• Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished
  • Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished
  • Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished
  • Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished
  • Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished
Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished

Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: Si Wafer

Payment & Shipping Terms:

Delivery Time: 2-4weeks
Payment Terms: T/T
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Detail Information

Diameter: 8 Inches (200 Mm) Crystal Orientation: 111
Thickness: 675 µm To 775 µm Resistivity: 1-1000 Ω·cm
Doping Type: P-Type /N-Type RMS: <1 Nm
TTV: <20 µm Thermal Conductivity: Around 150 W/(m·K)
Oxygen Concentration: <10 Ppm
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8-Inch Si Wafer

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Double Side Polished Si Wafer

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Single Side Polished Si Wafer

Product Description

8inch Si Wafer Si Substrate 111 Polishing P Type N Type Semiconductor for Micro-electromechanical systems (MEMS) Or Power semiconductor devices Or Optical components and sensors

 

8-Inch Silicon Wafer with (111) Crystal Orientation – Introduction

 

The 8-inch silicon wafer with (111) crystal orientation is a vital component in the semiconductor industry, widely used in advanced applications such as power electronics, microelectromechanical systems (MEMS), photonics, and solar cells. This wafer is manufactured from high-purity silicon, and its unique (111) crystal orientation provides specific electrical, mechanical, and thermal properties that are essential for particular semiconductor processes and device designs.

What is a Silicon Wafer?

A silicon wafer is a thin, flat disc made from high-purity silicon crystals. It serves as the base substrate for the production of integrated circuits (ICs) and other semiconductor devices. The wafer undergoes various processing steps such as oxidation, photolithography, etching, and doping to create intricate circuits that are used in a wide range of electronic devices.

Crystal Orientation and Its Importance

The crystal orientation of a silicon wafer refers to the arrangement of the silicon atoms in the crystal lattice. It is typically represented by Miller indices, such as (100), (110), and (111). The (111) orientation in silicon wafers means that the atoms are aligned in a particular direction within the crystal structure. This orientation significantly affects the wafer's physical properties, such as surface energy, etching characteristics, and carrier mobility, which are crucial for optimizing device performance.

Advantages of (111) Crystal Orientation:

  1. Enhanced Electrical Properties: The (111) orientation typically offers better thermal conductivity and electrical performance, especially in power semiconductor devices.
  2. Optimized for Power Devices: The (111) wafer orientation is preferred in power semiconductor devices due to its high breakdown voltage, excellent thermal dissipation, and stability under high voltages.
  3. Improved Thermal Management: The (111) crystal provides better heat conduction, which is essential for high-power applications such as transistors and diodes.
  4. Better Surface Morphology: The (111) surface tends to exhibit smoother surfaces, which is ideal for certain microfabrication processes and MEMS devices.

Specifications of the 8-Inch (111) Silicon Wafer

  1. Diameter: The 8-inch (200 mm) silicon wafer is a standard size used in semiconductor fabrication. Its size allows for the creation of multiple chips from a single wafer, making it cost-effective for mass production.
  2. Thickness: The typical thickness of an 8-inch (111) silicon wafer is around 675-775 microns (µm), although the thickness can vary depending on specific customer requirements.
  3. Resistivity: The resistivity of the wafer is crucial for determining its electrical characteristics. The resistivity typically ranges from 1 Ω·cm to 1000 Ω·cm, with N-type and P-type doping affecting this value. The resistivity can be tailored to meet the demands of various applications, such as power electronics or photovoltaic cells.
  4. Doping Type: Silicon wafers can be doped with either P-type or N-type impurities, such as boron (P-type) or phosphorus (N-type), to control their electrical conductivity. N-type wafers are often preferred for high-efficiency applications like photovoltaic cells due to their enhanced electron mobility.
  5. Surface Quality: The surface of the wafer is polished to an extremely smooth finish, with a roughness (RMS) of less than 1 nm. This ensures that the wafer is suitable for the precise processing required in semiconductor manufacturing. Total Thickness Variation (TTV) is typically below 20 µm, ensuring uniformity across the wafer.
  6. Flat or Notch: To facilitate orientation during device processing, the wafer is typically marked with a flat or notch on its edge, indicating the crystal orientation of (111). This helps in aligning the wafer during the photolithography and etching stages.

Applications of 8-Inch (111) Silicon Wafers

  1. Power Semiconductor Devices: The 8-inch (111) silicon wafer is extensively used in power devices such as diodes, transistors, and power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). These devices are essential for handling high voltages and currents in applications like electric vehicles (EVs), renewable energy systems (such as solar and wind power), and electric grids.

  2. Microelectromechanical Systems (MEMS): MEMS devices, which combine mechanical and electrical components on a single chip, benefit from the (111) orientation due to its mechanical strength, precision, and surface properties. MEMS devices are used in various applications such as sensors, actuators, accelerometers, and gyroscopes found in automotive, medical, and consumer electronics.

  3. Photovoltaic (Solar) Cells: The (111) orientation can enhance the performance of silicon-based solar cells. The wafer's superior electron mobility and efficient light absorption properties make it suitable for high-efficiency solar panels, where the aim is to convert as much sunlight into electrical energy as possible.

  4. Optoelectronic Devices: The (111) silicon wafer is also used in optoelectronic devices, including light sensors, photodetectors, and lasers. Its high-quality crystal structure and surface properties support the high precision required in these applications.

  5. High-Performance ICs: Some high-performance integrated circuits (ICs), including those used in RF (radio-frequency) applications and sensors, use (111) oriented silicon wafers to take advantage of their unique physical properties.

Application picture of Si wafer

Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished 0Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished 1

Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished 2   Si Wafer / Substrate 8-Inch Thickness 675-775 Μm, P/N Type , Orientation 111, Double / Single Side Polished 3

Manufacturing Process

The manufacturing process for an 8-inch (111) silicon wafer typically involves several key steps:

  1. Crystal Growth: High-purity silicon is melted and grown into large single crystals using methods like the Czochralski process.
  2. Wafer Cutting: The silicon crystal is sliced into thin, flat discs of the required diameter.
  3. Polishing and Cleaning: The wafer is polished to a smooth, mirror-like finish to remove surface defects and contamination.
  4. Inspection and Quality Control: Wafers are rigorously inspected for defects, thickness variation, and crystal orientation using advanced metrology equipment.

Conclusion

The 8-inch (111) silicon wafer is a highly specialized material that plays a crucial role in various advanced technologies. Its crystal structure offers unique advantages in terms of electrical, thermal, and mechanical properties, making it ideal for high-power semiconductor devices, MEMS, photovoltaics, and optoelectronics. By offering customizable parameters such as resistivity, thickness, and doping type, this wafer can be tailored to meet the specific needs of different applications, contributing to the advancement of modern electronics and energy solutions.

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