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SIC Square Substrate 5×5 10×10 350um Off Axis: 2.0°-4.0° Toward Production Grade
Product Details:
| Brand Name: | ZMSH |
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Detail Information |
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| Highlight: | Toward Production grade SIC square substrate,10×10 SIC square substrate,350um SIC square substrate |
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Product Description
SIC square substrate 5×5 10×10 350um Off axis: 2.0°-4.0°toward Production grade
SIC square substrate's abstract
Silicon carbide (SiC) square substrates are critical materials in advanced semiconductor devices, particularly in high-power and high-frequency applications. SiC's superior thermal conductivity, high breakdown voltage, and wide bandgap make it an ideal choice for next-generation power electronics, especially in harsh environments. The square shape of these substrates facilitates efficient use in device fabrication and ensures compatibility with various processing equipment. Furthermore, SiC substrates with off-axis angles ranging from 2.0° to 4.0° are widely used to improve epitaxial layer quality by reducing defects such as micropipes and dislocations. These substrates also play a pivotal role in developing high-performance diodes, transistors, and other electronic components where high efficiency and reliability are paramount. As demand for energy-efficient systems continues to grow, SiC square substrates offer promising solutions in sectors such as electric vehicles, renewable energy, and telecommunications. Ongoing research focuses on optimizing the production of SiC substrates to reduce costs and enhance material performance. This abstract outlines the importance of SiC square substrates and highlights their role in advancing modern semiconductor technologies.
SIC square substrate's properties
The properties of a silicon carbide (SiC) square substrate are critical to its performance in semiconductor applications. Key properties include:
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Wide Bandgap (3.26 eV): SiC has a much wider bandgap than silicon, allowing it to operate at higher temperatures, voltages, and frequencies without degrading performance.
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High Thermal Conductivity (3.7 W/cm·K): SiC's excellent thermal conductivity enables effective heat dissipation, making it ideal for high-power applications.
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High Breakdown Electric Field (3 MV/cm): SiC can withstand higher electric fields than silicon, which is crucial for high-voltage devices, reducing the risk of breakdown and improving efficiency.
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High Electron Mobility (950 cm²/V·s): Although slightly lower than silicon, SiC still offers good electron mobility, enabling faster switching speeds in electronic devices.
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Mechanical Hardness: SiC is an extremely hard material with a Mohs hardness of about 9.5, making it highly resistant to wear and capable of maintaining structural integrity under extreme conditions.
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Chemical Stability: SiC is chemically inert, resistant to oxidation, and corrosion, making it suitable for harsh chemical and environmental conditions.
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Off-Axis Angle: Many SiC substrates have an off-axis cut (e.g., 2.0°-4.0°) to improve epitaxial layer growth, reducing defects like micropipes and dislocations in the crystal structure.
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Low Defect Density: High-quality SiC substrates have a low density of crystal defects, enhancing the performance and reliability of electronic devices.
These properties make SiC square substrates ideal for applications in power electronics, electric vehicles, telecommunications, and renewable energy systems, where high efficiency and durability are essential.
| The main performance parameters | |
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Product Name
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Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
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Growth method
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MOCVD
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Crystal Structure
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6H, 4H
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Lattice Parameters
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6H(a=3.073 Å c=15.117 Å),
4H(a=3.076 Å c=10.053 Å ) |
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Stacking Sequence
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6H: ABCACB,
4H: ABCB |
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Grade
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Production Grade, Research Grade, Dummy Grade
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Conductivity type
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N-type or Semi-Insulating |
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Band-gap
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3.23 eV
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Hardness
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9.2(mohs)
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Thermal Conductivity @300K
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3.2~4.9 W/ cm.K
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Dielectric constants
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e(11)=e(22)=9.66 e(33)=10.33
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Resistivity
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4H-SiC-N: 0.015~0.028 Ω·cm, 6H-SiC-N: 0.02~0.1 Ω·cm, 4H/6H-SiC-SI: >1E7 Ω·cm |
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Packing
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Class 100 clean bag, in class 1000 clean room
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SIC square substrate's real photos
SIC square substrate's real applications
Silicon carbide (SiC) square substrates have found real-world applications across various high-tech industries, primarily due to their exceptional thermal, electrical, and mechanical properties. Some of the key applications include:
1. Power Electronics:
- High-Power Devices: SiC square substrates are used in manufacturing high-power devices like MOSFETs, IGBTs, and Schottky diodes. These devices are essential in power conversion and management systems, particularly in areas where high efficiency, reliability, and performance are critical, such as in industrial power supplies and solar inverters.
- Electric Vehicles (EVs): SiC-based power electronics are increasingly being adopted in electric vehicle (EV) drive systems, including onboard chargers, inverters, and powertrain components. The improved efficiency and reduced heat generation allow for lighter, more compact systems with better energy usage.
2. Renewable Energy:
- Solar Inverters: SiC substrates improve the performance of solar inverters by enabling more efficient energy conversion from DC to AC, which is vital for optimizing the output of solar power systems.
- Wind Turbines: SiC-based power modules are utilized in wind turbines to manage power conversion, ensuring efficient and reliable operation even under high-stress conditions.
3. Telecommunications:
- 5G Infrastructure: SiC substrates are used in high-frequency, high-power RF devices that support the deployment of 5G networks. Their ability to handle high frequencies without significant losses makes them ideal for the next generation of communication systems.
4. Aerospace and Defense:
- Radar Systems: SiC substrates are employed in advanced radar systems, where high-frequency operation and power handling capabilities are crucial. The material's robustness also ensures performance in extreme temperatures and harsh environments.
- Satellite and Space Applications: The thermal stability and radiation resistance of SiC make it suitable for satellites and other space applications, where materials are subjected to extreme conditions.
5. Industrial Applications:
- Motor Drives: SiC substrates are integrated into motor drives for industrial machinery, improving efficiency and reducing energy consumption, particularly in high-demand applications like robotics and automation.
- HVAC Systems: SiC-based power electronics are also used in HVAC systems to increase energy efficiency and reduce operating costs.
6. Medical Equipment:
- Imaging and Diagnostic Tools: SiC substrates contribute to the high-performance needs of advanced medical imaging equipment, such as MRI machines and CT scanners, by enabling precise and efficient power management.
7. Rail Transportation:
- Electric Trains: SiC technology is used in the traction systems of electric trains, where the need for compact, efficient power systems that can handle high loads is crucial. SiC-based inverters and converters contribute to more energy-efficient and faster trains.
These applications demonstrate the versatility and impact of SiC square substrates in enabling high-performance, energy-efficient solutions across diverse industries.
Q&A
Q: What are SiC substrates?
A:Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap.