• 4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization
  • 4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization
  • 4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization
4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization

4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: Silicon Carbide

Payment & Shipping Terms:

Delivery Time: 2-4weeks
Payment Terms: T/T
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Detail Information
Bow/Warp: ≤40um Grade: Production/ Research/ Dummy
EPD: ≤1E10/cm2 Resistivity: High/Low Resistivity
Impurity: Free/Low Impurity Surface Roughness: ≤1.2nm
TTV: ≤15um Type: 4H-N/4H-SEMI
Highlight:

On-Axis Silicon Carbide Wafer

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4H Silicon Carbide Wafer

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4inch Silicon Carbide Wafer

Product Description

4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization

Product Description:

 

Silicon carbide wafer is mainly used in the production of Schottky diode, metal oxide semiconductor field effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, turn-off thyristors, and insulated gate bipolar transistors. Silicon Carbide Wafer features high/low resistivity, ensuring that it delivers the performance you need, no matter your application's requirements. Whether you're working with high-power electronics or low-power sensors, our wafer is up to the task. So if you're looking for a top-quality Silicon Carbide Wafer that delivers exceptional performance and reliability, look no further than our product. We guarantee that you won't be disappointed with its quality or performance. 

 

Grade Zero MPDGrade Production Grade Dummy Grade
Diameter 100.0 mm +/- 0.5 mm
Thickness 4H-N 350 um +/- 20 um 350 um +/- 25 um
4H-SI 500 um +/- 20 um 500 um +/- 25 um
Wafer Orientation On axis: <0001> +/- 0.5 deg for 4H-SI
Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
Electrical Resistivity 4H-N 0.015~0.025 0.015~0.028
(Ohm-cm) 4H-SI >1E9 >1E5
Primary Flat Orientation {10-10} +/- 5.0 deg
Primary Flat Length 32.5 mm +/- 2.0 mm
Secondary Flat Length 18.0 mm +/- 2.0 mm
Secondary Flat Orientation Silicon face up: 90 deg CW from Primary flat +/- 5.0 deg
Edge exclusion 3 mm
LTV/TTV /Bow /Warp 3um /5um /15um /30um 10um /15um /25um /40um
Surface Roughness Polish Ra < 1 nm on the C face
CMP Ra < 0.2 nm Ra < 0.5 nm
Cracks inspected by high intensity light None None 1 allowed, 2 mm
Hex Plates inspected by high intensity light Cumulative area ≤0.05% Cumulative area ≤0.1 %
Polytype Areas inspected by high intensity light None None Cumulative area≤3%
Scratches inspected by high intensity light None None Cumulative length≤1x wafer diameter
Edge chipping None None 5 allowed, ≤1 mm each
Surface Contamination as inspected by high intensity light None
4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization 0

 

Character:

 

1. Strong High-Temperature Stability: Silicon carbide wafers exhibit extremely high thermal conductivity and chemical inertness, allowing them to maintain stability in high-temperature environments without easily experiencing thermal expansion and deformation.
2. High Mechanical Strength: Silicon carbide wafers have high rigidity and hardness, enabling them to withstand high stresses and heavy loads.
3. Excellent Electrical Properties: Silicon carbide wafers have superior electrical properties compared to silicon materials, with high electrical conductivity and electron mobility.
4. Outstanding Optical Performance: Silicon carbide wafers possess good transparency and strong radiation resistance.

 

Silicon carbide single crystal growth:

Challenges in SiC single crystal growth:SiC exists in over 220 crystal structures, with the most common being 3C (cubic), 2H, 4H, and 6H (hexagonal), and 15R (rhombohedral). SiC lacks a melting point, making it unsuitable for growth via methods like the Czochralski process.It sublimes above 1800°C, decomposing into gaseous Si, Si2C, SiC, and solid C (the primary component).The growth mechanism involving silicon-carbon bilayer spirals leads to the formation of crystal defects during the growth process.

