High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics

High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics

Product Details:

Place of Origin: China
Brand Name: ZMSH
Certification: ROHS
Model Number: 4INCH*0.5mmt

Payment & Shipping Terms:

Minimum Order Quantity: 25pcs
Price: by case
Packaging Details: in 25pcs cassette wafer box under 100grade cleaning room
Delivery Time: 1 weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1000pcs per month
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Detail Information

Material: Sapphire Single Crystal Al2O3 99.999% Orientation: C-AXIS/A-AXIS/M-AXIS/M-AXIS
Surface: SSP DSP Or Grinding Thickness: 0.25mm, 0.5mm Or 0.43mm
Application: Led Or Optical Glass Growth Method: Ky
SIZE: 4inch DIA100mm Package: 25/Cassette
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High Hardness 4Inch Sapphire Substrate


Leds Laser Diodes Sapphire Wafer


Optoelectronics Sapphire Wafer

Product Description

4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3

Application of 4inch sapphire wafer substrates

4-inch sapphire wafer is widely used in LED, laser diode, optoelectronic devices, semiconductor devices, and other fields. The high light transmittance and high hardness of sapphire wafers make them ideal substrate materials for manufacturing high-brightness and high-power LEDs. In addition, sapphire wafers can also be used to manufacture optical Windows, mechanical components, and so on.

Sapphire Properties

Chemical formula Al2O3
Density 3.97 g/cm3
Hardness 9 Mohs
Melting point 2050oC
Max. use temperature 1800-1900oC
Tensile strength 250-400 MPa
Compressive strength 2000 MPa
Poisson's ratio 0.25-0.30
Young's Modulus 350-400 GPa
Bending strength 450-860 MPa
Rapture Modulus 350-690 MPa
Linear expansion rate (at 293-323 K) 5.0*10-6K-1(⊥ C)
6.6*10-6K-1(∥ C)
Thermal conductivity (at 298 K) 30.3 W/(m*K)(⊥ C)
32.5 W/(m*K)(∥ C)
Specific heat (at 298 K) 0.10 cal*g-1
Resistivity (at 298 K) 5.0*1018 Ω*cm(⊥ C)
1.3-2.9*1019 Ω*cm(∥ C)
Dielectric constant (at 298 K, in 103-109 Hz interval) 9.3 (⊥ C)
11.5 (∥ C)



Production process:

The production process for sapphire wafers usually includes the following steps:


  • Sapphire single crystal material with high purity is selected.

  • Cut sapphire single crystal material into crystals of appropriate size.

  • The crystal is processed into wafer shape by high temperature and pressure.

  • Precision grinding and polishing is performed many times to obtain high quality surface finish and flatness

High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics 0

Specifications of 4inch sapphire wafer substrate carrier

Specs 2 inch 4 inch 6 inch 8inch
Dia 50.8 ± 0.1 mm 100 ± 0.1 mm 150 ± 0.1 mm 200 ± 0.1 mm
Thick 430 ± 25 um 650 ± 25 um 1300 ± 25 um 1300 ± 25 um
Ra Ra ≤ 0.3 nm Ra ≤ 0.3nm Ra ≤ 0.3nm Ra ≤ 0.3 nm
TTV ≤ 10um ≤ 10um ≤ 10um ≤ 10um
Tolerance ≤ 3 um ≤ 3 um ≤ 3 um ≤ 3 um
Quality surface 20/10 20/10 20/10 20/10
Surface state DSP SSP Grinding
Shape Circle with notch or flatness
Chamfer 45°,C Shape
Material Al2O3 99.999%
N/O Sapphire wafer


The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" in diameter are available.

A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.

C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.

R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.


Standard wafer

2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer

Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS


 DSP C-AXIS  0.1mm/0.175mm/0.2mm/0.3mm/0.4mm

/0.5mm/  1.0mmt  

 SSP C-axis  0.2/0.43mm

(DSP&SSP) A-axis/M-axis/R-axis 0.43mm 




DSP/ SSP C-axis 0.43mm/0.5mm  




dsp   c-axis 0.4mm/ 0.5mm/1.0mm

ssp  c-axis  0.5mm/0.65mm/1.0mmt




 ssp c-axis  1.0mm/1.3mmm


dsp c-axis  0.65mm/ 0.8mm/1.0mmt 



101.6mm 4inch Sapphire wafer sapphire Details

High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics 1High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics 2High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics 3High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics 4

Other related sapphire products

Similar products:

In addition to 4-inch sapphire wafers, there are other sizes and shapes of sapphire wafers to choose from, such as 2-inch, 3-inch, 6-inch or even larger sapphire wafers. In addition, there are other materials that can be used to manufacture leds and semiconductor devices, such as aluminum nitride (AlN) and silicon carbide (SiC).

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