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Sapphire Wafer 6inch DSP SSP C-plane(0001) 99,999% High Purity Monocrystalline Al2O3 LED
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | Sapphire subatrate |
Payment & Shipping Terms:
| Delivery Time: | 2-4weeks |
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| Payment Terms: | T/T |
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Detail Information |
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| Molecular Weight: | 101.96 | Layer Thickness: | 1-5um |
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| Intrinsic Resistivity: | 1E16 Ω-cm | Polishing: | DSP, SSP |
| Refractive Index: | Typically Around 1.76 (at 589 Nm) | Chemical Stability: | Excellent |
| Surface Roughness: | Ra < 0.5 Nm | Diameter Tolerance: | ≤3% |
| High Light: | LED Sapphire Wafer,6inch Sapphire Wafer,High Purity Sapphire Wafer |
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Product Description
Sapphire Wafer 6inch DSP SSP C-plane(0001) 99,999% High Purity Monocrystalline Al2O3 LED
Product Description of 6inch Sapphire Wafer:
Sapphire wafers are a type of mineral with characteristics such as high hardness (9.0 Mohs), good transparency, and chemical stability. Sapphire wafers can be classified into two categories: natural sapphire and synthetic sapphire. Synthetic sapphire wafers are produced through chemical reactions under high-temperature and high-pressure conditions. They can yield more uniform sapphire wafers at a relatively lower cost, making them widely used in industrial production. Different synthesis methods and conditions can produce sapphire wafers in various colors and forms, such as golden yellow, pink, etc.
The character of 6inch Sapphire Wafer:
1. Wear-resistant
2. High-temperature resistant
3. Acid and alkali resistant
4. High transparency
5. Good heat dissipation
Parameter table of 6inch Sapphire Wafer:
| Item | 6-inch C-plane(0001) 1300μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 150.0 mm +/- 0.2 mm | |
| Thickness | 1300 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 47.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 25 μm | |
| BOW | < 25 μm | |
| WARP | < 25 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Physical photo of 6inch Sapphire Wafer:
Applicationsof 6inch Sapphire Wafer:
1.The application of C- plane sapphire wafers
Compared to sapphire substrates with other crystal orientations, C-plane (<0001> orientation) sapphire wafers exhibit a relatively smaller lattice constant mismatch with III-V and II-VI group materials (such as GaN). Additionally, the lattice constant mismatch between both of them and the AlN thin film that can serve as a buffer layer is even smaller. This characteristic makes C-plane sapphire wafers a commonly used substrate material in GaN growth processes.
Due to their ability to meet the high-temperature requirements in GaN epitaxy processes, C-plane sapphire wafers are ideal for the production of white/blue/green light-emitting diodes (LEDs), laser diodes, infrared detectors, and other devices.
2. The application of A- plane sapphire wafers
Due to its outstanding overall performance, especially its excellent transparency enhancing the penetration of infrared light, sapphire monocrystals have become the ideal mid-infrared window material and are widely utilized in military electro-optical devices. In this context, A-plane sapphire represents a non-polar face perpendicular to the polar surface (C-plane). Typically, sapphire crystals grown in the a-direction exhibit superior quality compared to those grown in the c-direction, showcasing fewer defects, fewer twinning structures, and a more complete crystal structure. As a result, a-direction sapphire wafers offer better light transmission properties.
Moreover, due to the atomic bonding arrangement of Al-O-Al-O on the A-plane, a-direction sapphire boasts significantly higher hardness and wear resistance compared to c-direction sapphire. Consequently, A-plane wafers are mainly used as window materials. Additionally, A-plane sapphire also features uniform dielectric constants and high insulation characteristics, making it suitable for applications in mixed microelectronics technology. It can also be used in high-temperature superconductor growth processes, such as the growth of heteroepitaxial superconducting films using materials like TlBaCaCuO (TbBaCaCuO) on composite substrates of sapphire and cerium oxide (CeO2).
3. The application of R- plane and M-plane sapphire wafers
The R-plane of sapphire is a non-polar face, and therefore, variations in the position of the R-plane in sapphire devices result in different mechanical, thermal, electrical, and optical properties. Generally, R-plane sapphire substrates are preferred for heteroepitaxial deposition with silicon and are primarily used in the manufacturing of semiconductors, microwave and microelectronic integrated circuit applications. R-plane sapphire substrates are also employed in the production of ruby balls, other superconducting components, high-resistance resistors, and gallium arsenide.
With the widespread use of smartphones, tablet systems, and other devices, R-plane sapphire substrates have replaced existing compound surface acoustic wave (SAW) devices used in smartphones and tablets. They serve as substrates for devices that can enhance performance, providing an improved base for various applications.
The application picture of 6inch Sapphire Wafer:
Customization:
ZMSH can provide sapphire wafers with any crystal orientation, such as C-plane, A-plane, R-plane, M-plane, and more.
A-plane Sapphire Wafers: These wafers exhibit uniform dielectric constants and high insulation properties, making them widely used in the field of mixed microelectronics.
M-plane Sapphire Wafers: The application prospects of sapphire in near-ultraviolet detection have led to increasing interest in wide-bandgap MgZnO alloy semiconductor thin films.
R-plane Sapphire Wafers: R-plane (1-102) sapphire wafers are preferred materials for epitaxial deposition of silicon in microelectronic IC applications. The R-plane is a non-polar face of sapphire.
In addition to standard sizes and crystal orientations, various off-angles and whether to include orientation flats are also offered to maximize flexibility for customers in research or business applications. All sapphire wafers are cleaned and packaged in Class 100 cleanrooms and are directly applicable for epitaxial growth (Epi-ready grade) to meet customers' stringent epitaxial growth requirements.Whether with polished or unpolished surfaces, with or without orientation flats, we can customize production according to your specific needs to meet various requirements in your research field.
6inch Sapphire Wafer's Customized Picture:
FAQ:
1. Q: What size are sapphire wafers?
A: Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants.
2. Q: Why use sapphire substrate?
A:Sapphire has exceptional electrical insulation, transparency, good thermal conductivity, and high rigidity properties. Hence it is an ideal material for substrates and is used in LED and microelectronic circuits, ultra-high-speed integrated circuits.
3. Q:Why are bigger wafers better?
A: Increasing the wafer size means a larger surface area for each solar cell. This allows more sunlight to be captured and converted into electricity, resulting in higher power output per cell and module. Larger wafers can significantly boost the overall energy production of solar installations.
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