1: Physical Vapor Transport (PVT) Method:

In PVT growth of SiC, SiC powder is placed at the bottom of a furnace and heated. When the temperature reaches 2000-2500°C, the powder undergoes high-temperature decomposition into a gas. Due to the higher temperature at the bottom and lower temperature at the top of the crucible, the vapor condenses and grows along the seed crystal's direction, eventually forming SiC crystals.

Advantage: PVT equipment is currently the mainstream method for growing SiC crystals due to its easy structure and operation. Disadvantaged:  However, this method also has limitations: it is relatively difficult to achieve diameter expansion in SiC crystal growth. For example, if you have a 4-inch crystal and want to expand it to 6 or 8 inches, it would require a significantly long period. The advantages of doping SiC crystals are not very pronounced using this method.

2: High-Temperature Solution Method:

This method relies on a solvent to dissolve the carbon element. The solvent's ability to dissolve the solute varies at different temperatures. When growing SiC crystals using this method, the solvent used is the metallic material chromium (Cr). Although metals are solid at room temperature, they melt into a liquid at high temperatures, effectively becoming a solution. SiC and Cr are placed in a graphite crucible, where Cr acts as a shuttle, transporting the carbon element from the bottom of the furnace to the top, where it cools and crystallizes to form crystals.

Advantage:The advantages of growing SiC using the High-Temperature Solution Method include low dislocation density, which has been a key issue restricting the performance of SiC devices; ease of achieving diameter expansion; and obtaining p-type crystals. Disadvantaged:   However, this method also has some drawbacks, such as the sublimation of the solvent at high temperatures, controlling impurity concentration during crystal growth, solvent encapsulation, and floating crystal formation.

3: High Temperature Chemical Vapor Deposition (HTCVD) Method:

This method differs significantly from the previous two methods in that the raw material for SiC changes. While SiC powder is used as the raw material for growing SiC crystals in the earlier methods, HTCVD uses organic gases containing C and Si elements as the SiC raw material. In HTCVD, gases are introduced into the furnace through a pipeline, where they react and form SiC crystals. Currently, HTCVD for SiC crystal growth is still in the research and development stage. Due to the complexity and high cost of this process, it is not the mainstream technology for growing SiC crystals at present.

4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization 1

Applications:

1. Inverters, DC-DC Converters, and Onboard Chargers for Electric Vehicles: These applications require a large number of power modules. Compared to silicon-based solutions, silicon carbide devices bring about a significant increase in driving range and reduction in charging time for electric vehicles.
2. Silicon Carbide Power Devices for Renewable Energy Applications: Silicon carbide power devices used in inverters for solar and wind energy applications enhance energy utilization, providing more efficient solutions for carbon peaking and carbon neutrality.
3. High-Voltage Applications like High-Speed Rail, Metro Systems, and Power Grids: Systems in these fields demand high voltage tolerance, safety, and operational efficiency. Power devices based on silicon carbide epitaxy are the optimal choice for the aforementioned applications.
4. High-Power RF Devices for 5G Communication: These devices for the 5G communication sector require substrates with high thermal conductivity and insulation properties. This facilitates the realization of superior GaN epitaxial structures.

 

4H N Type Semi Type SiC Wafer 4inch DSP Production Research Dummy Grade Customization 2

FAQ:

Q: What is the difference between 4H-SiC and SiC?
A: 4H-Silicon Carbide (4H-SiC) stands out as a superior polytype of SiC due to its wide bandgap, excellent thermal stability, and remarkable electrical and mechanical characteristics.

Q: When should SiC be used?
A: If you want to quote someone or something in your work, and you notice the source material contains a spelling or grammatical error, you use sic to denote the error by placing it right after the mistake.

Q: Why 4H SiC?
A: 4H-SiC is preferred over 6H-SiC for most electronics applications because it has a higher and more isotropic electron mobility than 6H-

Tag:

silicon carbide substrate

sic wafer

silicon on sapphire wafers

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