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SOI Wafer P Type N Type 6 Inch 8 Inch 12 Inch Surface Polish SSP/DSP
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
Payment & Shipping Terms:
| Minimum Order Quantity: | 25 |
|---|---|
| Price: | undetermined |
| Packaging Details: | foamed plastic＋carton |
| Delivery Time: | 2-4weeks |
| Payment Terms: | T/T |
| Supply Ability: | 1000pcs/week |
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Detail Information |
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| Top Silicon Layer Thickness: | 0.1 - 20µm | Buried Oxide Layer Thickness: | 0.1 - 3µm |
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| Substrate Type: | Silicon (Si), High-Resistivity Silicon (HR-Si), Or Other | Device Layer Resistivity: | 1 - 10,000Ω·cm |
| Oxide Layer Resistivity: | 1 × 10⁶ To 10⁸Ω·cm | Thermal Conductivity: | 1.5 - 3.0W/m·K |
| Highlight: | 8 inch SOI wafer,12 inch SOI wafer,6 inch SOI wafer |
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Product Description
SOI wafer P Type N Type 6 inch 8 inch 12 inch Surface polish SSP/DSP
Abstract of SOI wafer
Silicon on Insulator (SOI) is an advanced semiconductor technology where a thin insulating layer, typically silicon dioxide (SiO₂), is inserted between the silicon substrate and the active silicon layer. This structure significantly reduces parasitic capacitance, improves switching speed, lowers power consumption, and enhances radiation resistance compared to traditional bulk silicon technology.
SOI stands for silicon-on-insulator, or Silicon On a substrate, which introduces a layer of buried oxide between the top layer of silicon and the underlying substrate.
SOI specification
| Thermal Conductivity | Relatively high thermal conductivity |
| Active Layer Thickness | Typically ranges from a few to several tens of nanometers (nm) |
| Wafer Diameter | 6 inches, 8 inches, 12 inches |
| Process Advantages | Higher device performance and lower power consumption |
| Performance Advantages | Excellent electrical properties, reduced device size, minimized crosstalk between electronic components |
| Resistivity | Typically ranges from several hundred to thousands of ohm-cm |
| Power Consumption Characteristics | Low power consumption |
| Impurity Concentration | Low impurity concentration |
| Silicon Support on Insulator Wafer | SOI Silicon Wafer 4-inch, CMOS Three-Layer Structure |
Structure of SOI
SOI wafers typically consist of three main layers:
1.Top Silicon Layer (Device Layer): The thin silicon layer where semiconductor devices are fabricated. The thickness varies from a few nanometers to tens of micrometers depending on the application.
2.Buried Oxide (BOX) Layer: A thin layer of silicon dioxide (SiO₂) that provides electrical insulation. It ranges in thickness from tens of nanometers to a few micrometers.
3.Handle Wafer (Substrate): A mechanical support layer, usually made of bulk silicon or other high-performance materials.
The thickness of both the top silicon and buried oxide layers can be customized to optimize performance for specific applications.
SOI Manufacturing Processes
SOI wafers are produced using three primary methods:
1.SIMOX (Separation by IMplanted OXygen)
Involves implanting oxygen ions into a silicon wafer and oxidizing them at high temperatures to form a buried oxide layer.
Produces high-quality SOI wafers but is relatively expensive.
2.Smart Cut™ (Developed by Soitec, France)
Uses hydrogen ion implantation and wafer bonding to create SOI structures.
The most widely used method in commercial SOI production.
3.Wafer Bonding & Etch-Back
Involves bonding two silicon wafers and selectively etching one to the desired thickness.
Used for thick SOI and specialized applications.
Applications of SOI
Due to its unique performance benefits, SOI technology is widely adopted in various industries:
1.High-Performance Computing (HPC)
Companies like IBM and AMD use SOI in high-end server CPUs to boost processing speeds and reduce power consumption.
SOI is widely used in supercomputers and AI processors.
2.Mobile & Low-Power Devices
FD-SOI technology is used in smartphones, wearables, and IoT devices to balance performance and power efficiency.
Chipmakers like STMicroelectronics and GlobalFoundries produce FD-SOI chips for low-power applications.
3.RF & Wireless Communication (RF SOI)
RF SOI is widely adopted in 5G, Wi-Fi 6E, and millimeter-wave communication.
Used in RF switches, low-noise amplifiers (LNA), and RF front-end modules (RF FEM).
4.Automotive Electronics
Power SOI is extensively used in electric vehicles (EVs) and advanced driver assistance systems (ADAS).
It enables high-temperature and high-voltage operation, ensuring reliability in harsh conditions.
5.Silicon Photonics & Optical Applications
SOI substrates are used in silicon photonics chips for high-speed optical communication.
Applications include data centers, high-speed optical interconnects, and LiDAR (Light Detection and Ranging).
Advantages of SOI wafer
1.Reduced parasitic capacitance and increased operating speed – Compared to bulk silicon materials, SOI devices achieve a speed improvement of 20-35%.
2.Lower power consumption – Due to reduced parasitic capacitance and minimized leakage current, SOI devices can lower power consumption by 35-70%.
3.Elimination of latch-up effects – SOI technology prevents latch-up, improving device reliability.
4.Suppression of substrate noise and reduced soft errors – SOI effectively mitigates pulse current interference from the substrate, decreasing the occurrence of soft errors.
5.Compatibility with existing silicon processes – SOI technology integrates well with conventional silicon fabrication, reducing processing steps by 13-20%.
Tag:# SOI wafer # P Type # N Type # 6 inch # 8 inch #12 inch # Surface polish SSP/DSP