideal for a wide range of advanced applications, including power electronics, high-frequency devices, optoelectronics, and sensors.
3C-N Type Silicon Carbide Wafers‘ data chart
晶格领域 2 英寸 SiC 晶片产品标准
2 inch diameter Silicon Carbide (SiC) Substrate Specification
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等级 Grade |
工业级 Production Grade (P Grade) |
研究级 Research Grade (R Grade) |
试片级 Dummy Grade (D Grade) |
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| 直径 Diameter | 50.8mm±0.38mm | |||||
| 厚度 Thickness | 350 μm±25 μm | |||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [112 | 0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 Micropipe Density | 0 cm-2 | |||||
| 电阻率 ※Resistivity | 4H/6H-P | ≤0.1 Ω.cm | ||||
| 3C-N | ≤0.8 mΩ•cm | |||||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | ||||
| 3C-N | {1-10} ±5.0° | |||||
| 主定位边长度 Primary Flat Length | 15.9 mm ±1.7 mm | |||||
| 次定位边长度 Secondary Flat Length | 8.0 mm ±1.7 mm | |||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||
| 边缘去除 Edge Exclusion | 3 mm | 3 mm | ||||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | |||||
| 表面粗糙度※ Roughness | Polish Ra≤1 nm | |||||
| CMP Ra≤0.2 nm | ||||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | 1 allowed, ≤1 mm | ||||
| 六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % | ||||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% | |||
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Si 面划痕(强光灯观测)# Silicon Surface Scratches By High Intensity Light |
3 scratches to 1×wafer diameter cumulative length |
5 scratches to 1×wafer diameter cumulative length |
8 scratches to 1×wafer diameter cumulative length | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||
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硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity |
None | |||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | |||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
3C-N Type Silicon Carbide Wafers‘ applications
Applications of 3C-N Type Silicon Carbide (SiC) Wafers in the Semiconductor and Microelectronics Industry
3C-N Type Silicon Carbide wafers play a crucial role in the semiconductor and microelectronics industries, offering unique properties that enhance the performance and efficiency of various devices.
Power Electronics:
In power electronics, 3C-N SiC wafers are widely used in high-power devices such as MOSFETs, Schottky diodes, and power transistors. Their high thermal conductivity and electron mobility allow these devices to operate efficiently at high voltages and temperatures while minimizing energy losses. This makes 3C-N SiC ideal for use in power conversion systems, electric vehicles (EVs), and renewable energy systems, where efficient energy management is crucial.
High-Frequency Devices:
The excellent electron mobility of 3C-N SiC wafers makes them suitable for radio frequency (RF) and microwave applications, such as amplifiers, oscillators, and filters. These wafers enable devices to operate at higher frequencies with lower signal loss, improving the performance of wireless communication systems, satellite technology, and radar systems.
High-Temperature Electronics:
3C-N SiC wafers are also used in semiconductor devices that operate in extreme environments, such as high-temperature sensors and actuators. The material’s mechanical strength, chemical stability, and thermal resistance allow these devices to perform reliably in industries like aerospace, automotive, and oil & gas, where devices must withstand harsh operating conditions.
Microelectromechanical Systems (MEMS):
In the microelectronics industry, 3C-N SiC wafers are employed in MEMS devices, which require materials with high mechanical strength and thermal stability. These devices include pressure sensors, accelerometers, and gyroscopes, which benefit from SiC’s durability and performance under varying temperatures and mechanical stress.
Optoelectronics:
3C-N SiC wafers are also used in LEDs, photodetectors, and other optoelectronic devices due to their optical transparency and ability to handle high power, providing efficient light emission and detection capabilities.
In summary, 3C-N Type SiC wafers are essential in the semiconductor and microelectronics industries, particularly in applications requiring high performance, durability, and efficiency in extreme conditions.