• Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished
  • Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished
  • Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished
  • Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished
  • Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished
Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished

Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished

Product Details:

Place of Origin: China
Brand Name: ZMSH
Model Number: Si Wafer

Payment & Shipping Terms:

Delivery Time: 2-4weeks
Payment Terms: T/T
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Detail Information

Polish: Double/Single Side Polish Orientation: <111>
Thickness: 675 µm To 775 µm RMS: <1nm
TTV: <20um Thermal Conductivity: Around 150 W/(m·K)
Oxygen Concentration: <10 Ppm
Highlight:

8inch Si wafer

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Double Side Polished Si wafer

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Single Side Polished Si wafer

Product Description

8inch Si Wafer Si Substrate 111 P Type N Type for Micro-electromechanical systems (MEMS) Or Power semiconductor devices Or Optical components and sensors

 

Product Description: The 8-inch silicon wafer with (111) crystal orientation is a high-quality, single-crystal material widely used in semiconductor manufacturing. The (111) crystal orientation provides specific electrical and mechanical properties that are beneficial for various high-performance applications.

Key Features:

  • Diameter: 8 inches (200 mm).
  • Crystal Orientation: (111), offering unique surface properties, ideal for certain semiconductor processes and device characteristics.
  • High Purity: Manufactured with a high level of purity to ensure uniformity and low defect rates, critical for semiconductor and microelectronics applications.
  • Surface Quality: Typically polished or cleaned to meet stringent surface requirements for device manufacturing.

Applications:

  • Power Semiconductor Devices: The (111) orientation is preferred in certain power devices due to its high breakdown voltage and favorable thermal properties.
  • MEMS (Microelectromechanical Systems): Often used for sensors, actuators, and other micro-scale devices, thanks to its well-defined crystal structure.
  • Optoelectronic Devices: Suitable for applications in light-emitting devices and photodetectors, where high crystal quality is important.
  • Solar Cells: (111)-oriented silicon is also used in high-efficiency photovoltaic cells, benefiting from enhanced light absorption and carrier mobility.

Application picture of Si Wafer:

Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished 0Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished 1

Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished 2    Si Wafer 8inch Tickness 675 Μm To 775 ΜmP Type N Type 111 Double Side Polished / Single Side Polished 3

Customizations:

  • Thickness and Resistivity: These can be tailored according to customer specifications to meet specific application requirements.
  • Doping Type: P-type or N-type doping is available to adjust the wafer’s electrical characteristics.

This silicon wafer type is crucial for a wide range of semiconductor applications, providing a balance of mechanical strength, electrical performance, and ease of processing.

 

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