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2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial

2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial

Products - Silicon Carbide Wafer
  • Material
    SiC Single Crystal
  • Hardness
    9.4
  • Shape
    Customized
  • Tolerance
    ±0.1mm
  • Application
    Seed Wafer, Reflector
  • Type
    4h-n
  • Diameter
    4inch 6inch 8inch
  • Thickness
    5-15mm Ok
  • Resistivity
    0.015~0.028ohm.cm
  • Color
    Tea-green Color
  • Place of Origin
    CHINA
  • Brand Name
    ZMKJ
  • Model Number
    4inch SiC Bulks
  • Minimum Order Quantity
    3pcs
  • Price
    by case
  • Packaging Details
    single wafer package in 100-grade cleaning room
  • Delivery Time
    2-5weeks
  • Payment Terms
    T/T, Western Union, MoneyGram
  • Supply Ability
    1-50pcs/month

2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial

  • 2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial
  • 2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial
  • 2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial
  • 2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial
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High Quality Silicon-on-Insulator Wafers SIC Silicon Carbide Wafers Customized High quality high precision Dia.700mm Sic spherical Mirror metal optical reflector Customized High quality Dia.500mm silver-plated spherical reflector metal optical reflector 2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers,

 

Products Description  

2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial 0

Product Name
Metal Plane Mirror
Material
Monocrystalline Silicon
Diameter
500mm
Surface Quality
60-40
Surface Accuracy

PV:1/4 Lambda;

RMS:1/30 Lambda
Coating

Reflectivity>90%

Coating Film:@200-1100nm
Application
Reflecting System
 
Description of SIC Wafer
 
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

  
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

Catalog Commen Size
 

 

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
Customzied size for 2-6inch
 

 

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the
important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power
LEDs.

 

 

Properties unit Silicon SiC GaN
Bandgap width eV 1.12 3.26 3.41
Breakdown field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift valocity 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3

 

 

 

About  SiC seed crystal ingot detail
2 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial 12 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial 22 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial 32 3 4 6inch Sic Wafer Silicon Carbide 4H-N/Semi Type SiC Ingots Industrial 4

About ZMKJ Company

 

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

 

Q: How to pay?

A: T/T 100％ deposit before delivery.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

 

Tags:

silicon carbide substrate

sic wafer

silicon on sapphire wafers

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