Product Overview

Ti/Cu metal-coated silicon wafers are fabricated by depositing a titanium (Ti) adhesion layer followed by a copper (Cu) conductive layer on high-quality substrates using standard magnetron sputtering. The Ti layer enhances film adhesion and interfacial stability, while the Cu layer provides excellent electrical conductivity. Multiple wafer sizes, conductivity types, orientations, resistivity ranges, and film thicknesses are available, with full customization supported for research and industrial prototyping.

Structure & Process

• Film stack: Substrate + Adhesion layer (Ti) + Coating layer (Cu)

• Deposition process: Standard magnetron sputtering (optional: thermal evaporation / electroplating by request)

• Key features: Strong adhesion, low resistance surface, suitable for subsequent lithography, electroplating build-up, or device fabrication.

Specifications (Customizable)

Applications

• Ohmic contacts & electrodes: conductive substrates, contact pads, electrical testing

• Seed layer for electroplating: RDL, microstructures, MEMS electroplating processes

• Nanomaterials & thin-film research: sol–gel substrates, nanomaterial growth and characterization

• Microscopy & probe metrology: SEM, AFM, and other scanning probe microscopy applications

• Bio/chemical platforms: cell culture, protein/DNA microarrays, reflectometry substrates, sensing platforms

Advantages

• Excellent adhesion enabled by Ti interlayer

• High conductivity and uniform Cu surface

• Wide selection of wafer sizes, resistivity ranges, and orientations

• Flexible customization for size, substrate, film stack, and thickness

• Stable, repeatable process using mature sputtering technology

FAQ (Ti/Cu Metal-Coated Silicon Wafers)

Q1: Why is a Ti layer used under the Cu coating?
A: Titanium works as an adhesion (bonding) layer, improving the attachment of copper to the substrate and enhancing interface stability, which helps reduce peeling or delamination during handling and processing.

Q2: What is the typical Ti/Cu thickness configuration?
A: Common combinations include Ti: tens of nm (e.g., 10–50 nm) and Cu: 50–300 nm for sputtered films. Thicker Cu layers (µm-level) are often achieved by electroplating on a sputtered Cu seed layer, depending on your application.

Q3: Can you coat both sides of the wafer?
A: Yes. Single-side or double-side coating is available upon request. Please specify your requirement when ordering.